CPH6604
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V dri ve.
Ordering number : ENN7147
Package Dimensions
unit : mm
2202
[CPH6604]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID2.0 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 8.0 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm
2
✕0.8mm)1unit
0.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=1A 1.3 1.8 S
RDS(on)1 ID=1A, VGS=10V 115 150 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=0.5A, VGS=4V 190 270 mΩ
Marking : FP Continued on next page.
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
0.05
0.9
0.7 0.2 1.6 0.60.6
0.95
123
654
2.8
0.2
2.9 0.15
0.4
CPH6604 N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
CPH6604/D
CPH6604
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=10V, f=1MHz 120 pF
Output Capacitance Coss VDS=10V, f=1MHz 30 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise T ime trSee specified Test Circuit. 4 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns
Fall T ime tfSee specified Test Circuit. 5 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.0A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.0A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.0A 0.5 nC
Diode Forward Voltage VSD IS=2.0A, VGS=0 0.87 1.2 V
Electrical Connection Switching Time Test Circuit
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1A
RL=15Ω
VDD=15V
VOUT
CPH6604
VIN
10V
0V
VIN
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
250
200
150
100
50
300
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.2 0.4 0.6 0.8 1.0
IT02698
50
100
150
200
250
300
350
400
0012345678910
Ta=25°C
IT02700 IT02701
ID=0.5A, VGS=4V
ID=1.0A, VGS=10V
--60 --40 --20 0 20 40 60 80 100 120 160140
0
2.5
2.0
1.5
1.0
0.5
3.0
VDS=10V
--25°C
Ta=75°C
IT02699
25°C
1A
ID=0.5A
VGS=3V
10V
4V
5V
8V6V
654
123
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
CPH6604
Rev.0 I Page 3 of 4 I www.onsemi.com
70.1
35 7
1.0
23 5 723 5 051015 20 25 30
1.0
2
7
5
3
10
7
5
3
2
100
0.01
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
1000
100
7
5
3
2
7
5
3
2
f=1MHz
Ciss
Coss
Crss
IT02705
td(off)
IT02704
td(on)
tr
tf
VDD=15V
VGS=10V
IT02703
VGS=0
--25°C
25°C
Ta=75°C
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Amibient Tamperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
yfs -- ID
Diode Forw ard Voltage, VSD -- V
Forward Current, IF -- A
IF -- VSD
0.1
1.0
2
3
5
7
0.01
2
3
5
7
10
2
3
5
7
IT04065
0.1 23 57
1.0 23 57
10 23 5
<10µs
1
00µs
ID=2A
DC operation
IDP=8A
1ms
10ms
100ms
0
0
2
4
6
8
4.54.02.0 2.5 3.0 3.50.5 1.0 1.5
10
IT04064
IT04063
0.01
0.1 0.1 1.0 10
23 57 23 57 23 57
10
1.0
7
5
3
2
7
5
3
2
VDS=10V
75°C
25°C
Ta= --25°C
VDS=10V
ID=2A
0.2
0.4
0.6
0.8
0.9
1.0
0020406080100120 140 160
IT04066
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
CPH6604
Rev.0 I Page 4 of 4 I www.onsemi.com CPH6604/D
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