HCC/HCF40109B
QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER
DESCRIPTION
.INDEPENDENCE OF POWER SUPPLY SE-
QUENCE CONSIDERATIONS – VCC CAN EX-
CEED VDD, INPUT SIGNALS CAN EXCEED
BOTHVCC AND VDD
.UP AND DOWN LEVEL-SHIFTING CAPA-
BILITY
.THREE-STATE OUTPUTS WITH SEPARATE
ENABLECONTROLS
.STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
.QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.5V, 10V, AND 15VPARAMETRIC RATINGS
.INPUT CURRENTOF 100nA AT 18V AND 25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENT CURRENT
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVE STANDARD N°. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
June 1989
The HCC40109B (extended temperature range)
and HCF40109B (intermediate temperature range)
are monolithic integrated circuits, available in 16-
lead dual in-line plastic or ceramic package and
plastic micropackage. The HCC/HCF40109B con-
tains four low-to-high-voltage level-shifting circuits.
Each circuitwill shift a low-voltage digital-logic input
signal(A, B, C, D) with logical 1 =VCC and logical 0
=V
SS toa higher-voltage output signal (E, F, G, H)
with logical 1 = VDD and logical 0 = VSS. The
HCC/HCF40109B, unlike other low-to-high level-
shiftingcircuits,does notrequire thepresence ofthe
high-voltage supply (VDD) before the application of
eitherthe low-voltage supply (VCC)or the input sig-
nals. There are no restrictions on the sequence of
application of VDD,V
CC, or the input signals. In ad-
dition, there are no restrictions on the relative mag-
nitudesodthesupplyvoltagesorinput signals within
the device maximum ratings ;VCC mayexceedVDD,
and input signals may exceed VCC, andVDD. When
operated in the mode VCC VDD, the
HCC/HCF40109B, will operate as a high-to-low
level-shifter. The HCC/HCF 40109B also features
individual three-state output capability. A low level
on any of the separately enabled three-state output
EY
(Plastic Package) F
(Ceramic Frit SealPackage)
C1
(Plastic ChipCarrier)
ORDER CODES :
HCC40109BF HCF40109BM1
HCF40109BEY HCF40109BC1
PIN CONNECTIONS
controls produces a high-impedance state in the
corresponding output.
C1
(Micro package)
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FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDD* Supply Voltage :HCC Types
HCF Types – 0.5 to + 20
– 0.5 to + 18 V
V
ViInput Voltage – 0.5 to VDD + 0.5 V
IIDC Input Current (any one input) ±10 mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package-temperature Range
200
100
mW
mW
Top Operating Temperature : HCC Types
HCF Types –55to+125
–40to+85 °C
°C
T
stg Storage Temperature – 65 to + 150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
VDD Supply Voltage : HCC Types
HCF Types 3to18
3to15 V
V
V
IInput Voltage 0 to VDD V
Top Operating Temperature : HCC Types
HCF Types – 55 to + 125
–40to+85 °C
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage are with respect to VSS (GND).
LOGIC DIAGRAM
Inputs Outputs
Mode A, B, C, D Enable
A,B,C,D E,F,G,H
Low to High
Level Shift 01 0
11 1
X0Z
LOGIC 0 = LOW (VSS) X = Don’t Care.
Z = High Impedance.
LOGIC 1 = VCC at INPUTS and VDD at OUTPUTS.
1 of4 units
TRUTH TABLE
HCC/HCF40109B
2/12
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions Value
TLow
*25°CT
High*
Symbol Parameter VI
(V) VO
(V) |IO|
(µA) VCC
(V) VDD
(V) Min Max. Min. Typ. Max. Min. Max.
Unit
ILQuiescent
Current HCC
Types
0/ 5 5 1 0.02 1 30
0/10 10 2 0.02 2 60
0/15 15 4 0.02 4 120
µA
0/20 20 20 0.04 20 600
HCF
Types
0/ 5 5 4 0.02 4 30
0/10 10 8 0.02 8 60
0/15 15 16 0.02 16 120
VOH Output High
Voltage 0/ 5 < 1 5 4.95 4.95 4.95
V
0/10 < 1 10 9.95 9.95 9.95
0/15 < 1 15 14.95 14.95 14.95
VOL Output Low
Voltage 5/0 < 1 5 0.05 0.05 0.05
V
10/0 < 1 10 0.05 0.05 0.05
15/0 < 1 15 0.05 0.05 0.05
VIH Input High Voltage 1/9 < 1 5 10 3.5 3.5 3.5 V
1.5/13.5 < 1 10 15 7 7 7
VIL Input Low Voltage 1/9 < 1 5 10 1.5 1.5 1.5 V
1.5/13.5 < 1 10 15 3 3 3
IOH Output
Drive
Current HCC
Types
0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15
mA
0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36
0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9
0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4
HCF
Types
0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1
0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36
0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9
0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4
IOL Output
Sink
Current HCC
Types
0/ 5 0.4 5 0.64 0.51 1 0.36
mA
0/10 0.5 10 1.6 1.3 2.6 0.9
0/15 1.5 15 4.2 3.4 6.8 2.4
HCF
Types
0/ 5 0.4 5 0.52 0.44 1 0.36
0/10 0.5 10 1.3 1.1 2.6 0.9
0/15 1.5 15 3.6 3.0 6.8 2.4
IIH,I
IL Input
Leakage
Current
HCC
Types 0/18 18 ±0.1 ±10-5 ±0.1 ±1µAAny Input
HCF
Types 0/15 15 ±0.3 ±10-5 ±0.3 ±1
*T
Low =–55°C for HCC device : – 40°C for HCF device.
