PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 - 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. -25 35 -30 30 -40 25 IMD Low 20 -45 15 -50 10 ACPR -55 5 Efficiency -60 Drain Efficiency (%) IMD & ACPR (dBc) VDD = 30 V, IDQ = 2.6A, = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz IMD Up 0 36 38 40 42 44 46 48 50 PTFB183404F Package H-37275-6/2 Features Two-carrier WCDMA 3GPP Drive-up -35 PTFB183404E Package H-36275-8 52 Average Output Power (dBm) * Broadband internal input and output matching * Wide video bandwidth * Typical single-carrier WCDMA performance, 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz = -37 dBc * Increased negative gate-source voltage range for improved performance in Doherty amplifiers * Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power * Integrated ESD protection * Excellent thermal stability * Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, 1 = 1870 MHz, 2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 -- dB Drain Efficiency hD 24 25.5 -- % Intermodulation Distortion IMD -- -35 -32 dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution RF Characteristics (cont.) Single-carrier WCDMA Performance (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Conditions Symbol 1805 MHz 1842 MHz 1880 MHz (Typ) (Typ) (Typ) 17.1 17.3 17.5 17.0 17.15 17.4 25 24.5 24 Gain POUT (AVG) = 49 dBm Gps POUT (AVG) = 51 dBm Drain Efficiency POUT (AVG) = 49 dBm POUT (AVG) = 51 dBm 31 30 30 Output PAR at 0.01% POUT (AVG) = 49 dBm 6.5 6.5 6.5 POUT (AVG) = 51 dBm 5.5 5.5 5.5 Adjacent Channel Power Ratio POUT (AVG) = 49 dBm -43 -42.5 -41 POUT (AVG) = 51 dBm -36 -35 -34 hD dB ACPR Two-tone Specifications (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, = 1880 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 17.5 -- dB Drain Efficiency hD -- 35 -- % Intermodulation Distortion IMD -- 30 -- dBc Symbol Min Typ Max Unit V(BR)DSS 65 -- -- V DC Characteristics Characteristic Conditions Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.05 -- W Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Data Sheet 2 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 340 W CW) RqJC 0.2 C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB183404E V1 H-36275-8 Ceramic open-cavity, slotted push-pull Tray PTFB183404E V1 R250 H-36275-8 Ceramic open-cavity, slotted push-pull Tape & Reel, 250 pcs PTFB183404F V2 H-37275-6/2 Ceramic open-cavity, earless push-pull Tray PTFB183404F V2 R250 H-37275-6/2 Ceramic open-cavity, earless push-pull Tape & Reel, 250 pcs Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84MHz VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 1880 Lower -30 1842.5 Lower 40 18 30 1805 Lower Gain (dB) 1805 Upper -40 -45 Gain 17 20 16 10 -50 Drain Efficiency (%) 1842.5 Upper -35 IMD (dBc) 19 1880 Upper Efficiency 15 -55 36 38 40 42 44 46 48 50 38 40 42 44 46 48 50 52 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 0 36 52 3 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz -10 Efficiency 30 -20 -30 IMD3 Gain 