MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 1.00.5 CR3AMZ 8 MAX TYPE NAME VOLTAGE CLASS 4 MAX 12 MIN 1.20.1 0.8 0.8 1.5 MIN 4.5 MAX 2.5 2.5 1.550.1 123 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 3 * IT (AV) ........................................................................ 0.4A * VDRM ....................................................................... 400V * IGT ..........................................................................30mA 0.5 1 TO-202 APPLICATION Automatic strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter Unit 8 VRRM Repetitive peak reverse voltage 400 V VRSM Non-repetitive peak reverse voltage 480 V VDRM Repetitive peak off-state voltage 400 V VDSM Non-repetitive peak off-state voltage 480 V Symbol Conditions Parameter IT (AV) Average on-state current Commercial frequency, sine half wave, 180 conduction, ITRM Repetitive peak on-state current 1 CM=700F with discharge current PGM Ratings 0.4 Unit A 200 A Peak gate power dissipation 0.5 W PG (AV) Average gate power dissipation 0.1 W VFGM Peak gate forward voltage 6 V IFGM Peak gate forward current 0.5 Tj Junction temperature Storage temperature Tstg -- Weight Typical value A -40 ~ +125 C -40 ~ +125 C 1.1 g 1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=25C, VRRM applied -- -- 0.1 mA IDRM Repetitive peak off-state current Tj=25C, VDRM applied -- -- 0.1 mA VTM On-state voltage Ta=25C, I TM=3A, Instantaneous value -- -- 2.0 V VGT Gate trigger voltage Tj=25C, VD =6V, RL=6 -- -- 1.5 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.1 -- -- V IGT Gate trigger current Tj=25C, VD =6V, RL=6 -- -- 30 mA Cc Commutating capacitor 2 CM=700F, VCM =350V, ITM=200A, L=25H, Ta=25C -- -- 2.2 F 2. Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR L 15k CC + CM - VCM CR3AMZ-8 10 IT 1k 10k 0.1 CM = 700F VCM = 350V ITM = 200A 470 0.047 L = 25H Ta = 25C CONDUCTION TIME : arbitarity MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 Ta = 25C 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 6 7 8 ON-STATE VOLTAGE (V) 9 10 GATE CHARACTERISTICS GATE VOLTAGE (V) ON-STATE CURRENT (A) PERFORMANCE CURVES 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 VFGM = 6V PGM = 0.5W VGT = 1.5V IGT = 30mA (Tj = 25C) VGD = 0.1V PG(AV) = 0.1W IFGM = 0.5A 10-2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 1.0 TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (V) 102 7 5 4 3 2 101 -20 -10 0 10 20 30 40 50 60 70 80 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -20 -10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) COMMUTATING CHARACTERISTICS 1000 tw 500 400 300 200 100 VCM = 350V Ta = 25C L = 25H SEE FIG.1 0 120 140 160 180 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR VS. PEAK ON-STATE CURRENT COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE VCM = 350V 2.4 CM = 700F 2.3 L = 25H Ta = 25C 2.2 SEE FIG.1 2.1 2.0 1.9 1.8 1.7 1.6 1.5 100 120 140 160 180 PEAK ON-STATE CURRENT (A) 200 COMMUTATING CAPACITOR (Ta = tC) COMMUTATING CAPACITOR (Ta = 25C) 100 (%) GATE CURRENT PULSE WIDTH (s) 2.5 COMMUTATING CAPACITOR (F) 600 CC=2.2F CC=2.3F 102 7 5 3 2 700 CC=2.1F 103 7 5 3 2 800 CC=2.0F t CC=1.9F 0 900 CC=1.8F IG MAIN CAPACITOR (F) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 TYPICAL EXAMPLE 0.9 CC=1.7F GATE TRIGGER CURRENT (Tj=tC) GATE TRIGGER CURRENT (Tj=25C) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 180 170 160 150 TYPICAL EXAMPLE 220 VCM = 350V ITM = 200A CM = 700F L = 25H 140 130 120 110 100 90 80 0 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 101 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, PEAK OFF-STATE CURRENT (A) 100 -60 -40 -20 0 20 40 60 80 100 120 140 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 200 180 TYPICAL EXAMPLE RGK = 1k 160 BREAKOVER VOLTAGE (T j = tC) BREAKOVER VOLTAGE (T j = 25C) 102 7 5 3 2 VD = 12V RGK = 1k 100 (%) 103 7 5 3 2 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE PEAK REVERSE CURRENT VS. JUNCTION TEMPERATURE VD = 400V RGK = 1k ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) PEAK REVERSE CURRENT (A) HOLDING CURRENT (mA) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VR = 400V RGK = 1k ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) Feb.1999