NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
TISP4165H4BJ THRU TISP4200H4BJ,
TISP4265H4BJ THRU TISP4350H4BJ
HIGH HOLDING CURRENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Symbol
Device VDRM
V
V(BO)
V
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4265 200 265
‘4300 230 300
‘4350 275 350
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K.20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
Rated for International Surge Wave Shapes
12
T(A)R(B)
MDXXBG
How To Order
SMBJ Package (Top View)
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310
High Holding Current........................................... 225 mA min.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Low Differential Capacitance .................................. 67 pF max.
.............................................. UL Recognized Component
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP4xxxH4BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled
Bulk Pack
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
Insert xxx value corresponding to protection voltages of 165 through to 350.
Order As
*RoHS COMPLIANT
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
VDRM
±135
±145
±155
±200
±230
±275
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
55
60
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A diT/dt 400 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with TJ=25°C.
3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a
plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Thermal Characteristics
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min. Typ. Max. Unit
IDRM Repetitive peak off-
state current VD = VDRM TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
±165
±180
±200
±265
±300
±350
V
V(BO) Impulse breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4165
‘4180
‘4200
‘4265
‘4300
‘4350
±174
±189
±210
±276
±311
±363
V
I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE = 300 Ω±0.15 ±0.8 A
VTOn-state voltage IT=±5A, t
W= 100 µs±3V
IHHolding current IT=±5 A, di/dt = -/+30 mA/ms ±0.225 ±0.8 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs
IDOff-state current VD=±50 V TA = 85 °C±10 µA
Coff Off-state capacitance
f = 100 kHz, Vd=1V rms, V
D=0,
f = 100 kHz, Vd=1V rms, V
D=-1V
f = 100 kHz, Vd=1V rms, V
D=-2V
f = 100 kHz, Vd=1V rms, V
D=-50V
f = 100 kHz, Vd=1V rms, V
D= -100 V
(see Note 6)
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
‘4165 thru ‘4200
‘4265 thru ‘4350
80
70
71
60
65
55
30
24
28
22
90
84
79
67
74
62
35
28
33
26
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.
Parameter Test Conditions Min. Typ. Max. Unit
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7) 113
C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °
°
C50
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAB
VDRM
IDRM
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
Figure 4. Figure 5.
Figure 2. Figure 3.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TCHAG
VD = ±50 V
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.95
1.00
1.05
1.10 TC4HAF
TC4HAK
V - On-State Voltage - V
0.7 1.5 2 3 4 5 7101
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
TA = 25 °C
tW = 100 µs
TC4HAHA
'4265
THRU
'4350
'4165
THRU
'4200
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED BREAKDOWN VOLTAGE
vs
JUNCTION TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
Figure 6. Figure 7.
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25 °C
Vd = 1 Vrms
TC4HAIA
'4165 THRU '4200
'4265 THRU '4350
VDRM - Repetitive Peak Off-State Voltage - V
130 150 170 200 230 270 300
C - Differential Off-State Capacitance - pF
31
32
33
34
36
30
35
∆C = Coff(-2 V) - Coff(-50 V)
TCHAJA
'4165
'4180
'4200
'4300
'4350
'4265
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
Figure 8. Figure 9.
Figure 10. Figure 11.
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4HAC
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
t - Power Duration - s
0·1 1 10 100 1000
ZθJA(t) - Transient Thermal Impedance - °C/W
1.5
2
3
4
5
7
15
20
30
40
50
70
150
1
10
100
TI4HAE
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4HAFA
'4265 THRU '4350
'4165 THRU '4200
TA - Ambient Temperature - °C
-40-30-20-100 1020304050607080
Impulse Current - A
90
100
120
150
200
250
300
400
500
600
700
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
THERMAL IMPEDANCE
vs
POWER DURATION
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
IMPULSE RATING
vs
AMBIENT TEMPERATURE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Deployment
APPLICATIONS INFORMATION
Impulse Testing
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
Peak Current
Value
A
Current
Waveform
µs
TISP4xxxH4
25 °C Rating
A
Series
Resistance
Ω
GR-1089-CORE 2500 2/10 500 2/10 500 0
1000 10/1000 100 10/1000 100
FCC Part 68
(March 1998)
1500 10/160 200 10/160 250 0
800 10/560 100 10/560 160 0
1500 9/720 † 37.5 5/320 † 200 0
1000 9/720 † 25 5/320 † 200 0
I3124 1500 0.5/700 37.5 0.2/310 200 0
ITU-T K.20/K.21 1500
4000 10/700 37.5
100 5/310 200 0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12)
or in multiples to limit the voltage at several points in a circuit (Figure 13).
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This configuration is normally used to protect
circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conduc-
tor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)
value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1
is not required.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
Figure 12. Two Point Protection Figure 13. Multi-point Protection
Th1
Th3
Th2
Th1
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3
mm (3.0 ” x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a
worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate
higher power levels than indicated by the JESD51 values.
TISP4xxxH4BJ Overvoltage Protector Series
Capacitance
Normal System Voltage Levels
JESD51 Thermal Measurement Method
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.
In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus
time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit
imposed by the test standard (e.g. UL 1459 wiring simulator failure).
APPLICATIONS INFORMATION
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not
be less than the maximum normal system voltages. The TISP4265H4BJ, with a VDRM of 200 V, can be used for the protection of ring
generators producing 100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100
= 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the
extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at
the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient
temperature of -22 °C. In this example, the TISP4265H4BJ will allow normal equipment operation provided that the minimum expected
ambient temperature does not fall below -22 °C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Typical Circuits
APPLICATIONS INFORMATION
Figure 14. Modem Inter-wire Protection Figure 15. Protection Module
Figure 16. ISDN Protection
Figure 17. Line Card Ring/Test Protection
FUSE
TISP4350H4
AI6XBPA
RING DETECTOR
HOOK SWITCH
D.C. SINK
SIGNAL
MODEM
RING
TIP
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
PROTECTED
EQUIPMENT
E.G. LINE CARD
AI6XBK
R1a
R1b
Th3
Th2
Th1
AI6XBL
SIGNAL
D.C.
TEST
RELAY RING
RELAY SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
Th4
Th5
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
S3a
S3b
V
BAT
C1
220 nF
AI6XBJ
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH4BJ Overvoltage Protector Series
Recommended Printed Wiring Footprint
Device Symbolization Code
MECHANICAL DATA
SMB Pad Size
MDXXBI
2.54
(.100)
2.40
(.094)
2.16
(.085)
METRIC
(INCHES)
DIMENSIONS ARE:
Device Symbolization
Code
TISP4165H4BJ 4165H4
TISP4180H4BJ 4180H4
TISP4200H4BJ 4200H4
TISP4265H4BJ 4265H4
TISP4300H4BJ 4300H4
TISP4350H4BJ 4350H4
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in
the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk
pack or embossed tape.
Carrier Information
Carrier
Embossed Tape Reel Pack
Bulk Pack
TISP4xxxH4BJR-S
TISP4xxxH4BJ-S
Order As
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