20 -40 10 -50 1730 1767.5 1805 1842.5 1880 1917.5 -25 40 -30 35 -35 30 -40 20 -50 15 -55 10 -60 -65 1955 0 39 41 43 45 47 49 51 53 55 Output Power, PEP (dBm) Two-tone Drive-up (over temp) Two-tone Drive-up (PO UT -max 3rd order IMD @ -30dBc) VDD = 30 V, IDQ = 2.6 A, 1 = 1842.5 MHz, 2 = 1841.5 MHz VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz 17 16 19 40 18 30 17 20 Efficiency 15 10 Gain (dB) Gain 50 Efficiency (%) 19 Gain (dB) 5 Efficiency Frequency (MHz) 18 25 IMD3 -45 50 40 Gain 30 16 Efficiency 15 20 +85C +25C Efficiency (%) 40 IMD (dBc) Gain (dB) / Efficiency (%) RL 50 Return Loss (dB), IMD (dBc) 0 60 Efficiency (%) VDD = 30 V, IDQ = 2.6 A, PO UT = 170 W 10 -30C 14 0 40 42 44 46 48 50 52 54 14 56 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 0 39 4 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.6 A, 1 = 1880 MHz, 2 = 1879 MHz VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz -20 -20 1842.5MHz -30 3rd Order -30 1805MHz IMD (dBc) -40 -50 -40 5th -50 7th -60 -70 -60 39 41 43 45 47 49 51 53 55 39 57 41 Intermodulation Distortion vs. Tone Spacing IMD Lower IMD Upper ACP (dBc) IMD (dBc) -30 IMD3 -40 IMD5 -50 -55 1 55 57 -30 30 Efficiency 25 -40 20 -45 15 -50 10 ACP Low ACP Up 5 -60 10 100 0 36 Two Tone Spacing (MHz) Data Sheet 53 35 -55 IMD7 -60 51 -25 -35 -25 -45 49 VDD = 30 V, IDQ = 2.6 A, = 1880 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz -10 -35 47 Single-carrier Drive-up, 1880 MHz = 1842.5 MHz, PO UT = 330 W (PEP), VDD = 30 V, IDQ = 2.6 A -20 45 Output Power, PEP (dBm) Output Power, PEP (dBm) -15 43 Drain Efficiency (%) IMD 3rd Order (dBc) 1880MHz 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) 5 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier Drive-up, 1880 MHz Single-carrier Broadband Performance V DD = 30 V, IDQ = 2.6 A, = 1880 MHz, 0 30 20 -5 -10 RL Gain 20 -15 15 -20 10 -25 PARC 5 -30 0 -35 ACP -5 1693 1768 -40 1843 1918 16 12 0 PARC @ .01% CCDF 8 4 -60 36 38 20 48 50 52 54 20 12 0 PARC @ .01% CCDF -20 -40 ACP 0 PARC & PARC Gain (dB) 20 Efficiency (%) / ACP(dBc) PARC & PARC Gain (dB) 46 40 Gain Efficiency 40 42 44 46 48 50 52 16 20 Efficiency 0 12 PARC @ .01% CCDF 8 4 -20 -40 ACP 0 -60 -60 36 54 38 40 42 44 46 48 50 52 54 Average Output Power (dBm) Average Output Power (dBm) Data Sheet 44 VDD = 30 V, IDQ = 2.6 A, = 1805 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 40 38 42 Single-carrier Drive-up, 1805 MHz Gain 36 40 Average Output Power (dBm) VDD = 30 V, IDQ = 2.6 A, = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz 4 -40 0 1993 Single-carrier Drive-up, 1842 MHz 8 -20 ACP Frequency (MHz) 16 20 Efficiency Efficiency (%) / ACP(dBc) 25 40 Gain Efficiency (%) / ACP (dBc) Efficiency PARC & PARC Gain (dB) 35 3GPP WCDMA signal, PAR = 7.5:1, BW = 3.84 MHz Return Loss (dB) / ACP (dBc) Gain & PARC (dB) / Efficiency (%) VDD = 30 V, IDQ = 2.6 A, PO UT = 125 W 6 of 18 Rev. 04, 2010-11-17 0.7 0. 6 45 0. 0 0. Confidential, Limited Internal Distribution 0. 0. 5 4 Nornalized to 50 Ohms PTFB183404E PTFB183404F 0. ptfb183404f-v1 5 db183404f-v1 Aug. 27, 2010 12:45:00 PM 3 RD G E NE RA T O jX R jX 1730 1.86 -4.25 0.55 -2.78 1768 1.77 -4.06 0.54 -2.66 1805 1.68 -3.88 0.53 -7.54 1843 1.61 -3.70 0.52 -2.43 1880 1.56 -3.53 0.51 -2.32 1918 1.51 -3.37 0.51 -2.21 1955 1.47 -3.22 0.5 -2.11 0.5 0.4 0.3 1730 MHz 0.1 0. 2 0. 3 0. 4 0.7 0. 6 0. 5 0. 45 0 0. 5 See next page for reference circuit information 1955 MHz <--- R Z Source L MHz 1730 MHz 1955 MHz 0.2 0.1 Z Load Z Load W E W AV Z Source W Frequency 0.0 D D LOA D S T OW AR E NGTH - W AV E LE NGT H S T OW A S G G Z0 = 50 0 .1 D Z Load 0. 2 Z Source R --> Broadband Circuit Impedance (combined leads) 0.10 0 .40 Data Sheet 7 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit VDD S3 8 C801 1000 pF 4 R802 1200 Ohm TL151 TL160 TL101 2 3 2 Out 3 NC 6 1 7 C803 1000 pF 5 E R804 10 Ohm C802 1000 pF S2 R801 10 Ohm S1 3 R805 10 Ohm R102 10 Ohm TL167 TL138 3 1 1 TL136 TL120 2 3 TL137 TL158 C102 100000 pF TL159 TL163 S B R803 1300 Ohm NC C 4 1 TL141 TL142 2 In 2 TL130 C111 10 pF 3 1 R103 10 Ohm TL102 TL143 C110 4700000 pF TL103 2 TL135 3 1 C109 10 pF TL104 TL118 TL105 TL155 TL156 TL147 TL109 TL146 1 TL114 C104 10 pF TL113 TL145 TL111 TL152 TL110 TL161 1 C106 1.7 pF 1 2 C108 10 pF TL112 TL115 C103 0.7 pF TL162 2 TL157 3 GATE DUT 1 TL122 3 2 3 TL172 2 3 TL116 RF IN TL171 C107 1.7 pF TL123 TL153 TL149 TL154 TL124 TL148 TL117 TL170 TL169 2 TL108 3 TL165 1 1 TL107 2 GATE DUT 3 TL125 TL164 2 TL126 C101 4700000 pF TL139 C105 100000 pF TL134 3 1 R104 10 Ohm TL127 TL168 2 3 1 TL128 TL132 TL140 TL129 TL144 C112 10 pF R101 10 Ohm 2 TL131 TL166 TL119 TL133 3 2 3 1 b183404 f_ b din_ 07- 28-2010 1 e TL106 r=3.48 H=20 mil RO/RO4350B1 TL150 TL121 Reference circuit input schematic for = 1880 MHz Data Sheet 8 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit (cont.) C 202 10000000 pF TL224 TL233 2 TL228 TL227 TL221 1 3 2 3 1 C203 10000000 pF TL203 TL204 VDD C214 1000000 pF 1 3 2 TL205 TL234 C205 2200000 pF 1 3 2 C212 1.3 pF TL229 VDD TL209 TL210 TL207 DRAIN DUT C210 1.3 pF TL206 TL202 2 TL218 3 TL235 C 206 2200000 pF TL201 2 3 1 TL211 C216 10 pF TL216 TL212 TL237 1 TL208 TL213 TL240 C211 1.3 pF C209 1.8 pF TL215 RF OUT 2 3 4 4 C213 1.3 pF C208 0.4 pF 3 2 C215 1000000 pF 1 3 2 C204 10000000 pF TL236 TL223 3 1 TL230 TL222 TL219 TL238 2 1 4 TL232 TL239 TL214 TL217 1 VDD C201 1.4 pF TL231 1 3 TL226 TL220 2 e TL225 3 1 b 183404 f_ b dout _07 -28-2010 2 VDD C207 1000000 pF r=3.48 H=20 mil RO/RO4350B1 Reference circuit output schematic for = 1880 MHz Data Sheet 9 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFB183404E or PTFB183404F PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101, TL129 0.017 , 54.17 W = 1.016, L = 1.651 W = 40, L = 65 TL102 0.002 , 63.89 W = 0.762, L = 0.203 W = 30, L = 8 TL103, TL139 0.000 , 41.75 W = 1.524, L = 0.025 W = 60, L = 1 TL104 0.208 , 63.89 W = 0.762, L = 20.297 W = 30, L = 799 TL105 0.008 , 28.85 W = 2.540, L = 0.762 W = 100, L = 30 TL106 0.005 , 63.89 W = 0.762, L = 0.508 W = 30, L = 20 TL107, TL157 0.061 , 8.03 W = 11.430, L = 