2SK3589-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 MARKING Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings DIMENSIONS ARE IN MILLIMETERS. (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C Tch Tstg MARKING Ratings 100 70 50 6.9 ** 200 30 50 465 20 5 123 2.4 +150 Unit V V A A A V A mJ kV/s kV/s W W C C Note:1. Dimension shown in ( ) is reference values. Trademark . Special specification for customer CONNECTION 11 GG: :Gate Gate D 22 S1 S1: :Source1 Source1 33 S2 S2: :Source2 Source2 4G4 DD: :Drain Drain Lot No. No. S1 Type name S2 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source -55 to +150 ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=223H, Vcc=48V *2 Tch< = BVDSS, Tch < = 150C = -ID, -di/dt=50A/s, Vcc < =150C *3 IF < *5 VGS=-30V *4 VDS < =100V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=25A VGS=10V Typ. 100 3.0 Tch=25C Tch=125C ID=25A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V 19 RGS=10 V CC =50V ID=50A VGS=10V L=100H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C 10 19 25 1830 460 38 20 35 50 23 52 16 18 Max. 5.0 25 250 100 25 2745 690 57 30 53 75 35 78 24 27 50 1.10 0.1 0.4 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) www.fujielectric.co.jp/denshi/scd Min. Typ. Max. 0.93 87.0 52.0 Units C/W C/W C/W 1 2SK3589-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 200 Allowable Power Dissipation PD=f(Tc) 5 Surface mounted on 2 1000mm ,t=1.6mm FR-4 PCB 175 2 (Drain pad area : 500mm ) 4 150 3 PD [W] PD [W] 125 100 2 75 50 1 25 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 Tc [C] Tc [C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 500 200 20V 400 160 300 120 ID [A] EAV [mJ] 10V 200 8V 7.5V 80 7.0V 100 6.5V 40 6.0V VGS=5.5V 0 0 25 50 75 100 125 0 150 0 2 4 6 8 10 12 VDS [V] starting Tch [C] Typical Transfer Characteristic Typical Transconductance ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 10 10 gfs [S] ID[A] 100 1 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 1 10 100 ID [A] 2 2SK3589-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 60 0.15 VGS= 5.5V 6.0V 6.5V 7.0V 0.12 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V 50 0.09 RDS(on) [ m ] RDS(on) [ ] 7.5V 8V 0.06 10V 40 max. 30 20 0.03 typ. 10 20V 0 0.00 0 40 80 120 160 -50 200 -25 0 25 Gate Threshold Voltage vs. Tch A VGS(th)=f(Tch):VDS=VGS,ID=250 7.0 50 75 100 125 150 Tch [C] ID [A] Typical Gate Charge Characteristics VGS=f(Qg):ID=50A, Tch=25C 6.5 14 6.0 12 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 2.5 2.0 Vcc= 50V 8 6 4 1.5 1.0 2 0.5 0.0 -50 -25 0 25 50 75 100 125 0 150 0 20 40 Tch [C] 10 1 60 80 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 0 IF [A] 10 C [nF] 10 Coss 10 -1 1 Crss 10 -2 10 -1 10 0 10 VDS [V] 1 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] 3 2SK3589-01 FUJI POWER MOSFET Typical Switching Characteristics vs. ID Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB t=f(ID):Vcc=48V, VGS=10V, RG=10 10 3 100 90 2 td(off) tr t [ns] 10 Rth(ch-a) [C/W] tf 70 60 50 40 td(on) 10 80 1 30 20 10 10 0 0 10 -1 10 0 10 1 10 0 2 1000 2000 3000 4000 5000 2 Drain Pad Area [mm ] ID [A] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 10 -5 -4 -3 10 10 10 -2 -1 0 10 10 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Avalanche Current I AV [A] Single Pulse 10 1 10 0 -1 10 -2 10 -8 10 -7 10 10 -6 10 -5 10 -4 10 -3 -2 10 tAV [sec] 4