Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 7 1Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components b y integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
•Pb−Free Packages are Available
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°C/W
Thermal Resistance, Junction-to-Ambient RJA 618 (Note 1)
403 (Note 2) °C/W
Thermal Resistance, Junction-to-Lead RJL 280 (Note 1)
332 (Note 2) °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC−70/SOT−323
CASE 419
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
6x = Specific Device Code
(See Order Info Table)
M = Date Code
6x M
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
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MUN5111T1 Series
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ORDERING INFORMATION AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping†
MUN5111T1 SC−70/SOT−323 6A 10 10 3000/Tape & Reel
MUN5111T1G SC−70/SOT−323
(Pb−Free) 6A 10 10 3000/Tape & Reel
MUN5112T1 SC−70/SOT−323 6B 22 22 3000/Tape & Reel
MUN5112T1G SC−70/SOT−323
(Pb−Free) 6B 22 22 3000/Tape & Reel
MUN5113T1
MUN5113T3 SC−70/SOT−323 6C 47 47 3000/Tape & Reel
10,000/Tape & Reel
MUN5113T1G SC−70/SOT−323
(Pb−Free) 6C 47 47 3000/Tape & Reel
MUN5114T1 SC−70/SOT−323 6D 10 47 3000/Tape & Reel
MUN5114T1G SC−70/SOT−323
(Pb−Free) 6D 10 47 3000/Tape & Reel
MUN5115T1 (Note 3) SC−70/SOT−323 6E 10 ∞3000/Tape & Reel
MUN5115T1G (Note 3) SC−70/SOT−323
(Pb−Free) 6E 10 ∞3000/Tape & Reel
MUN5116T1 (Note 3) SC−70/SOT−323 6F 4.7 ∞3000/Tape & Reel
MUN5130T1 (Note 3) SC−70/SOT−323 6G 1.0 1.0 3000/Tape & Reel
MUN5130T1G (Note 3) SC−70/SOT−323
(Pb−Free) 6G 1.0 1.0 3000/Tape & Reel
MUN5131T1 (Note 3) SC−70/SOT−323 6H 2.2 2.2 3000/Tape & Reel
MUN5131T1G (Note 3) SC−70/SOT−323
(Pb−Free) 6H 2.2 2.2 3000/Tape & Reel
MUN5132T1 (Note 3) SC−70/SOT−323 6J 4.7 4.7 3000/Tape & Reel
MUN5132T1G (Note 3) SC−70/SOT−323
(Pb−Free) 6J 4.7 4.7 3000/Tape & Reel
MUN5133T1 (Note 3) SC−70/SOT−323 6K 4.7 47 3000/Tape & Reel
MUN5133T1G (Note 3) SC−70/SOT−323
(Pb−Free) 6K 4.7 47 3000/Tape & Reel
MUN5134T1 (Note 3) SC−70/SOT−323 6L 22 47 3000/Tape & Reel
MUN5135T1 (Note 3) SC−70/SOT−323 6M 2.2 47 3000/Tape & Reel
MUN5136T1 SC−70/SOT−323 6N 100 100 3000/Tape & Reel
MUN5137T1 SC−70/SOT−323 6P 47 22 3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
MUN5111T1 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current MUN5111T1
(VEB = 6.0 V, IC = 0) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
IEBO −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN5111T1
(VCE = 10 V, IC = 5.0 mA) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
VCE(sat) − − 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN5113T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) MUN5136T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) MUN5137T1
VOL −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
MUN5111T1 Series
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
VOH 4.9 − − Vdc
Input Resistor MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R1/R20.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RJA = 833°C/W
MUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=−25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
−25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=−25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=−25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MUN5111T1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0 10 20 30
VO = 0.2 V
TA=−25°C
75°C
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=−25°C
50
010 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
−25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=−25°C
VO = 5 V
MUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
−25°C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
−25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=−25°C
25°C
75°C
50
IC/IB = 10
TA=−25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
MUN5111T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
−25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25°C
IC/IB = 10 TA=−25°C
TA=75°C25°C
−25°C
VO = 5 V
VO = 0.2 V 25°C
TA=−25°C
75°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
−25°C
75°C25°C
−25°C
Figure 23. Maximum Collector Voltage versus
Collector Current Figure 24. DC Current Gain
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. Input Voltage versus Output Current
IC, OUTPUT CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050 IC, COLLECTOR CURRENT (mA) 120200
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
10
4
6050403020100
0
Cob, CAPACITANCE (pF)
1
2
5
7
100
6543210
0.01
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
302520151050
0.1
1
454035 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
75°C
25°C
75°C
25°C
40 60 80 100
3
6
8
9
0.1
−25°C
−25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
75°C
25°C
−25°C
Figure 28. Maximum Collector Voltage versus
Collector Current Figure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210 IC, COLLECTOR CURRENT (mA) 100101
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = −25°C
VCE = 10 V
75°C
25°C
TA = −25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = −25°C
f = 1 MHz
IE = 0 V
TA = 25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
Figure 33. Maximum Collector Voltage versus
Collector Current Figure 34. DC Current Gain
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050 IC, COLLECTOR CURRENT (mA) 100101
100
10
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2 f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = −25°C
VO = 5 V
75°C
25°C
TA = −25°C
VO = 0.2 V
75°C
25°C
TA = −25°C
IC/IB = 10 VCE = 10 V
75°C
25°C
TA = −25°C
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PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CN
AL
D
G
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.032 0.040 0.80 1.00
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
S0.079 0.095 2.00 2.40
0.05 (0.002)
mm
inches
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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