Parameter Test Conditions Min. Typ. Max. Unit
D1024UK
Document Number 3037
Issue 3
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70
1
1
17
0.8
13
50
20:1
60
30
2.5
VGS = 0 ID= 100mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 1A
PO= 40W
VDS = 28V IDQ = 0.4A
f = 400MHz
VDS = 28V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
V
mA
μA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS Common Source Power Gain
ηDrain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 1.75°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤2%
TOTAL DEVICE
PER SIDE
PER SIDE