TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors * * * * * High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP100/101/102 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP105 : TIP106 : TIP107 Value - 60 - 80 - 100 Units V V V VCEO Collector-Emitter Voltage : TIP105 : TIP106 : TIP107 - 60 - 80 - 100 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -8 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) -1 A PC Collector Dissipation (Ta=25C) 2 W 80 W TJ Collector Dissipation (TC=25C) Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Equivalent Circuit C B R1 R2 R 1 10 k R 2 0.6 k E Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICEO ICBO Parameter Collector-Emitter Sustaining Voltage : TIP105 : TIP106 : TIP107 Test Condition IC = -30mA, IB = 0 Min. Max. -60 -80 -100 Units V V V Collector Cut-off Current : TIP105 : TIP106 : TIP107 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VCE = -50V, IB = 0 -50 -50 -50 A A A : TIP105 : TIP106 : TIP107 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCB = -100V, IE = 0 -50 -50 -50 A A A -2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE= -5V, IC = 0 hFE DC Current Gain VCE = -4V, IC = -3A VCE = -4V, IC = -8A VCE(sat) Collector-Emitter Saturation Voltage IC = -3A, IB = -6mA IC = -8A, IB = -80mA -2 -2.5 VBE(on) Base-Emitter ON Voltage VCE = -4V, IC = -8A -2.8 V Cob Output Capacitance VCB = -10V, IE = 0, f = 0.1MHz 300 pF (c)2001 Fairchild Semiconductor Corporation 1000 200 20000 V V Rev. A1, June 2001 TIP105/106/107 Typical Characteristics -5 10k IB = -800 uA VCE = -4V IB = -700 uA IB = -900 uA -4 IB = -600 uA IB = -500 uA -3 IB = -400 uA -2 IB = -300 uA -1 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -1000 uA 1k IB = -200 uA -0 -0 -1 -2 -3 -4 100 -0.1 -5 -1 Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 Ic[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain -100k 10k IC = 500 IB Cob[pF], CAPACITANCE f = 0.1 MHz IE = 0 -10k V BE(sat) -1k V CE(sat) -100 -0.1 -1 -10 1k 100 10 1 -0.1 -100 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 -100 0 -10 s DC 5m s -1 -0.1 TIP105 TIP106 TIP107 -0.01 -0.1 -1 -10 (c)2001 Fairchild Semiconductor Corporation 80 70 60 50 40 30 20 10 0 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area PC[W], POWER DISSIPATION 10 IC[mA], COLLECTOR CURRENT 90 1ms 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 TIP105/106/107 Package Demensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3