1
Subject to change without notice.
www.cree.com/wireless
CGH55015F1 / CGH55015P1
15 W, 5500-5800 MHz, GaN HEMT for WiMAX
Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specically for high efciency, high gain
and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1
ideal for 5.5-5.8 GHz WiMAX and linear amplier applications. The transistor
is available in both screw-down, ange and solder-down, pill packages.
Based on appropriate external match adjustment, the CGH55015F1/
CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.
Package Type: 440196 & 440166
PN: CGH55015P1 & CGH55015F1
Rev 3.3 – April 2012
Features
• 5.5 - 5.8 GHz Operation
• 15 W Peak Power Capability
• >10.5 dB Small Signal Gain
• 2 W PAVE < 2.0 % EVM
• 25 % Efciency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Typical Performance 5.5-5.8GHz (TC = 25˚C)
Parameter 5.50 GHz 5.65 GHz 5.80 GHz Units
Small Signal Gain 10.7 11.0 10.7 dB
EVM at PAVE = 23 dBm 1.9 1.8 2.0 %
EVM at PAVE = 33 dBm 1.5 1.5 1.7 %
Drain Efciency at PAVE = 33 dBm 25 25 25 %
Input Return Loss 11.5 14.5 10.5 dB
Note:
Measured in the CGH55015-TB amplier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
2CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Power Dissipation PDISS 7 Watts
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 4.0 mA 25˚C
Maximum Drain Current1IDMAX 1.5 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ60 in-oz
Thermal Resistance, Junction to Case3RθJC 8.0 ˚C/W 85˚C
Case Operating Temperature3TC-40, +150 ˚C 30 seconds
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
3 Measured for the CGH55015 at PDISS = 7W.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage VGS(Q) –-2.7 –VDC VDS = 28 V, ID = 115 mA
Saturated Drain Current IDS 2.9 3.5 –A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 3.6 mA
RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain GSS 8.5 11.0 – dB VDD = 28 V, IDQ = 115 mA
Drain Efciency4η20.6 25 – % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W
Error Vector Magnitude EVM –2.0 2.5 % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W
Output Mismatch Stress VSWR – – 10 : 1 Y
No damage at all phase angles,
VDD = 28 V, IDQ = 115 mA,
PAVE = 2.0 W
Dynamic Characteristics
Input Capacitance CGS –4.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS –1.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD –0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH55015-TB test xture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type
RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efciency = POUT / PDC.
3CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
-4
-3
-2
-1
0
1
2
8
9
10
11
12
13
14
S11 (dB)
S21 (dB)
Gain and Input Retrun Loss vs Frequency of
CGH55015F Vdd=28 V,Idq=115 mA
-12
-11
-10
-9
-8
-7
-6
-5
0
1
2
3
4
5
6
7
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1
S11 (dB)
S21 (dB)
Frequency (GHz)
S21 S11
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency of
CGH55015 in the CGH55015-TB
VDD = 28 V, IDQ = 115 mA
EVM and Efciency of CGH55015 vs. Frequency
in the CGH55015-TB
VDD = 28 V, IDQ = 115 mA, POUT = 2.5 W
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding
Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
