VCE IC = = 1200 V 75 A IGBT Module LoPak3 SPT 5SNS 0075W120100 * * * * * Doc. No. 5SYA1520-01 May 02 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package UL File no. E63532 Maximum Rated Values (Tvj = 25C, unless specified otherwise) Parameter Symbol Collector-Emitter Voltage VCES DC Collector Current Peak Collector Current Values Unit VGE shorted 1200 V IC Ths = 70C 75 A ICM Pulse: tp=1ms, Ths = 70C 150 A 20 V 340 W 75 A 150 A Gate Emitter Voltage VGES Total Power Dissipation Ptot IGBT Switching SOA SwSOA IGBT Short Circuit SOA SCSOA DC Forward Current IF Peak Forward Current IFM Conditions Ths = 25C per switch IC = 150 A, VCEM = 1200 V, VCC 9 VGE = 15 V, Tvj =125C voltages measured on auxiliary terminals VCC = 900 V, VCEM = 1200 V, tp = 10 s, VGE = 15 V, Tvj =125 C Pulse: tp = 1ms, Ths = 70C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNS 0075W120100 Maximum Rated Values (cont.) Parameter (Tvj = 25C, unless specified otherwise) Symbol Conditions Values Unit Junction Temperature Tvj - 40 ~ 150 C Storage Temperature Ttstg/Tcop - 40 ~ 125 C 2500 V 3~6 Nm Isolation Voltage Mounting Viso 1 min, f = 50Hz Base to Heatsink (M5) Hole 5.5mm diameter Main Terminals Pin: 1.15*1.0 mm PCB mounting Pitch of pins : 3.81 mm Gate, Emitter Aux. Pin: 1.15*1.0 mm IGBT Characteristic Values Parameter Collector-Emitter Saturation Voltage Symbol (Tvj = 25C, unless specified otherwise) Conditions VCE(sat)* IC = 75 A, VGE = 15 V min. typ. Tvj = 25 C 2.00 Tvj = 125 C 2.20 max. Unit 2.35 V V Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 V, Tvj = 125 C 6 mA Gate-Emitter leakage Current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C 500 nA 6.5 V Gate-Emitter Threshold Voltage VGE(TO) IC = 3 mA, VCE = VGE Total Gate Charge Qge Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) tf Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Module stray Inductance Plus to Minus Ls DC Resistance terminal-chip RCC'+EE' 4.5 IC = 75 A, VCE = 600 V, VGE = -15 to 15 V 750 nC 6.5 nF 1.6 nF 1.4 nF 0.1 s 0.05 s IC = 75 A, VCC = 600 V, Rgoff = 15 , Tvj = 125 C,VGE = 15 V 0.50 s 0.09 s Rgon = 15 IC = 75 A, Tvj = 125 C, VCC = 600 V, VGE = 15 V, inductive load, integrated up Rgoff = 15 to: 3% VCE (Eon), 1% IC (Eoff) 8.5 mJ 7.0 mJ VCE = 25 V, VGE = 0 V, f = 1MHz IC = 75 A, VCC = 600 V, Rgon = 15 , Tvj = 125 C, VGE = 15 V 25 Ths = 25 C Ths = 125 C 1.25 1.90 nH m * Note 1: Collector emitter saturation voltage is given at die level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1520-01 May 02 page 2 of 8 5SNS 0075W120100 Diode Characteristic Values Parameter (Tvj = 25C, unless specified otherwise) Symbol Forward Voltage VF* Reverse Recovery Current Irrm Reverse Recovery Charge Qrr Reverse Recovery Time trr Conditions IF = 75 A min. typ. max. Tvj = 25 C 2.00 2.40 Tvj = 125 C 2.00 IF = 75 A, Rgon = 15 , VCC = 600 V, VGE = 15 V, Tvj = 125 C IF = 75 A, Tvj = 125 C, VCC = 600V, Reverse Recovery Energy Erec Rgon = 15 , VGE = 15 V, inductive load, fully integrated Ths = 25 C Resistance terminal-chip RCC'+EE' Ths = 125 C * Note 2: Forward voltage is given at die level Thermal Characteristics Parameter Symbol IGBT Thermal Resistance Junction to Heatsink Rth j-h Igbt Diode Thermal Resistance Junction to Heatsink Rth j-h Diode Equivalent IGBT Thermal Resistance Junct. to Case Rth j-c Igbt Equivalent Diode Thermal Resistance Junct. to Case Rth j-c Diode Unit V 75 A 14 C 0.35 s 5.5 mJ 1.25 1.90 m (Tj = 25C, unless specified otherwise) Conditions min. typ. max. Unit 0.370 C/W Heatsink: flatness < +/- 20 m, roughness < 6 m without ridge Thermal grease: thickness: 30 m < t < 50 m 0.740 C/W 0.235 C/W 0.550 C/W Mechanical Properties Parameter Dimensions Symbol Conditions L* W* H Typical , see outline drawing Clearance Distance DC acc. IEC 664-1 and Term. to base: prEN50124-1:1995 Term. to term: Surface Creepage Distance DSC acc. IEC 664-1 and Term. to base: prEN50124-1:1995 Term. to term: min. typ. max. Unit 121.5 * 61.5 * 20.5 mm 8.5 mm 9.5 mm 12.5 mm 15.5 mm Weight 215 gr ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1520-01 May 02 page 3 of 8 5SNS 0075W120100 Electrical configuration Outline drawing ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1520-01 May 02 page 4 of 8 5SNS 0075W120100 Fig. 1 Typ. Output Characteristics at Tvj=25C Fig. 2 Typ. Output Characteristics at Tvj=125C Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1520-01 May 02 page 5 of 8 5SNS 0075W120100 Fig. 5 Typ. Switching Energies per pulse vs on-state current Fig. 6 Typ. Switching Energies per pulse vs gate resistor Fig. 7 Typ. Switching times vs on-state current Fig. 8 Typ. Switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1520-01 May 02 page 6 of 8 5SNS 0075W120100 Fig. 9 Fig. 11 Typ. Capacitances vs collector-emitter Voltage Typ. Reverse Recovery Characteristics vs forward current Fig. 10 Typ. Diode forward Characteristics Fig. 12 Typ. Reverse Recovery Characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1520-01 May 02 page 7 of 8 5SNS 0075W120100 Fig. 13 Typ. Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1520-01 May 02