2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) -10max A V IEBO VEB=-6V -10max A -6 V V(BR)CEO -8 A hFE -120min IC=-50mA V 50min VCE=-4V, IC=-3A A VCE(sat) IC=-3A, IB=-0.3A -1.5max V 80(Tc=25C) W fT VCE=-12V, IE=0.5A 20typ MHz Tj 150 C COB VCB=-10V, f=1MHz 300typ pF -55 to +150 C hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min -3 PC RL () IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) -40 10 -4 -10 5 -0.4 0.4 0.14typ 1.40typ 0.21typ V CE ( s a t ) - I B Characteristics (Typical) I B =-10mA 0 0 -1 -2 -3 -4 -4A 0 (V C E =-4V) 300 100 50 -1 -5 125C Transient Thermal Resistance DC Curr ent Gain h FE Typ -0.5 -0.5 25C 100 -30C 50 30 -0.02 -8 -0.1 -0.5 f T - I E Characteristics (Typical) -1.5 -1 -5 -8 3 1 0.5 0.3 1 10 100 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) -1.0 j-a - t Characteristics h FE - I C Temperature Characteristics (Typical) 200 -0.1 0 Base-Emittor Voltage V B E (V) (V C E =-4V) 30 -0.02 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Base Current I B (A) h FE - I C Characteristics (Typical) mp) -2A 0 Collector-Emitter Voltage V C E (V) D C Cur r ent Gai n h F E -2 I C =-8A e Te -1 (Cas -2 -4 -30C -25mA -6 mp) -50mA -4 -2 e Te -7 5m A Cas mA C ( -100 -6 (V CE =-4V) 125 5 1.4 E -8 Collector Current I C (A) -1 5.450.1 C I C - V BE Temperature Characteristics (Typical) j - a ( C/W) 0 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) -3 -2 A 0m 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Type No. b. Lot No. -3 A 2 3 B VCC (V) 0m o3.20.1 5.450.1 I C - V CE Characteristics (Typical) 2.00.1 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) -8 4.80.2 b IB Tstg a mp) IC e Te VEBO (Cas -120 15.60.4 9.6 25C VCEO 19.90.3 V 1.8 VCB=-120V -120 5.00.2 ICBO VCBO 2.0 Unit Symbol 4.0 2SA1694 Unit External Dimensions MT-100(TO3P) (Ta=25C) Conditions 2SA1694 4.0max Electrical Characteristics Absolute maximum ratings (Ta=25C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 80 -20 -5 DC s he 40 at si nk Without Heatsink Natural Cooling ite -0.5 fin -1 60 In 10 100ms ith Co lle ctor Cu rren t I C (A) Typ 20 -10 m W Cut- off F req uency f T (MH Z ) 10 Maxim um Power Dissip ation P C (W) 30 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 28 5 8 -0.1 -5 -10 -50 -100 Collector-Emitter Voltage V C E (V) -200 3.5 0 0 25 50 75 100 12 5 Ambient Temperature Ta(C) 150