30E D mm 7925237 oo2saes e pes Ga fz SGS-THOMSON _sIRFP 150/Fl-151/FI BAYT, iiicRoELEcrRoMcs IRFP 152/FI-153/Fl _S G S-THONSON THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss Rosion) Ip * IRFP150 100 V 0.055 Q 40A IRFP150FI | 100 V 0.055 Q 26A IRFP151 60 V 0.055 Q 40A IRFP151FI 60 V 0.055 Q 26 A IRFP152 100 V 0.08 Q 34A IRFP152Fl | 100 V 0.08 Q 21A IRFP153 60 V 0.08 2 34A IRFP153FI 60 V 0.08 2 21A 60 - 100 V FOR DC/DC CONVERTERS HIGH CURRENT RATED FOR UNCLAMPED INDUCTIVE TO-218 ISOWATT218 SWITCHING (ENERGY TEST) ULTRA FAST SWITCHING EASY DRIVE - FOR REDUCES COST AND SIZE INDUSTRIAL APPLICATIONS: 0 UNINTERRUPTIBLE POWER SUPPLIES AGS AT SCHEMATIC MOTOR CONTROLS N - channel enhancement mode POWER MOS field ef- fect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC con- verters, UPS, battery chargers, secondary regulators, ser- vo control, power audio amplifiers and robotics. . IRFP ABSOLUTE MAXIMUM RATINGS To-218 150 151 152 153 ISOWATT218 150Fl 151Fl 152Fl 153Fl Vos * Drain-source voltage (Vgg = 0) 100 60 100 60 Vv Vper * Drain-gate voltage (Rag 220 KQ) 100 60 100 60 Vv Gs Gate-source voltage +20 Vv low (*) Drain current (pulsed) ~ 160 160 140 140 A 150 151 152 153 Ip Drain current (cont.) at T,= 25C 40 40 34 34 A lb Drain current (cont.) at T,= 100C 26 26 22 22 A 150Ff 1517Fl 152Fl 153Fi Ip" Drain current (cont.) at T,= 25C . 26 26 a1 21 A ID" Drain current (cont.) at Tt = 100C 16 16 13 13 A TO-218 ISOWATT218 Prot Total dissipation at T, <25C 150 65 Ww Derating factor 1.2 0.52 WIC Tstg Storage temperature 55 to 150 C Tj Max. operating junction temperature 150 C x 25C to 125C (e) Repetitive Rating: Pulse width limited by max junction temperature. = See note on ISOWATT218 on this datasheet. * Introduced in 1988 week 44 June 1988 116 343IRFP 150/Fl - 151/El = 152/FL- 153/Fl a een JOE D HM 7924237? OOeI4eb 4 T-39~13 THERMAL DATA" TO-218 | ISOWATT218 Rinj- case Thermal resistance junction-case max 0.83 | 4.92 C/W Rincs Thermal resistance case-sink typ 0.1 C Rin-amb Thermal resistance junction-ambient max 30 CIW T Maximum lead temperature for soldering purpose 300 C SG S-THOMSON ELECTRICAL CHARACTERISTICS (T,,56= 25C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. | Unit OFF Vian) pss Drain-source Ip= 250 pA Ves= 0 breakdown voltage for IRFP150/152/150FI/152FI 100 Vv for IRFP151/153/151FI/153FI 60 Vv loss Zero gate voltage Vps= Max Rating 250 | pA drain current (Vag=0) | Vpg= Max Rating x 0.8 T,= 125C 1000; 2A lass Gate-body leakage Veg= 20 V +100}; nA current (Vpg = 9) ON nk Ves (th) Gate threshold voltage Vos = Ves Ip= 250 BA 2 4 Vv Ip(on) On-state drain current | Vpg> Ip (on) * Rpsion) max Vas = 10 V for IRFP150/151/150F1/151Fl 40 A for IRFP152/153/152F1/153Fl 34 A Ros (on) Static drain-source Veg= 10 V Ip= 22A on resistance for IRFP150/151/150F1/151FI 0.055) @ for 1RFP152/153/152F1/153Ft 0.08} 2 ENERGY TEST luis Unclamped inductive | Vpp= 30 V L = 100 pH switching current starting Tj= 25C (single pulse) for IRFP150/151/150F1/151Fl 40 A for IRFP152/153/152F1/153FI 34 A DYNAMIC Qs ** Forward Vps> |p (on * Fos (on) max 13 mho transconductance Ip= 22A . Ciss Input capacitance 3000 | pF Coss Output capacitance Vog= 25 V f= 1 MHz 1500 | pF Cres Reverse transfer Veg= 0 500 | pF capacitance 216 . 344SG S=THOMSON IRFP 150/Fl - 151/Fl - 152/Fl - 153/Fi 30E D M 7929237 00259827 & i ELECTRICAL CHARACTERISTICS (Continued) ! 7-39-13 - Parameters Test Conditions Min. | Typ. | Max. | Unit SWITCHING t Turn-on time Vop = am Vv Ip= 20A 35 | ns o (on) Rise time Riz 4. p 100 | ns t, d(oif) turn-off delay time (eee test circuit) 125 | ns tt Fall time 100 | ns Qg Total Gate Charge Veg=10 V Ip= 50A 110 | nc Vie= Max Rating x 0.8 (see test circuit) SOURCE DRAIN DIODE Isp Source-drain current | for IRFP150/151/150F1/151Fl 40 A for IRFP152/153/152F1/153Fl 34 A Ispw () Source-drain current | for IRFP150/151/150FI/151Fl 160) A (pulsed) for IRFP152/153/152F1/153Fl 140 | A Vgp** Forward on voliage Isp= 40 A Vas= 0 25] V tre Reverse recovery Tj = 150C 600 ns time Qr Reverse recovered Isp = 40 A di/dt = 100 A/us 3.3 pC charge ** Pulsed: Pulse duration < 300 ps, duty cycle < 1.5% (*) Repetitive Rating: Pulse v width limited by max junction temperature = See note on ISOWATT220 in this datasheet Safe operating areas Thermal impedance (standard package) (standard package) Ip K 6 a 1 10 10 104 Tc Ty 150C! | 2 0? ) 10 104 10? ww? 107 ISA SGS-THOMSON 10 tp (s} Derating curve (standard package) 0 20 40 60 80 100 120 Tease 3/6 ma RLORESIESTECR SS 345 Sa...IRFP 150/Fl - 151/Fl - 152/Fl - 153/F JOE D MM 7929237 0029426 56 UuUTpUT Cnaracteristics Output cnaracteristics tA Vog=t0 9 04 08 12 16 VpsiVi Transconductance Vos > baani*Rastent=ax 0 10 20 30 40 IptAl Gate charge vs gate-source voltage Vgst) Vgse20 Vps250 10] Vps=80V, IRF150,152 9 28 56 84 a,gin) 4/6 Rostead in) Om 010 CtpF) 3200 2400 1600 800 346 10 20 30 40 Static drain-source on resistance Vostv) o 40 80 120 Capacitance variation KT. SGS-THOMSON mi Fes] SELECTROMIES {Al S$ G S-THOMSON_ T-39-13 Transfer characteristics 23 4 5 6 7 8 9 10 VggtVl Maximum drain current vs temperature Ip a 50 B 100 425 Teasel C) Normalized breakdown voltage vs temperature {norm} 415 105 095 oes 075 4d 6 40 80 120 Ty (C)s 6 S- THOMSON spe yso/e= 154/61. 150/81..459/F 30E ) m= 7q29237 00296e9 T Normalized on resistance = ~ Source-drain diode forward ~ ~39-13 \ vs temperature characteristics 1 Restesy 18 14 1 0 0 ~40 Q 40 a0 Tec) 0 a 1 2 3 4A Vet) Unclamped inductive test circuit Unclamped inductive waveforms L Vier) oss VARY t, TO OBTAIN REQUIRED PEAK kgyq = i) we Vgs=10V | o G5 tp 0.050 $C-0336 $C-0339 Switching times test circuit Gate charge test circuit O Voo _ ADJUST R, PULSE R | TO OBTAIN GENERATOR | SPECIFIED ly rf Ves V 2 : O Os i DUT ; SC-0246 CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR St-0244 SGS TH SON 5/6 _ kyy, $S8THom 347IRFP_150/FL- 151/Fl - 152/Fl - 153/Fl_ 30E D M@M@ 7929237 0029830 6 ISOWATT218 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT218 is fully isolated to 4000V dc. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. These distan- ces are in agreement with VDE and UL creepage and clearance standards. The ISOWATT218 pac- kage eliminates the need for external isolation so reducing fixing hardware. The package is supplied with leads longer than the standard TO-218 to allow easy mounting on pebs. Accurate moulding techniques used in manufac- ture assures consistent heat spreader-to-heatsink capacitance ISOWATT218 thermal performance is better than that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT218 packages is determined by: Tj - Te Pp = Rin from this Ipmax for the POWER MOS can be cal- culated: Pp lbmax< max S Rosion) (at 150C) ISOWATT DATA Safe operating areas 6/6 348 Thermal impedance SG S-THOMSON "7-39-13 THERMAL IMPEDANCE OF ISOWATT218 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT218 package. The total thermal resistance Rin (toy is the sum of each of these elements. The transient thermal impedance, Z,, for different puise durations can be estimated as follows: { - for a short duration power pulse less than 1ms; Zin< Rthu-c 2 - for an intermediate power pulse of 5ms to 50ms: Zin= Pinu.c 3 - for long power pulses of the order of 500ms or greater: Zin= Rinec + Aires + Pints-amb It is often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 Rthu-c Renc-Hs Rehs-amb WA A A Derating curve 0 O 20 40 6O 80 {00 120 140 TeaselC)