*T
High = + 125°C for HCC device : + 85°C for HCF device.
The NoiseMargin for both ”1” and”0” levelis : 1V min.with VDD =5V,2V min.with VDD = 10V,2.5V min. withVDD = 15V.
** Forcedoutput disabled.
HCC/HCF40109B
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DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25°C, CL= 50pF, RL= 200kΩ,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns)
Test Conditions Value
Symbol Parameter Shifting Mode VCC (V) VDD (V) Min. Typ. Max. Unit
tPHL,
tPLH
Propagation Delay Time
(data input to output)
High to Low Level L-H 5 10 300 600
ns
5 15 220 440
10 15 180 360
H-L 10 5 850 1600
15 5 850 1600
15 10 290 580
Low to High Level L-H 5 10 130 260
ns
5 15 120 240
10 15 70 140
H-L 10 5 230 460
15 5 230 460
15 10 80 160
tPHZ 3-State Disable Delay Time
Output High to High Impedance L-H 5 10 60 120
ns
5 15 50 100
10 15 35 70
H-L 10 5 120 240
15 5 120 240
15 10 40 80
tPZH High Impedance to Output High L-H 5 10 320 640
ns
5 15 230 460
10 15 180 360
H-L 10 5 800 1500
15 5 800 1500
15 10 280 560
tPLZ Output Low to High Impedance L-H 5 10 370 740
ns
5 15 300 600
10 15 250 500
H-L 10 5 850 1600
15 5 850 1600
15 10 350 700
STATIC ELECTRICAL CHARACTERISTICS(continued)
Test Conditions Value
VIVOIOVCC VDD TLow
*25°CT
High*
Symbol Parameter (V) (V) (V) (V) (V) Min. Max. Min. Typ. Max. Min. Max.
Unit
IOH,
IOL** 3-State
Output
Leakage
Current
HCC
Types 0/18 0/18 18 ±0.4 ±10-4 ±0.4 ±12 µA
HCF
Types 0/15 0/15 15 ±1.0 ±10-4 ±1.0 ±7.5
CIInput Capacitance Any Input 5 7.5 pF
*T
Low =–55°C for HCC device : – 40°C for HCF device.
*T
High = + 125°C for HCC device : + 85°C for HCF device.
The NoiseMargin for both ”1” and”0” levelis : 1V min.with VDD =5V,2V min.with VDD = 10V,2.5V min. withVDD = 15V.
** Forcedoutput disabled.
HCC/HCF40109B
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DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions Value
Symbol Parameter Shifting Mode VCC (V) VDD (V) Min. Typ. Max. Unit
tPZL High Impedance to Output Low L-H 5 10 100 200
ns
5 15 80 160
10 15 40 80
H-L 10 5 120 240
15 5 120 240
15 10 40 80
tTHL,
tTLH
Transition Time L-H 5 10 50 100
ns
515 4080
10 15 40 80
H-L 10 5 100 200
15 5 100 200
15 10 50 100
Output Low (sink) Current Characteristics. Output High (source) Current Characteristics.
Typical Transition Timevs. Load Capacitance. Typical High-to-low Propagation DelayTime vs.
Load Capacitance.
HCC/HCF40109B
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Typical Input Switching vs.High-level SupplyVolt-
age.
Typical Low-to-high Propagation Delay Time vs.
Load Capacitance.
TEST CIRCUITS
Output Enable Delay Times Test Circuit and Waveforms.
High-level Supply Voltage vs. Low-level Supply
Voltage. Typical Dynamic Power Dissipation vs. Input Fre-
quency.
HCC/HCF40109B
6/12
Input Leakage Current. Dynamic Power Dissipation.
TEST CIRCUITS (continued)
Quiescent Device Current. Input Voltage.
HCC/HCF40109B
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Plastic DIP16 (0.25) MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
P001C
HCC/HCF40109B
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Ceramic DIP16/1 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 20 0.787
B 7 0.276
D 3.3 0.130
E 0.38 0.015
e3 17.78 0.700
F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060
L 0.22 0.31 0.009 0.012
M 0.51 1.27 0.020 0.050
N 10.3 0.406
P 7.8 8.05 0.307 0.317
Q 5.08 0.200
P053D
HCC/HCF40109B
9/12
SO16 (Narrow) MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45°(typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S8°(max.)
P013H
HCC/HCF40109B
10/12
PLCC20 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 9.78 10.03 0.385 0.395
B 8.89 9.04 0.350 0.356
D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022
E 7.37 8.38 0.290 0.330
e 1.27 0.050
e3 5.08 0.200
F 0.38 0.015
G 0.101 0.004
M 1.27 0.050
M1 1.14 0.045
P027A
HCC/HCF40109B
11/12
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability forthe
consequences of use of such information nor forany infringementof patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin life supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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HCC/HCF40109B
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