N-Channel MOSFET 500V, 23.0A, 0.245 These N-channel MOSFET are produced using advanced MagnaChip's MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. VDS = 500V ID = 23.0A RDS(ON) 0.245 N-Channel MOSFET 500V Features General Description . @ VGS = 10V @ VGS = 10V Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply HID Lighting D G S D S G TO-247 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V 23 A 14.6 A o TC=25 C Continuous Drain Current Pulsed Drain Current ID o TC=100 C (1) IDM TC=25oC Power Dissipation Derate above 25 oC Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt 92 A 290 W 2.33 W/ oC 29 mJ dv/dt 4.5 V/ns EAS 950 mJ TJ, Tstg -55~150 PD EAR (3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range o C * ID limited by maximum junction temperature Thermal Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient(1) Characteristics RJA 40 Thermal Resistance, Junction-to-Case(1) RJC 0.44 Dec. 2012. Ver 1.0 1 Unit o MDQ23N50D MDQ23N50D C/W MagnaChip Semiconductor Ltd. MDQ23N50D Ordering Information Part Number Temp. Range Package Packing RoHS Status MDQ23N50DTP -55~150oC TO-247 Tube Pb Free Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 A Gate Leakage Current IGSS VGS = 30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 11.5A - 0.2 0.245 gfs VDS = 30V, ID = 11.5A - 13 - S - 76 - - 16 - - 20 - - 3280 - - 23 - Drain-Source ON Resistance Forward Transconductance V Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 400V, ID = 23A, VGS = 10V nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 325 - Turn-On Delay Time td(on) - 50 - - 155 - - 230 - - 195 - - - 23 A - - 1.4 V - 450 - ns - 6 - C Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 23A, RG = 25 tf Drain-Source Body Diode Characteristics Maximum Continuos Drain to IS Source Diode Forward Current Source-Drain Diode Forward VSD Voltage Body Diode Reverse Recovery trr Time Body Diode Reverse Recovery Qrr Charge IS = 23A, VGS = 0V IF = 23A, dl/dt = 100A/s(3) pF ns Notes : 1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 23A, di/dt200A/us, VDDBVdss, Rg =25, Starting TJ=25C 4. L=3.24mH, IAS=23A, VDD=50V, Rg =25, Starting TJ=25C Dec. 2012. Ver 1.0 2 MagnaChip Semiconductor Ltd. N-Channel MOSFET 500V Electrical Characteristics (Ta =25oC) 0.6 60 50 45 0.5 0.4 RDS(on)[ ] 40 Notes 1. 250 Pulse Test 2. TC=25 35 30 25 Vgs=10V 0.3 0.2 20 Vgs = 20V 15 10 0.1 5 0 0 5 10 15 20 0.0 25 10 20 VDS,Drain-Source Voltage [V] 40 50 60 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 3.0 1.2 Notes : 1. VGS = 10 V 2. ID = 23A 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 30 ID Current [A] 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 Notes : 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 200 0 o IDR Reverse Drain Current [A] ID(A) 10 150 25 -55 4 5 6 7 10 150 25 1 0.1 0.2 0.1 8 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec. 2012. Ver 1.0 200 Notes : 1. VGS = 0 V 2.250s Pulse test * Notes ; 1. Vds=30V 3 150 Fig.4 Breakdown Voltage Variation vs. Temperature 100 2 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 1 50 o T J, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. N-Channel MOSFET 500V Vgs=4.5V =5.0V =6.0V =7.0V =8.0V =10.0V =15.0V 55 ID,Drain Current [A] MDQ23N50D 65 MDQ23N50D 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Note : ID = 23A 10 Ciss Capacitance [pF] 400V 6 4 4000 Coss 3000 Notes ; 1. VGS = 0 V 2. f = 1 MHz 2000 Crss 2 1000 0 0 0 10 20 30 40 50 60 70 1 80 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 N-Channel MOSFET 500V VGS, Gate-Source Voltage [V] 5000 100V 250V 8 Fig.8 Capacitance Characteristics 2 10 s Operation in This Area is Limited by R DS(on) 24 100 s 22 1 ms 10 10 ID, Drain Current [A] ID, Drain Current [A] 20 10 ms 100 ms DC 1 0 18 16 14 12 10 8 6 Single Pulse TJ=Max rated TC=25 10 4 2 -1 0 10 -1 0 10 10 1 10 2 25 50 75 100 Fig.9 Maximum Safe Operating Area 150 Fig.10 Maximum Drain Current vs. Case Temperature 50000 0 10 single Pulse RthJC = 0.43/W TC = 25 D=0.5 0.2 -1 10 Power (W) Z JC(t), Thermal Response 125 TC, Case Temperature [] VDS, Drain-Source Voltage [V] 0.1 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=0.43/W 0.02 -2 10 0.01 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec. 2012. Ver 1.0 1E-4 4 MagnaChip Semiconductor Ltd. MDQ23N50D Physical Dimension TO-247 P E A L1 D E2 D1 S Q A2 b2 L b1 b E1 c e Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e L 5.45BSC 19.81 20.57 L1 - 4.50 P 3.50 3.70 Q 5.38 S Dec. 2012. Ver 1.0 A1 6.20 6.15BSC 5 MagnaChip Semiconductor Ltd. N-Channel MOSFET 500V Dimensions are in millimeters, unless otherwise specified MDQ23N50D N-Channel MOSFET 500V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec. 2012. Ver 1.0 6 MagnaChip Semiconductor Ltd.