ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1200 V
IC=75A
Doc. No. 5SYA1520-01 May 02
•
Low-loss, rugged IGBT SPT
chip-set
•
EMC friendly diode with positive
temp. coefficient of on-state
•
Low profile compact baseless
package
•
Industry standard package
•
UL File no. E63532
Maximum Rated Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Collector-Emitter Voltage VCES VGE shorted 1200 V
DC Collector Current ICThs = 70°C 75 A
Peak Collector Current ICM Pulse: tp=1ms, Ths = 70°C 150 A
Gate Emitter Voltage VGES ±20 V
Total Power Dissipation Ptot Ths = 25°C per switch 340 W
IGBT Switching SOA SwSOA IC = 150 A, VCEM = 1200 V, VCC 9
VGE = ±15 V, Tvj =125°C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA SCSOA VCC = 900 V, VCEM = 1200 V, tp = 10 µs,
VGE = ±15 V, Tvj =125 °C
DC Forward Current IF75 A
Peak Forward Current IFM Pulse: tp = 1ms, Ths = 70°C 150 A
IGBT Module LoPak3 SPT
5SNS 0075W120100
5SNS 0075W120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1520-01 May 02 page 2 of 8
Maximum Rated Values (cont.) (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Junction Temperature Tvj - 40 ~ 150 °C
Storage Temperature Ttstg/Tcop - 40 ~ 125 °C
Isolation Voltage Viso 1 m i n , f = 5 0 H z 2500 V
Base to Heatsink (M5) Hole 5.5mm diameter 3 ~ 6 Nm
Main Terminals Pin: 1.15*1.0 mm
PCB mounting Pitch of pins : 3.81 mm
Mounting
Gate, Emitter Aux. Pin: 1.15*1.0 mm
IGBT Characteristic Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tvj = 25 °C 2.00 2.35 V
Collector-Emitter
Saturation Voltage VCE(sat)*I
C = 75 A, VGE = 15 V Tvj = 125 °C2.20 V
Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 V, Tvj = 125 °C6mA
Gate-Emitter leakage
Current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C±500 nA
Gate-Emitter Threshold
Voltage VGE(TO) IC = 3 mA, VCE = VGE 4.5 6.5 V
Total Gate Charge Qge IC = 75 A, VCE = 600 V, VGE = -15 to 15 V 750 nC
Input Capacitance Cies 6.5 nF
Output Capacitance Coes 1.6 nF
Reverse Transfer
Capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1MHz
1.4 nF
Turn-On Delay Time td(on) 0.1 µs
Rise Time tr
IC = 75 A, VCC = 600 V, Rgon = 15 Ω,
Tvj = 125 °C, VGE = ±15 V 0.05 µs
Turn-Off Delay Time td(off) 0.50 µs
Fall Time tf
IC = 75 A, VCC = 600 V, Rgoff = 15 Ω,
Tvj = 125 °C,VGE = ±15 V 0.09 µs
Turn-on Switching Energy Eon Rgon = 15 Ω8.5 mJ
Turn-off Switching Energy Eoff Rgoff = 15 Ω
IC = 75 A, Tvj = 125 °C,
VCC = 600 V, VGE = ±15 V,
inductive load, integrated up
to: 3% VCE (Eon), 1% IC (Eoff)7.0 mJ
Module stray Inductance
Plus to Minus Ls DC 25 nH
Ths = 25 °C1.25
Resistance terminal-chip RCC’+EE’Ths = 125 °C1.90 m
* Note 1: Collector emitter saturation voltage is given at die level.
5SNS 0075W120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1520-01 May 02 page 3 of 8
Diode Characteristic Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tvj = 25 °C 2.00 2.40
Forward Voltage VF*I
F = 75 A Tvj = 125 °C2.00 V
Reverse Recovery Current Irrm 75 A
Reverse Recovery Charge Qrr 14 µC
Reverse Recovery Time trr
IF = 75 A, Rgon = 15 Ω, VCC = 600 V,
VGE = ±15 V, Tvj = 125 °C0.35 µs
Reverse Recovery Energy Erec
IF = 75 A, Tvj = 125 °C, VCC = 600V,
Rgon = 15 Ω, VGE = ±15 V,
inductive load, fully integrated 5.5 mJ
Ths = 25 °C1.25
Resistance terminal-chip RCC’+EE’Ths = 125 °C1.90m
* Note 2: Forward voltage is given at die level
Thermal Characteristics (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
IGBT Thermal Resistance
Junction to Heatsink Rth j-h
Igbt 0.370 °C/W
Diode Thermal Resista nce
Junction to Heatsink Rth j-h
Diode 0.740 °C/W
Equivalent IGBT T hermal
Resistance Junct. to Case Rth j-c
Igbt 0.235 °C/W
Equivalent Diod e Thermal
Resistance Junct. to Case Rth j-c
Diode
Heatsink:
flatness < +/- 20 µm,
roughness < 6 µm without ridge
Thermal grease:
thickness: 30 µm < t < 50 µm 0.550 °C/W
Mechanical Properties
Parameter Symbol Conditions min. typ. max. Unit
Dimensions L* W* H Typical , see outline drawing 121.5 * 61.5 * 20.5 mm
Term. to base: 8.5 mm
Clearance Distance DCacc. IEC 664-1 and
prEN50124-1:1995 Term. to term: 9.5 mm
Term. to base: 12.5 mm
Surface Creepage
Distance DSC acc. IEC 664-1 and
prEN50124-1:1995 Term. to term: 15.5 mm
Weight 215 gr
5SNS 0075W120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1520-01 May 02 page 4 of 8
Electrical configuration
Outline drawing
5SNS 0075W120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1520-01 May 02 page 5 of 8
Fig. 1 Typ. Output Characteristics
at Tvj=25°CFig. 2 Typ. Output Characteristics
at Tvj=125°C
Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristics
5SNS 0075W120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1520-01 May 02 page 6 of 8
Fig. 5 Typ. Switching Energies per pulse vs
on-state current Fig. 6 Typ. Switching Energies per pulse vs
gate resistor
Fig. 7 Typ. Switching times vs on-state
current Fig. 8 Typ. Switching times vs gate resistor
5SNS 0075W120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1520-01 May 02 page 7 of 8
Fig. 9 Typ. Capacitances vs collector-emitter
Voltage Fig. 10 Typ. Diode forward Characteristics
Fig. 11 Typ. Reverse Recovery
Characteristics vs forward current Fig. 12 Typ. Reverse Recovery Characteristics
vs gate resistor
5SNS 0075W120100
Fig. 13 Typ. Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB S witzerlan d Ltd Doc. No. 5SYA1520-01 May 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone+41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
