Dec. 2012. Ver 1.0 MagnaChip Semiconductor Ltd.
1
MDQ23N50D N-Channel MOSFET 500V
.
Absolute Maximum Ratings (Ta = 25
o
C)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current TC=25oC ID 23 A
TC=100oC 14.6 A
Pulsed Drain Current(1) IDM 92 A
Power Dissipation TC=25oC PD 290 W
Derate above 25 oC
2.33 W/ oC
Repetitive Avalanche Energy(1) EAR 29 mJ
Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns
Single Pulse Avalanche Energy(4) EAS 950 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
* ID limited by maximum junction temperature
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(1) RθJA 40 oC/W
Thermal Resistance, Junction-to-Case(1) RθJC 0.44
MDQ23N50D
N-Channel MOSFET 500V, 23.0A, 0.245Ω
Features
VDS = 500V
ID = 23.0A @ VGS = 10V
RDS(ON) ≤ 0.245Ω @ VGS = 10V
Applications
Power Supply
HID
Lighting
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
D
G
S
TO-247
D
S
Dec. 2012. Ver 1.0 MagnaChip Semiconductor Ltd.
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MDQ23N50D N-Channel MOSFET 500V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDQ23N50DTP -55~150oC TO-247 Tube Pb Free
Electrical Characteristics (Ta =25oC)
Characteristics Symbol
Test Condition Min Typ Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V 500 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 11.5A - 0.2 0.245
Ω
Forward Transconductance gfs VDS = 30V, ID = 11.5A - 13 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = 400V, ID = 23A, VGS = 10V
- 76 -
nC
Gate-Source Charge Qgs - 16 -
Gate-Drain Charge Qgd - 20 -
Input Capacitance Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
- 3280
-
pF Reverse Transfer Capacitance Crss - 23 -
Output Capacitance Coss - 325 -
Turn-On Delay Time td(on)
VGS = 10V, VDS = 250V, ID = 23A,
RG = 25Ω
- 50 -
ns
Rise Time tr - 155 -
Turn-Off Delay Time td(off) - 230 -
Fall Time tf - 195 -
Drain-Source Body Diode Characteristics
Maximum Continuos Drain to
Source Diode Forward Current IS - - 23 A
Source-Drain Diode Forward
Voltage VSD IS = 23A, VGS = 0V - - 1.4 V
Body Diode Reverse Recovery
Time trr
IF = 23A, dl/dt = 100A/µs(3)
- 450 - ns
Body Diode Reverse Recovery
Charge Qrr - 6 - µC
Notes :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤23A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=3.24mH, IAS=23A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Dec. 2012. Ver 1.0 MagnaChip Semiconductor Ltd.
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MDQ23N50D N-Channel MOSFET 500V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
2 3 4 5 6 7 8
0.1
1
10
100
-55℃
25℃
150℃
* Notes ;
1. Vds=30V
ID(A)
V
GS
[V]
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
25℃
150℃
Notes :※
1. VGS = 0 V
2.250µs Pulse test
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
-50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
10 20 30 40 50 60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Vgs = 20V
Vgs=10V
RDS(on)[Ω ]
ID Current [A]
0 5 10 15 20 25
0
5
10
15
20
25
30
35
40
45
50
55
60
65
Notes
1. 250㎲
㎲㎲
㎲ Pulse Test
2. TC=25℃
℃℃
℃
Vgs=4.5V
=5.0V
=6.0V
=7.0V
=8.0V
=10.0V
=15.0V
ID,Drain Current [A]
VDS,Drain-Source Voltage [V]
-50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
※※
※
1. VGS = 10 V
2. ID = 23A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Dec. 2012. Ver 1.0 MagnaChip Semiconductor Ltd.
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MDQ23N50D N-Channel MOSFET 500V
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
Fig.12 Single Pulse Maximum Power
Dissipation
10-1 100101102
10-1
100
101
10210 µs
100 µs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
℃℃
℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
18
20
22
24
ID, Drain Current [A]
TC, Case Temperature [ ]℃
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM
* Zθ JC
* Rθ JC
(t) + TC
RΘ JC
=0.43 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
0 10 20 30 40 50 60 70 80
0
2
4
6
8
10
100V
250V
400V
Note : I※
※※
※D = 23A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
1 10
0
1000
2000
3000
4000
5000
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
1E-5 1E-4 1E-3 0.01 0.1 1
0
50000
single Pulse
RthJC = 0.43 /W℃
℃℃
℃
TC = 25℃
℃℃
℃
Power (W)
Pulse Width (s)
Dec. 2012. Ver 1.0 MagnaChip Semiconductor Ltd.
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MDQ23N50D N-Channel MOSFET 500V
E
D
Q
L
L1
e
b
b2
b1
A
A1
c
D1
E1
ΦP
S
A2
E2
Physical Dimension
TO-247
Dimensions are in millimeters, unless otherwise specified
Dimension Min(mm) Max(mm)
A 4.70 5.31
A1 2.20 2.60
A2 1.50 2.49
b 0.99 1.40
b1 2.59 3.43
b2 1.65 2.39
c 0.38 0.89
D 20.30 21.46
D1 13.08 -
E 15.45 16.26
E1 13.06 14.02
E2 4.32 5.49
e 5.45BSC
L 19.81 20.57
L1 - 4.50
ΦP 3.50 3.70
Q 5.38 6.20
S 6.15BSC
Dec. 2012. Ver 1.0 MagnaChip Semiconductor Ltd.
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MDQ23N50D N-Channel MOSFET 500V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.