5.359 W = 450, L = 211 TL108, TL172 0.004 , 8.03 W = 11.430, L = 0.338 W = 450, L = 13 TL109, TL170 0.002 , 8.03 W = 11.430, L = 0.196 W = 450, L = 8 TL110 0.022 , 32.60 W = 2.159, L = 2.032 W = 85, L = 80 TL111 0.028 , 49.69 W = 1.168, L = 2.710 W = 46, L = 107 TL112 0.000 , 63.89 W = 0.762, L = 0.025 W = 30, L = 1 TL113 0.016 , 49.69 W = 1.168, L = 1.549 W = 46, L = 61 TL114 0.029 , 49.69 W = 1.168, L = 2.743 W = 46, L = 108 TL115, TL116, TL117, TL118 W = 2.540 W = 100 TL119, TL120 W = 1.016 W = 40 TL121, TL141 0.013 , 34.08 W = 2.032, L = 1.270 W = 80, L = 50 TL122, TL123 0.000 , 63.89 W = 0.762, L = 0.000 W = 30, L = 0 TL124, TL156 0.014 , 17.20 W = 4.826, L = 1.270 W = 190, L = 50 TL125 0.013 , 63.89 W = 0.762, L = 1.270 W = 30, L = 50 TL126, TL139, TL159 0.000 , 41.75 W = 1.524, L = 0.025 W = 60, L = 1 TL127 0.002 , 63.89 W = 0.762, L = 0.203 W = 30, L = 8 TL128, TL130 0.013 , 54.17 W = 1.016, L = 1.262 W = 40, L = 50 TL131, TL138 0.014 , 54.17 W = 1.016, L = 1.397 W = 40, L = 55 TL132, TL137 0.000 , 34.08 W = 2.032, L = 0.025 W = 80, L = 1 TL133, TL136 0.079 , 54.17 W = 1.016, L = 7.620 W = 40, L = 300 TL134, TL135 0.008 , 54.17 W = 1.016, L = 0.762 W = 40, L = 30 TL140 0.015 , 63.89 W = 0.762, L = 1.422 W = 30, L = 56 TL142, TL144 0.010 , 63.89 W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40 TL143, TL168 0.016 , 63.89 W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 30, W2 = 30, W3 = 60 TL145 0.008 , 49.69 W1 = 1.168, W2 = 1.168, W3 = 0.762 W1 = 46, W2 = 46, W3 = 30 TL146 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = 10 TL147 W1 = 0.005, W2 = 0.011, Offset = 0.003 W1 = 5, W2 = 450, Offset = 130 table continued on page 11 Data Sheet 10 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics TL148 W1 = 0.005, W2 = 0.011, Offset = -0.003 W1 = 5, W2 = 450, Offset = -130 TL149 W1 = 0.003, W2 = 0.005, Offset = 0.000 W1 = 3, W2 = 190, Offset = -10 TL150 W1 = 2.032, W2 = 0.762 W1 = 80, W2 = 30 TL151 W1 = 2.540, W2 = 0.762 W1 = 100, W2 = 30 TL152 Input W1 = 1.168, W2 = 2.159 W1 = 46, W2 = 85 TL153 0.008 , 28.85 W = 2.540, L = 0.762 W = 100, L = 30 TL154, TL155 0.006 , 17.20 W = 4.826, L = 0.508 W = 190, L = 20 TL158 0.015 , 63.89 W = 0.762, L = 1.422 W = 30, L = 56 TL160 0.004 , 63.89 W = 0.762, L = 0.404 W = 30, L = 16 TL161 0.023 , 28.85 W1 = 2.540, W2 = 2.540, W3 = 2.159 W1 = 100, W2 = 100, W3 = 85 TL162, TL165 0.011 , 8.03 W1 = 11.430, W2 = 11.430, W3 = 1.016 W1 = 450, W2 = 450, W3 = 40 TL163, TL164 0.016 , 63.89 W1 = 0.762, W2 = 0.762, W3 = 1.524 W1 = 30, W2 = 30, W3 = 60 TL166, TL167 0.021 , 54.17 W1 = 1.016, W2 = 1.016, W3 = 2.032 W1 = 40, W2 = 40, W3 = 80 TL169, TL171 0.009 , 8.03 W1 = 11.430, W2 = 11.430, W3 = 0.762 W1 = 450, W2 = 450, W3 = 30 See next page for more reference circuit information Data Sheet 11 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Output TL201 (taper) 0.011 l, 12.30 W / 34.72 W W1 = 7.112, W2 = 1.981, L = 1.016 W1 = 280, W2 = 78, L = 40 TL202 (taper) 0.009 l, 5.88 W / 7.95 W W1 = 16.002, W2 = 11.557, L = 0.762 W1 = 