APT14050JVFR 23A 0.500 1400V POWER MOS V (R) S S FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP (R) * Fast Recovery Body Diode * Avalanche Energy Rated * Lower Leakage * Popular SOT-227 Package D G * Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT14050JVFR UNIT 1400 Volts Drain-Source Voltage 23 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 694 Watts Linear Derating Factor 5.56 W/C PD TJ,TSTG 92 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 C 300 Amps 23 (Repetitive and Non-Repetitive) 1 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1400 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 11.5A) TYP MAX UNIT Volts 0.500 Ohms Zero Gate Voltage Drain Current (VDS = 1400V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 1120V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 4-2004 Characteristic / Test Conditions 050-7259 Rev A Symbol APT14050JVFR DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 13500 Coss Output Capacitance VDS = 25V 1150 Reverse Transfer Capacitance f = 1 MHz 600 VGS = 10V 820 VDD = 700V ID = 23A @ 25C 55 375 VGS = 15V 20 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) 3 Turn-on Delay Time tr VDD = 700V 18 ID = 23A @ 25C 110 RG = 0.6 20 Rise Time t d(off) Turn-off Delay Time tf Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX 23 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 92 VSD Diode Forward Voltage 2 (VGS = 0V, IS = ID -23A) 1.3 Volts 18 V/ns dv/ Peak Diode Recovery dt dv/ dt 5 t rr Reverse Recovery Time (IS = -ID 23A, di/dt = 100A/s) Tj = 25C 300 Tj = 125C 600 Q rr Reverse Recovery Charge (IS = -ID 23A, di/dt = 100A/s) Tj = 25C 1.8 Tj = 125C 7.4 IRRM Peak Recovery Current (IS = -ID 23A, di/dt = 100A/s) Tj = 25C 16 Tj = 125C 30 Amps ns C Amps THERMAL/ PACKAGE CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.18 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 2500 10 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (C/W) 4-2004 050-7259 Rev A 0.9 0.3 0 t1 t2 0.04 0.1 10-5 SINGLE PULSE 10-4 lb*in 4 Starting Tj = +25C, L = 13.61mH, RG = 25, Peak IL = 23A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID23A di/dt 700A/s VR 1400 TJ 150C 0.20 0.05 C/W Volts APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT14050JVFR 60 Junction temp. (C) 0.0262 Power (watts) 0.133 0.0219 0.0330F 0.760F 36.6F ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V RC MODEL Case temperature. (C) 80 60 TJ = -55C TJ = +25C TJ = +125C 20 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 4.5V 10 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 D 2.5 1.10 1.05 1.00 0.95 0.90 = 11.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V NORMALIZED TO = 10V @ 11.5A GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 ID, DRAIN CURRENT (AMPERES) 20 0 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 20 1.15 25 3.0 30 050-7259 Rev A 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 5V 40 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 50 50 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss C, CAPACITANCE (pF) 100S 10 5 1 1mS 100 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 = 23A 12 VDS= 280V 8 Coss 1,000 Crss 1 10 100 500 1400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 D 10,000 10mS TC =+25C TJ =+150C SINGLE PULSE I APT14050JVFR 60,000 OPERATION HERE LIMITED BY RDS (ON) IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 92 VDS= 700V VDS= 1000V 4 0 0 200 400 600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 TJ =+150C TJ =+25C 10 1 0.3 0.7 1.1 1.5 1.9 2.3 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 4-2004 050-7259 Rev A 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.