2N6071, A, B
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
TO-126 CASE
Central
Semiconductor Corp.
TM
R0 (27-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TJ=25°C unless otherwise noted) 2N6071 2N6073 2N6075
2N6071A 2N6073A 2N6075A
SYMBOL 2N6071B 2N6073B 2N6075B UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 V
RMS On-State Current (TC=85°C) IT(RMS) 4.0 A
Peak One Cycle Surge (60Hz, TJ=110°C) ITSM 30 A
I2t Value for Fusing (t=8.3ms) I2t 3.7 A2s
Peak Gate Power (TC=85°C) PGM 10 W
Average Gate Power (t=8.3ms, TC=85°C) PG(AV) 0.5 W
Peak Gate Voltage (TC=85°C) VGM 5.0 V
Storage Temperature Tstg -40 to +150 °C
Junction Temperature TJ-40 to +110 °C
Thermal Resistance ΘJC 3.5 °C/W
Thermal Resistance ΘJA 75 °C/W
Maximum Lead Temperature TL 260 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
ASeries B Series
SYMBOL TEST CONDITIONS TYP MAX TYP MAX TYP MAX UNITS
IDRM, IRRM VD=Rated VDRM, VRRM, TJ=25°C 10 10 10 µA
IDRM, IRRM VD=Rated VDRM, VRRM, TJ=110°C 2.0 2.0 2.0 mA
IGT VD=12V, RL=100Ω, QUAD I, TJ=25°C 30 5.0 3.0 mA
IGT VD=12V, RL=100Ω, QUAD II, TJ=25°C - 5.0 3.0 mA
IGT VD=12V, RL=100Ω, QUAD III, TJ=25°C 30 5.0 3.0 mA
IGT VD=12V, RL=100Ω, QUAD IV, TJ=25°C - 10 5.0 mA
IGT VD=12V, RL=100Ω, QUAD I, TJ= -40°C 60 20 15 mA
IGT VD=12V, RL=100Ω, QUAD II, TJ= -40°C - 20 15 mA
IGT VD=12V, RL=100Ω, QUAD III, TJ= -40°C 60 20 15 mA
IGT VD=12V, RL=100Ω, QUAD IV, TJ= -40°C - 30 20 mA
IHVD=12V, IT=1.0A, TJ=25°C 30 15 15 mA
IHVD=12V, IT=1.0A, TJ= -40°C 70 30 30 mA
VGT VD=12V, RL=100Ω, TJ=25°C, QUAD I, II, III, IV 2.0 2.0 2.0 V
VGT VD=12V, RL=100Ω, TJ= -40°C, QUAD I, II, III, IV 2.5 2.5 2.5 V
VTM ITM=6.0A 2.0 2.0 2.0 V
ton ITM=14A, IGT=100mA 1.5 1.5 1.5 µs
dv/dt VD= Rated VDRM, ITM=5.7A, TJ=85°C 5.0 5.0 5.0 V/µs