©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP105/106/107
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP105
: TIP106
: TIP107
- 60
- 80
- 100
V
V
V
VCEO Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
ICP Collector Current (Pulse) - 15 A
IB Base Current (DC) - 1 A
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP105
: TIP106
: TIP107
IC = -30mA, IB = 0 -60
-80
-100
V
V
V
ICEO Collector Cut-off Current : TIP105
: TIP106
: TIP107
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
-50
-50
-50
µA
µA
µA
ICBO Collector Cut-off Current : TIP105
: TIP106
: TIP107
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
-50
-50
-50
µA
µA
µA
IEBO Emitter Cut-off Current VBE= -5V, IC = 0 -2 mA
hFE DC Current Gain VCE = -4V, IC = -3A
VCE = -4V, IC = -8A 1000
200 20000
VCE(sat) Collector-Emitter Saturation Voltage IC = -3A, IB = -6mA
IC = -8 A, IB = -80mA -2
-2.5 V
V
VBE(on) Base-Emitter ON Voltage VCE = -4V, IC = -8A -2. 8 V
Cob Output Capacitance VCB = -10V , IE = 0, f = 0.1MHz 300 pF
TIP105/106/107
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use
Complementary to TIP100/101/102
R
110
k
R
20.6
k
Equivalent Circuit
B
E
C
R1 R2
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation
TIP105/106/107
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Volt age Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
IB = -800 uA
IB = -900 uA
IB = -1000 uA
IB = -700 uA
IB = -600 uA
IB = -500 uA
IB = -400 uA
IB = -300 uA
IB = -200 uA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR - EM ITT E R VOL TA G E
-0.1 -1 -10
100
1k
10k
VCE = -4V
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-100
-1k
-10k
-100k
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
1
10
100
1k
10k
f = 0. 1 M H z
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
-100
TIP106
TIP107
TIP105
5ms
100µs
1ms
DC
IC[mA], COLLECTOR CURRENT
VCE[V], COLLE CTOR- EMI TTE R VOLTAGE
0 255075100125150175
0
10
20
30
40
50
60
70
80
90
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TIP105/106/107
Dimensions in Millimeters
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Pro duct St atu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
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