Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3AMZ
APPLICATION
Automatic strobe flasher
✽1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM.
Symbol
IT (AV)
ITRM
PGM
PG (AV)
VFGM
IFGM
Tj
Tstg
—
Parameter
Average on-state current
Repetitive peak on-state current ✽1
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction,
CM=700µF with discharge current
Typical value
Unit
A
A
W
W
V
A
°C
°C
g
Ratings
0.4
200
0.5
0.1
6
0.5
–40 ~ +125
–40 ~ +125
1.1
•IT (AV) ........................................................................0.4A
•V
DRM .......................................................................400V
•I
GT ..........................................................................30mA
Symbol
VRRM
VRSM
VDRM
VDSM
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class Unit
V
V
V
V
8
400
480
400
480
MAXIMUM RATINGS
TYPE NAME
VOLTAGE
CLASS
231
1.0±0.5
8 MAX
1.2±0.1
4 MAX
12 MIN
0.8
0.8
2.5 2.5
1.5 MIN
10 MAX
4.5 MAX
1.55±0.1
0.5
OUTLINE DRAWING
Dimensions
in mm
TO-202
2
1
3
1
2
3
CATHODE
ANODE
GATE
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
IRRM
IDRM
VTM
VGT
VGD
IGT
Cc
Test conditions
Tj=25°C, VRRM applied
Tj=25°C, VDRM applied
Ta=25°C, ITM=3A, Instantaneous value
Tj=25°C, VD=6V, RL=6Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=6Ω
CM=700µF, VCM=350V, ITM=200A, L=25 µH, Ta=25°C
Unit
mA
mA
V
V
V
mA
µF
Typ.
—
—
—
—
—
—
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Commutating capacitor ✽2
Min.
—
—
—
—
0.1
—
—
Max.
0.1
0.1
2.0
1.5
—
30
2.2
Limits
ELECTRICAL CHARACTERISTICS
✽2.Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM.
CC
1k
0.047µ
470Ω470Ω
10kΩ
L
IT
VCM CMCR3AMZ-8
10Ω
0.1µ
+
−
15kΩ
CM = 700µF
VCM = 350V
ITM = 200A
L = 25µH
Ta = 25°C
CONDUCTION TIME : arbitarity
Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR
1002 846 91735
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
a
= 25°C
10
–1
2310
0
5710
1
23 5710
2
23 5710
3
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
V
FGM
= 6V
V
GT
= 1.5V
I
GT
= 30mA
(T
j
= 25°C)
P
GM
= 0.5W
V
GD
= 0.1V I
FGM
= 0.5A
P
G(AV)
= 0.1W
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2.5
2.2
1.8
1.7
1.6
2.3
2.4
2.1
1.9
2.0
200100 120 180140 160
1.5
V
CM
= 350V
C
M
= 700µF
L = 25µH
T
a
= 25°C
SEE FIG.1
1000
700
300
200
100
800
900
600
400
500
0220120 140 200160 180
C
C
=1.7µF
C
C
=1.8µF
C
C
=1.9µF
C
C
=2.0µF
C
C
=2.1µF
C
C
=2.3µF
V
CM
= 350V T
a
= 25°C
L = 25µH SEE FIG.1
C
C
=2.2µF
180
150
110
100
90
160
170
140
120
130
1000 20 8040 60 9010 7030 50
80
V
CM
= 350V
I
TM
= 200A
C
M
= 700µF
L = 25µH
TYPICAL EXAMPLE
10
2
2310
0
5710
1
23 5710
2
23 5710
3
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
I
G
tw
t0
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–20–100 1020304050607080
10
2
7
5
3
2
4
4
TYPICAL EXAMPLE 1.0
0.7
0.3
0.2
0.1
0.8
0.9
0.6
0.4
0.5
080–20 0 30507060–10 10 20 40
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j=
t°C)
GATE TRIGGER CURRENT (T
j=
25°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
COMMUTATING CHARACTERISTICS
MAIN CAPACITOR (µF)
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
PEAK ON-STATE CURRENT
COMMUTATING CAPACITOR (µF)
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
100 (%)
COMMUTATING CAPACITOR (Ta = t°C)
COMMUTATING CAPACITOR (Ta = 25°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
14040–40–60 –20 0 20 60 80 100120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
VD = 12V
RGK = 1kΩ
14040–40–60 –20 0 20 60 80 100120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
VD = 400V
RGK = 1kΩ
14040–40–60 –20 0 20 60 80 100120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
VR = 400V
RGK = 1kΩ
200
140
60
40
20
160
180
120
80
100
0140–60 –20 40 80 120100–40 0 20 60
RGK = 1kΩTYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25 °C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
PEAK OFF-STATE CURRENT VS.
JUNCTION TEMPERATURE
PEAK OFF-STATE CURRENT (µA)
JUNCTION TEMPERATURE (°C)
PEAK REVERSE CURRENT VS.
JUNCTION TEMPERATURE
PEAK REVERSE CURRENT (µA)
JUNCTION TEMPERATURE (°C)
