SIEMENS BCR 133 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=10kQ, Ro=10kQ) YPS05161 eueries. Type Marking |Ordering Code Pin Configuration Package BCR 133 wCs [Q62702-C2256 [1=B (2=E [3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VocEo 50 Vv Collector-base voltage Voro 50 Emitter-base voltage Vepo 10 Input on Voltage Vicon) 20 DC collector current Io 100 mA Total power dissipation, Tg = 102C Prot 200 mw Junction temperature jj 150 C Storage temperature Tetg - 65... + 150 Thermal Resistance Junction ambient =?) Rina < 350 KAW Junction - soldering point Fins < 240 1) Package mounted on peb 40mm x 40mm x 1.5mm / Gem? Cu Semiconductor Group 611 11.96 SIEMENS BCR 133 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage VisrycEO Vv Ig = 100 PA, ip = 0 50 - - Collector-base breakdown voltage VipRycBO Io = 10 pA, fg = 0 50 - - Collector cutoff current lcBo nA Vop = 40 V, fe = 0 - - 100 Emitter cutoff current leBo pA Vep = 10V, io =0 - - 750 DC current gain hee - lo =5mA, Voe =5V 30 - - Collector-emitter saturation voltage 1) | Vcesat Vv lo = 10 MA, Ig = 0.5 MA - - 0.3 Input off voltage Viorty lo = 100 HA, Vop = 5 V 0.8 - 15 Input on Voitage Vicon) lo=2 MA, Veg = 0.3 V 1 - 2.5 input resistor A, 7 10 13 kQ2 Resistor ratio Ry/Ro 0.9 1 1.1 - AC Characteristics Transition frequency fr MHz lo = 10 MA, Voge = 5 V, f= 100 MHz - 130 - Coliector-base capacitance Cop pF Veg = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300us; D < 2% Semiconductor Group 612 11.96 SIEMENS BCR 133 DC Current Gain hee = f (Ic) Voce = 5V (common emitter configuration) 103 Pre 102 109 10 Input on Voltage Vion) = A/c) Voge = 0.3V (common emitter configuration) _ ifon) Semiconductor Group 613 Collector-Emitter Saturation Voltage Vcesat = Alc), re = 20 102 101 10 0.0 0.2 0.4 0.6 Input off voltage Vor = f(/c) Voce = 5V (common emitter configuration) 10! 10 15 2.0 v i Nott 11.96 SIEMENS BCR 133 Total power dissipation Pio = f(7a*; Ts) * Package mounted on epoxy mw 2 00 \ 7, T 150 \ 100 \ . \ 0 20 40 60 80 100 120 C 150 m a's Permissible Pulse Load Finjs = ftp) Semiconductor Group Permissible Pulse Load Protmax / Ptotoc = Abb} Oo it SOOO000 amn=s-o00 age i mt a LCS ll 614 11.96