24%
27%
30%
1.8
2.4
3.0
Drain Efficiency
EVM (%)
EVM & Efficiency of CGH55015 vs. Freqeuncy
Vdd=28V,Idq=115 mA,Pout=33 dBm
15%
18%
21%
0.0
0.6
1.2
5.45 5.50 5.55 5.60 5.65 5.70 5.75 5.80 5.85
Drain Efficiency
EVM (%)
Frequency (GHz)
EVM
Drain Efficiency
4CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical WiMAX Performance
Drain Efciency and Gain vs Power Output of the CGH55015 in the CGH55015-TB
VDD = 28 V, IDQ = 115 mA, 802.16-2004 OFDM, PAR = 9.8 dB
Typical EVM and Drain Efciency vs Output Power of CGH55015 in the CGH55015-TB at
5.50 GHz, 5.65 GHz, 5.80 GHz, 802.16-2004 OFDM, PAR=9.8 dB
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding
Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
20
25
30
35
8
10
12
14
B)
Gain, EVM and Drain Efficiency vs Output Power
Vdd = 28 V, Idq=115 mA
5.50 GHz (Gain)
5.65 GHz (Gain)
5.80 GHz (Gain)
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
0
5
10
15
0
2
4
6
15 20 25 30 35
Gain (d
Power Output (dBm)
20
25
30
35
8.0
10.0
12.0
14.0
Drain Efficiency (%)
EVM (%)
Typical EVM vs Output Power of CGH55015F
5.50 GHz, 5.65GHz, 5.80GHz
5.50 GHz (EVM) 5.65 GHz (EVM) 5.80 GHz (EVM)
5.50 GHz (Efficiency) 5.65 GHz (Efficiency) 5.80 GHz (Efficiency)
0
5
10
15
0.0
2.0
4.0
6.0
15 20 25 30 35
Drain Efficiency (%)
EVM (%)
Power Output (dBm)
5CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
Note:
MER is the metric of choice for cable systems and can be related to EVM by the following equation:
EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average constellation
power ratio” which varies with the modulation type: MTA = 0 for BPSK and QPSK; 2.55 for 16QAM
and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplier Circuit
Note:
Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB.
33
34
35
36
37
38
39
40
15 20 25 30 35 40
Power Output (dBm)
Modulation Error Ratio (dB)
5.50 GHz
5.65 GHz
5.80 GHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
15 20 25 30 35 40
Power Output (dBm)
EVM (%)
5.50 GHz
5.65 GHz
5.80 GHz
6CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1/P1
VDD = 28 V, IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1/P1
VDD = 28 V, IDQ = 115 mA
Minimum Noise Figure (dB)
Noise Resistance (Ohms)
MAG (dB)
K Factor
7CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 8.7 – j30.2 21.6 – j4.7
5650 10.2 – j26.9 24.2 - j5.5
5800 12.3 – j24.3 26.5 - j7.5
Note 1. VDD = 28V, IDQ = 115 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55015-TB demonstration
amplier and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH55015-TB Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
C1 CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S 1
C2 CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L 1
C9 CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S 1
C4,C11 CAP, 18pF, +/-5%, 0603, ATC 600S 2
C5,C12 CAP, 39pF +/-5%, 0603, ATC 600S 2
C6,C13 CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 2
C7,C14 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 2
C8 CAP, 10UF, 16V, SMT, TANTALUM 1
C15 CAP, 1.0UF ±10%, 100V, 1210, X7R 1
C16 CAP, 33UF, 100V, ELECT, FK, SMD 1
R1 RES, 1/16W, 0603, 1%, 562 OHMS 1
R2 RES, 1/16W, 0603, 1%, 22 OHMS 1
