Transient Voltage Suppression Diodes
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/20/15
Surface Mount – 1000W > 1KSMB series
The 1KSMB series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Description
Agency Approvals
Features
• 1000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• VBR @ TJ= VBR@25°C
x (1+αT x (TJ - 25))
(αT:Temperature
Coefficient, typical value
is 0.1%)
• Glass passivated chip
junction
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical IR less than 1μA
when VBR max>12V
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260°C
• Matte tin lead–free Plated
• Available in breakdown
Voltage from 6.8V to 180V
specially designed for
automotive applications
• Offers high-surge rating in
compact package: bridges
the gap between 600W
and 1.5KW
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Applications
TVS devices are ideal for the protection of I/O Interfaces,
VCC bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic
applications.
Maximum Ratings and Thermal Characteristics
(TA=25OC unless otherwise noted)
Parameter Symbol Value Unit
Peak Pulse Power Dissipation at
TA=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
PPPM 1000 W
Power Dissipation on Infinite Heat
Sink at TL=50OCPD5.0 W
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3) IFSM 120 A
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only
VF3.5 V
Operating Temperature Range TJ-65 to 150 °C
Storage Temperature Range TSTG -65 to 175 °C
Typical Thermal Resistance Junction
to Lead RθJL 20 °C/W
Typical Thermal Resistance Junction
to Ambient RθJA 100 °C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
AGENCY AGENCY FILE NUMBER
E230531
1KSMB Series
Functional Diagram
Bi-directional
Uni-directional
Cathode Anode
Bi-directional
Uni-directional
RoHS
Additional Infomarion
Resources