630, W2 = 455, L = 30 TL203 0.019 l, 20.93 W W = 3.810, L = 1.778 W = 150, L = 70 TL204 0.019 l, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70 TL205, TL230 0.003 l, 20.93 W W = 3.810, L = 0.254 W = 150, L = 10 TL206 (taper) 0.023 l, 3.67 W / 5.88 W W1 = 26.365, W2 = 16.002, L = 2.032 W1 = 1038, W2 = 630, L = 80 W1 = 25.400, W2 = 26.365 W1 = 1000, W2 = 1038 TL207 TL208, TL209 0.000 l, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL210 0.055 l, 3.67 W W = 26.365, L = 4.801 W = 1038, L = 189 TL211 0.044 l, 34.72 W W = 1.981, L = 4.115 W = 78, L = 162 TL212 0.005 l, 47.12 W W = 1.270, L = 0.432 W = 50, L = 17 W = 0.025, L = 0.025 W = 1, L = 1 TL213, TL214, TL239, TL240 0.000 l, 144.35 W TL215 0.066 l, 47.12 W W = 1.270, L = 6.299 W = 50, L = 248 TL216 0.014 l, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50 TL217 W1 = 16.002, W2 = 0.025, W3 = 16.002 W4 = 0.025 W1 = 630, W2 = 1, W3 = 630, W4 = 1 TL218 W1 = 11.557, W2 = 0.025, W3 = 11.557 W4 = 0.025 W1 = 455, W2 = 1, W3 = 455, W4 = 1 TL219 W1 = 7.112, W2 = 0.025, W3 = 7.112 W4 = 0.025 W1 = 280, W2 = 1, W3 = 280 W4 = 1 TL220, TL221, TL223, TL224 0.042 l, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 3.810 W1 = 150, W2 = 150, W3 = 150 TL222 0.019 l, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70 TL225, TL227 0.023 l, 20.93 W W = 3.810, L = 2.078 W = 150, L = 82 TL226, TL228 0.066 l, 20.93 W W = 3.810, L = 6.020 W = 150, L = 237 TL229, TL232 0.028 l, 20.93 W W = 3.810, L = 2.540 W = 150, L = 100 TL231, TL233 0.097 l, 20.93 W W = 3.810, L = 8.915 W = 150, L = 351 TL234, TL235 0.019 l, 20.93 W W1 = 3.810, W2 = 3.810, W3 = 1.778 W1 = 150, W2 = 150, W3 = 70, TL236 0.019 l, 20.93 W W = 3.810, L = 1.778 W = 150, L = 70 TL237 0.021 l, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80 TL238 (taper) 0.009 l, 7.95 W / 12.30 W W1 = 11.557, W2 = 7.112, L = 0.787 W1 = 455, W2 = 280, L = 31 Data Sheet 12 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information LTN/PTFB183404EF Test Fixture Part No. Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower RO4350, .020 (60/RNK47) RO4350, .020 (60/RNK47) C803 C801 VDD R802 R805 C802 R803 VDD S1 C202 10 F C214 S3 R801 R102 R804 + + S2 C205 C111 C203 R103 C102 C110 C212 C106 C210 C109 C201 C216 RF_IN C104 RF_OUT C103 C209 C108 C208 C211 C107 C213 C101 C112 R104 C204 R101 C206 + C215 10 F C105 VDD C207 PTFB183404_IN_02 PTFB183404_OUT_02 b183404f_CD_07-28-2010 Reference circuit assembly diagram (not to scale) Data Sheet 13 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Suggested Manufacturer P/N Input C101, C110 Chip capacitor, 4.7 F Digi-Key PCS3475CT-ND C102, C105 Chip capacitor, 0.1 F Digi-Key PCC104BCT-ND C103 Chip capacitor, 0.7 pF ATC ATC100B0R7BW500XB C104, C108, C109 Chip capacitor, 10 pF ATC ATC100B100JW500XB C106, C107 Chip capacitor, 1.7 pF ATC ATC100A1R7BW150XB C111, C112 Chip capacitor, 10 pF ATC ATC100A100JW500XB C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND R101, R102, R801, R804, R805 Resistor, 10 W Digi-Key P10ECT-ND R103, R104 