RECTRON RECTIFIER SPECIALISTS SOT-23 Plastic-Encapsulate Transistors MMBTA42LT1 FEATURES Power dissipation Pew : 0.3 W CTamb=25C > Collector current lem: 0.3 A Collector-base voltage Vierjceo : 300 V Operating and storage junction temperature range Ty. Tstgi -55C to +150C ELECTRICAL CHARACTERISTICS Tamb=25'C TRANSISTOR NPN) SOT23 1. BASE 2. EMITTER 3. COLLECTOR 0,95 2.9 1.9 0.95 O.4 Unit: mm unless otherwise specified) Parameter Symbol Test conditions MIN MAX | UNIT Collector-base breakdown voltage Vierceo | Ilc= 100 HA, [e=0 310 Vv Collector-emitter breakdown voltage Vierrceo | lc= 1mA, = Ip=0 305 V Emitter-base breakdown voltage Viereso | le= 100HA, Ic=0 5 V Collector cut-off current Ice Vce=200V, IE=0 0.25 LA Emitter cut-off current lego Ves=5V, Ic=0 0.1 LA Heeci Vce= 104% Ic= 1mA 60 DC current gain Hreca) | Vee=10, Ic=10mA 100 200 Hrers =| Vee=10V, Ic=30mA 60 Collector-emitter saturation voltage Vece(sat) | lce=20mA, Ip= 2mA 0.2 V Base-emitter saturation voltage Vee(sat) | Ic=20mA, Ip=2mA 0.9 V Vce= 20V, Ic= 10mA Transition frequency fr 50 MHz f=30MHz DEVICE MARKING MVMBTA42LT1=1DTypical Characteristics Dc Current Gain vs Collector Current 140 NT GAN Ss 8 s hre -DC CURRE & 8 by o 10 100 I, -COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current = a oo oa om Vesar- BASE-EMITTER VOLTAGE (Vj o o om oh a 1 10 100 1, - COLLECTOR CURRENT (mA) Collector-Cut off Current vs Ambient Temperature a a o Vep= 1 I cao- COLLECTOR CURRENT (nA) o 1 25 50) 5 100 126 150 T, - AMBIENT TEMPERATURE (%C) MMBTA42LTI Colle ctor-Emitter Saturation Voltage vs Collector Current o te B =410 So ba mA o ho So = nA =) _ 0.05 a = 1 10 70 1, - COLLECTOR CURRENT (mA) Vezsar COLLECTOR-EMITTER VOLTAGE (Vv) Base-Emitter ON Voltage vs Collector Current Veeg=1V 2 oo 2 m a om Veen BASE-EMITTER ON VOLTAGE (VW) o.4 1 10 100 1, - COLLECTOR CURRENT (mA) Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 100 50 Bo a CAPACITANCE (pF) n oO 1 10 100 7000 REVERSE BIAS VOLTAGE (V)Power Dissipation vs Ambient Temperature SOT-223 o 2 ad an en a Bo on P,- POWER DISSIPATION (Wh 0 a5 50 75 100 125 150 TEMPERATURE (C)