J1 HEADER RT> PLZ .1 CEN LK 5 POS 1
J3,J4 CONN, SMA, FLANGE 2
- PCB, RO4350B, Er = 3.48, h = 20 mil 1
-CGH55015 1
CGH55015-TB Demonstration Amplier Circuit
9CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH55015-TB Demonstration Amplier Circuit Schematic
CGH55015-TB Demonstration Amplier Circuit Outline
10 CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Typical Package S-Parameters for CGH55015
(Small Signal, VDS = 28 V, IDQ = 115 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.909 -125.16 17.56 107.52 0.026 20.86 0.330 -95.81
600 MHz 0.903 -134.72 15.15 101.24 0.027 15.25 0.318 -103.71
700 MHz 0.898 -142.24 13.28 95.96 0.027 10.66 0.312 -109.87
800 MHz 0.895 -148.34 11.79 91.38 0.027 6.76 0.309 -114.77
900 MHz 0.893 -153.43 10.58 87.30 0.028 3.37 0.310 -118.75
1.0 GHz 0.891 -157.78 9.59 83.58 0.028 0.34 0.312 -122.07
1.2 GHz 0.889 -164.93 8.06 76.89 0.028 -4.92 0.320 -127.35
1.4 GHz 0.888 -170.72 6.94 70.90 0.027 -9.46 0.332 -131.53
1.6 GHz 0.888 -175.64 6.08 65.34 0.027 -13.51 0.347 -135.09
1.8 GHz 0.888 -179.99 5.41 60.10 0.027 -17.20 0.362 -138.30
2.0 GHz 0.889 176.04 4.86 55.09 0.026 -20.60 0.378 -141.33
2.2 GHz 0.889 172.35 4.42 50.24 0.025 -23.76 0.394 -144.27
2.4 GHz 0.890 168.84 4.05 45.53 0.025 -26.70 0.410 -147.16
2.6 GHz 0.891 165.46 3.73 40.93 0.024 -29.44 0.426 -150.04
2.8 GHz 0.891 162.16 3.46 36.41 0.024 -31.97 0.441 -152.92
3.0 GHz 0.892 158.90 3.23 31.95 0.023 -34.32 0.455 -155.81
3.2 GHz 0.893 155.67 3.03 27.55 0.022 -36.45 0.469 -158.73
3.4 GHz 0.893 152.43 2.85 23.19 0.021 -38.38 0.482 -161.68
3.6 GHz 0.894 149.18 2.70 18.85 0.021 -40.07 0.494 -164.66
3.8 GHz 0.894 145.89 2.56 14.53 0.020 -41.52 0.506 -167.68
4.0 GHz 0.894 142.54 2.44 10.22 0.019 -42.71 0.516 -170.74
4.1 GHz 0.895 140.85 2.38 8.07 0.019 -43.19 0.521 -172.29
4.2 GHz 0.895 139.14 2.33 5.91 0.019 -43.59 0.526 -173.85
4.3 GHz 0.895 137.40 2.28 3.75 0.018 -43.92 0.530 -175.43
4.4 GHz 0.895 135.65 2.23 1.58 0.018 -44.16 0.535 -177.02
4.5 GHz 0.895 133.88 2.18 -0.59 0.018 -44.32 0.539 -178.62
4.6 GHz 0.895 132.08 2.14 -2.77 0.017 -44.38 0.543 179.75
4.7 GHz 0.895 130.26 2.10 -4.96 0.017 -44.35 0.546 178.11
4.8 GHz 0.895 128.41 2.06 -7.15 0.017 -44.23 0.550 176.45
4.9 GHz 0.895 126.53 2.03 -9.36 0.017 -44.02 0.553 174.77
5.0 GHz 0.895 124.63 1.99 -11.58 0.016 -43.71 0.556 173.07
5.1 GHz 0.895 122.69 1.96 -13.81 0.016 -43.30 0.559 171.35
5.2 GHz 0.895 120.72 1.93 -16.05 0.016 -42.81 0.561 169.60
5.3 GHz 0.895 118.73 1.90 -18.31 0.016 -42.22 0.564 167.83
5.4 GHz 0.895 116.70 1.87 -20.59 0.016 -41.56 0.566 166.04
5.5 GHz 0.895 114.63 1.84 -22.89 0.016 -40.83 0.568 164.21
5.6 GHz 0.895 112.53 1.81 -25.20 0.016 -40.05 0.570 162.36
5.7 GHz 0.895 110.39 1.79 -27.53 0.016 -39.22 0.572 160.47
5.8 GHz 0.895 108.22 1.77 -29.89 0.016 -38.35 0.574 158.55
5.9 GHz 0.895 106.00 1.74 -32.27 0.016 -37.48 0.575 156.60
6.0 GHz 0.895 103.75 1.72 -34.67 0.016 -36.62 0.576 154.61
Download this s-parameter le in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
11 CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Product Dimensions CGH55015F1 (Package Type — 440166)
Product Dimensions CGH55015P1 (Package Type — 440196)
12 CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639