CREAT BY ART
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High Surge capability
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol Unit
VRRM V
VRMS V
VDC V
dV/dt V/uS
RθJC OC/W
TJOC
TSTG OC
Note2: Thermal Resistance from Junction to Case Per Leg
VF
0.85
0.75
0.95
0.85
V
Maximum Reverse Current
TA=25 ℃
TA=125 ℃
IR
0.1
5
mA
mA
IF(AV) 20 A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method) IFSM 150 A
Marking Diagram
Dimensions in inches and (millimeters)
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed: 260℃/
10 seconds at terminals
Green compound with suffix "G" on packing
code & prefix "G" on datecode
WW = Work Week
Type Number
Case: JEDEC I2PAK molded plastic
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Maximum Ratings and Electrical Characteristics
MBRI20100CT = Specific Device Code Mounting position: Any
G = Green compound Weight: 1.41 grams
MBRI20100CT
I2PAK
Version:B11
Y = Year
100
20.0AMPS Schottk
Barrier Rectifie
Operating Temperature Range
Storage Temperature Range
2
MBRI20100CT
100
70
Voltage rate of change (Rated VR)
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
-65 to + 175
10,000
-65 to + 150
Guarding for over voltage protection
Features
Maximum Thermal Resistance Per Leg (Note 2)
Mechanical Data
Maximum DC blocking voltage
Maximum RMS Voltage
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
@Tc = 130℃(Total Device)
Maximum Instantaneous Forward Voltage at (Note 1)
IF = 10A, TA=25℃
IF = 10A, TA=125℃
IF = 20A, TA=25℃
IF = 20A, TA=125℃
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE