Semiconductor Group 1 07/96
BUZ 11 S2
Not for new design
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on)Package Ordering Code
BUZ 11 S2 60 V 30 A 0.04 ΩTO-220 AB C67078-S1301-A5
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C = 29 °C
I
D 30 A
Pulsed drain current
T
C = 25 °C
I
Dpuls 120
Avalanche current,limited by
T
jmax
I
AR 30
Avalanche energy,periodic limited by
T
jmax
E
AR 1.9 mJ
Avalanche energy, single pulse
I
D = 30 A,
V
DD = 25 V,
R
GS = 25 Ω
L
= 15.6 µH,
T
j = 25 °C
E
AS
14
Gate source voltage
V
GS ± 20 V
Power dissipation
T
C = 25 °C
P
tot 75 W
Operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC ≤ 1.67 K/W
Thermal resistance, chip to ambient
R
thJA ≤ 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 2 07/96
BUZ 11 S2
Not for new design
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 °C
V
(BR)DSS 60 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 2.1 3 4
Zero gate voltage drain current
V
DS = 60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 60 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
- 10
0.1 100
1 µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-resistance
V
GS = 10 V,
I
D = 19 A
R
DS(on) - 0.03 0.04 Ω
Semiconductor Group 3 07/96
BUZ 11 S2
Not for new design
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = 19 A
g
fs 10 17 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 1000 1350 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 450 680
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 165 250
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50 Ω
t
d(on)
- 15 25
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50 Ω
t
r
- 55 85
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50 Ω
t
d(off)
- 120 160
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 3 A
R
GS = 50 Ω
t
f
- 80 110
Semiconductor Group 4 07/96
BUZ 11 S2
Not for new design
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C = 25 °C
I
S- - 30 A
Inverse diode direct current,pulsed
T
C = 25 °C
I
SM - - 120
Inverse diode forward voltage
V
GS = 0 V,
I
F = 60 A
V
SD - 1.6 1.8 V
Reverse recovery time
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 80 - ns
Reverse recovery charge
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 0.1 - µC
5 07/96
Semiconductor Group
BUZ 11 S2
Not for new design
Drain current
I
D = ƒ(
T
C)
parameter:
V
GS ≥ 10 V
020 40 60 80 100 120 °C 160
T
C
0
4
8
12
16
20
24
A
32
I
D
Power dissipation
P
tot = ƒ(
T
C)
020 40 60 80 100 120 °C 160
T
C
0
10
20
30
40
50
60
W
80
P
tot
Safe operating area
I
D = ƒ(
V
DS)
parameter:
D
= 0.01
, T
C = 25°C
0
10
1
10
2
10
3
10
A
I
D
10 0 10 1 10 2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
10 µs
1 µs
100 ns
t
p = 45.0ns
Transient thermal impedance
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 07/96
BUZ 11 S2
Not for new design
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
D
V
GS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 75W
l 20.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
V
GS
010 20 30 40 A 60
I
D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
Ω
0.13
R
DS (on)
V
GS [V] =
a
4.0
V
GS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
I
D =
f
(
V
GS)
parameter:
t
p = 80 µs
V
DS≥2 x
I
D x
R
DS(on)max
012345678V10
V
GS
0
5
10
15
20
25
30
35
40
45
50
55
A
65
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS≥2 x
I
D
x R
DS(on)max
010 20 30 40 A 60
I
D
0
2
4
6
8
10
12
14
16
18
20
22
S
26
g
fs
7 07/96
Semiconductor Group
BUZ 11 S2
Not for new design
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = 19 A,
V
GS = 10 V
-60 -20 20 60 100 °C 160
T
j
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
Ω
0.13
R
DS (on)
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS = 0V,
f
= 1MHz
0 5 10 15 20 25 30 V 40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
0
10
1
10
2
10
3
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Semiconductor Group 8 07/96
BUZ 11 S2
Not for new design
Avalanche energy
E
AS = ƒ(
T
j)
parameter:
I
D = 30 A,
V
DD = 25 V
R
GS = 25 Ω,
L
= 15.6 µ H
20 40 60 80 100 120 °C 160
T
j
0
1
2
3
4
5
6
7
8
9
10
11
12
mJ
15
E
AS
Typ. gate charge
V
GS = ƒ(
Q
Gate)
parameter:
I
D puls = 56 A
0 5 10 15 20 25 30 35 40 nC 50
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
54
56
58
60
62
64
66
68
V
71
V
(BR)DSS
Semiconductor Group 907/96
BUZ 11 S2
Not for new design
Package Outlines
TO-220 AB
Dimension in mm