Resistor, 10 W Digi-Key P10GCT-ND R802 Resistor, 1200 W Digi-Key P1.2KGCT-ND R803 Resistor, 1300 W Digi-Key P1.3KGCT-ND S1 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP5616TA-ND S3 Voltage Regulator Digi-Key LM7805 Chip capacitor, 1.4 pF ATC ATC100B1R4BW500XB Output C201 C202, C207 Chip capacitor, 10 F Digi-Key 587-1818-2-ND C203, C204 Tantalum capacitor, 10 F Digi-Key TPSE106K050R0400 C205, C206 Chip capacitor, 2.2 F Digi-Key 445-1447-2-ND C208 Chip capacitor, 0.4 pF ATC ATC100B0R4BW500XB C209 Chip capacitor, 1.8 pF ATC ATC100B1R8BW500XB C210, C211, C212, C213 Chip capacitor, 1.3 pF ATC ATC100B1R3BW500XB C214, C215 Chip capacitor, 1 F Digi-Key 445-1411-2-ND C216 Chip capacitor, 10 pF ATC ATC100B100JW500XB Data Sheet 14 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Pinout Diagram V1 V2 D1 D1 D2 S G1 D2 G1 E G2 F G2 H - 36275-8 _ P D _ 03 -24 - 2010 TOP VIEW V1 V2 D1 D2 S = flange G1 G2 H -37275- 6 /2 _ P D _ 11 -19 -2010 TOP VIEW Data Sheet 15 of 18 Pin V1 V2 G1 G2 D1 D2 E F S Description VDD Device 1 VDD Device 2 Gate Device 1 Gate Device 2 Drain Device 1 Drain Device 2 N.C. N.C. Source (flange) Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36275-8 4X 3.175 [.125] 13.716 [.540] 2X 45 X 1.19 [45 X .047] 4X 30 2x 2.032 [.080] REF CL 4X 1.143 [.045] 2X R1.587 [R.062] V1 D2 D1 V2 3.2260.508 [.127.020] S 9.398 [.370] C L E R0.508 +0.127 -0.508 005 [R.020+. -. 020 ] G1 G2 C L 1.626 [.064] 10.160 [.400] 16.612.500 [.654.020] F CL 4X 11.684 [.460] 2X 31.750 [1.250] 2.134 [.084] SPH 9.144 [.360] 35.560 [1.400] 254 4.585 +0. -.127 +. 010 [.180 -.005 ] 31.2420.280 [1.230.011] CL H - 36275 - 8_po _ 2- 18 -2010 41.148 [1.620] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = VDD; E, F = N.C.; S = source 5. Lead thickness: 0.127 +0.051/-0.025 [.005 +.002/-.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]. Data Sheet 16 of 18 Rev. 04, 2010-11-17 PTFB183404E PTFB183404F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37275-6/2 31.750 [1.250] 13.716 [.540] 2X 45 X 1.19 [45 X .047] 2X 2.032 [.080] REF 2X 1.143 [.045] CL V1 2X 30 2X 3.175 [.125] D1 D2 V2 9.398 [.370] CL G1 +.381 4X R0.508 -.127 +.015 R.020 -.005 [ ] 3.2260.508 [.127.020] 10.160 [.400] 9.144 [.360] 16.612.500 [.654.020] G2 C L C L 4X 11.684 [.460] 2.134 [.084] SPH 1.626 [0.064] 31.2420.280 [1.230.011] 4.585+0.250 -0.127 .180 +.010 -.005 [ CL ] h- 37275- 6-2_po _07-21- 2010 32.258 [1.270] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = VDD; S = source. 5. Lead thickness: 0.127 .051 [.005 .002]. 6. Gold plating thickness: 1.1 .38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 17 of 18 Rev. 04, 2010-11-17 PTFB183404E V1/ PTFB183404F V2 Confidential, Limited Internal Distribution Revision History: 2010-11-17 Previous Version: 2010-07-23, Data Sheet Page Subjects (major changes since last revision) All Merge the data sheet to include E and F versions. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-11-17 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 18 of 18 Rev. 04, 2010-11-17