MICROELECTRONICS JOE D MM 7929237 0031736 2 ky P2515 SGS-THOMSON S$ G S-THOMSON BTB 15B TRIACS GLASS P ASSIVATED CHIP = lat SPECIFIED IN FOUR QUADRANTS Ai A *G __ DESCRIPTION Piast. New range suited for applications such as phase control and static switching. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT7AMs) RMS on-state Current (360 conduction angle) | Tc = 90 C 15 A ltsm Non Repetitive Surge Peak on-state Current t=8.3 ms 157 A (T, initial = 25 C - Half sine wave) t=10ms 150 Pt I?t Value for Fusing t=i0ms 112.5 As di/dt Critical Rate of Rise of on-state Current (1) Repetitive 10 A/us F = 50 Hz Non 50 Repetitive Tsig Storage and Operating Junction Temperature Range 40 to 150 C T, 40 to 125 cc BTB 15- Symbol Parameter Unit 200B | 400B | 600B | 700B | 800B Vorm Repetitive Peak off-state Voltage (2) 200 400 600 700 800 Vv ()le=750 mA dig/dt = 1 Alps (2) T, = 125 C. THERMAL RESISTANCES Symbol Parameter Value Unit Rth q-a) | Junction to Ambient 60 CiW Riz q-cy) DC} Junction to Case for DC 2.66 C/W Rth q-c) AC | Junction to Case for 360 Conduction Angle (F = 50 Hz) 2 C/W February 1989 14 455BTB 15 B 30E D Mm 7929237 0031737 4 6 S=THOMSON ___. GATE CHARACTERISTICS (maximum values) Poem = 40 W (tp = 10 us) Iam = 4 A (tp = 10 ls) ees Pajay=1W Vem = 16 V (tp = 10 us) T-Aas-IiS- ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrants| Min. Typ. Max. Unit lar Tj = 25 Vo =12V Ry =33 2 I-III 50 mA Pulse Duration > 20 ps IV 75 Vet Tj = 25C Vp = 12 V Rit =33 9 I-H-HI-IV 15 Vv Pulse Duration > 20 us Veo Tj = 125 C Vp = Vor RL =3.3kQ |} -IFILIV | 02 Vv lH" Tj = 25C ly =100 mA Gate Open 50 mA. It Tj = 26C Vp #12 V Ie = 150 mA I-III-IV 50 mA Pulse Duration > 20 pis II 100 - Vim* Tj = 25C Imm =21A tp =10 ms 15 Vv Ipam* Vorm Specified Tj = 25C 0.01 mA - Ty = 125 C 2 dv/dt* Tj = 125 C Gate Open 250 500 Vis Linear Slope up to Vp = 67 % Vprm (dv/dt);* | Te = 90C Vp = Vora Ir =21A 10 Vius (di/dt), = 6.7 A/ms tat Tj = 25C Vp = VorM Ip =21A LI-It-IV 2 us I@ = 500 mA dige/dt = 3.5 A/us * For either polarity of electrode Az voltage with reference to electrode Ai. PACKAGE MECHANICAL DATA TO 220 AB Plastic +0,40 +0,20 @ 3,60,05 0,55 2,8 -0,26 10,3 0,3 6,3-0,45 j ' KR 1 ao . + 1 | x : 2 eo || 0/8 2s . MIE c]x + ~ L = 0,5 0,15 S} Wl Il | ele np |: nin co Ih als o . H | | 2,54 0,25 2,54 0,25 2,4 +03 123 Triac =:123=A]A2G Cooling method : by conduction (method C) Marking : type number Weight : 2 g. 2/4 G7 SGs-THOMSON Jf KrczosiecTaoNes 45630E D MM 7929237 0031738 b ~=(di/dt), limitation =180 =120 a = 90 ~ = 80 = go? P (Ww) 0 Iy (A) 0 5 40 45 Fig.4 - Maximum mean power dissipation versus AMS on-state current (F = 60 Hz). ob BTB 15B T-AS AIS P{W) T {ec} Rth = 105 115 T (c) 10 30 50 70 90 440 130 4125 Fig.2 - Correlation between maximum mean power dissipation and maximum allowable temperatures (Tanb 89d Toage) for different thermal resistances heatsink + contact. I (a) (C/W) 107 th j-c th j-a7 77 10 i (C) t (s) 40-4 0 25 50 74 100 125 4073 = 4972 4071 i 40 40 403 Fig.d AMS on-state current versus case Fig.4 - Thermal transient impedance junc temperature. fion to case and junction to ambient Icr Ty] Tylts) versus pulse duration. (T;=25C] * Itsy (A) 2.0 450 Ty initial = 25 C 400 1.5 50 1.0 1} (C) 0 Number of cycles ~40 20 0 25 4 40 402 403 Fig.5 ~ Relative variation of gate trigger Fig.@ Non repetitive surge peak on-state current and holding current versus current versus number of cycles. junction temperature. K57 8&S:THOMsoN 34 RICRCELECTROINCS 457 S & SaTHOMSONAl4 458 BTB 15 B _30E D Mmm 7929237 0031739 8 S G S-THOMSON SEGRE 4 List (A), Tt (Aes) . 3 tm T= AGA 1S 40 BT; =125C Vto=-94 Vv r= .023.0 Tsinitial= 25 a 1o Ww Ty initial 25C = = = 125C so 10 t (ms) 10 4 2 5 40 Vim (Vv) 0 4 2 3 4 5 Fig./ - Non repetitive surge peak Fig.8 - On-state characteristic on~state current for a sinusoidal {maximum values) . pulse with width: t< 10ms, and corresponding value of Tet. ky SGS-THOMSON MICROELECTRONICS