RECTIFIER DIODE AR1109
Repetitive voltage up to 4400 V
Mean forward current 1000 A
Surge current 10.3 kA
FINAL SPECIFICATION
nov 02 - ISSUE : 05
Symbol Characteristic Conditions Tj
[°C] Value Unit
BLOCKING
VRRM Repetitive peak reverse voltage 150 4400 V
VRSM Non-repetitive peak reverse voltage 150 4500 V
IRRM Repetitive peak reverse current V=VRRM 150 50 mA
CONDUCTING
IF (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 1000 A
IF (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 905 A
IFSM Surge forward current Sine wave, 10 ms 150 10.3 kA
I² t I² t
without reverse voltage
530 x 1E3 A²s
VFM Forward voltage Forward current = 1800 A 25 1.80 V
VF(TO) Threshold voltage 150 0.89 V
rFForward slope resistance 150 0.675 mohm
SWITCHING
t rr Reverse recovery time µs
Q rr Reverse recovery charge 150 µC
I rr Peak reverse recovery current A
MOUNTING
Rth(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 37 °C/kW
Rth(c-h) Thermal impedance Case to heatsink, double side cooled 7 °C/kW
TjOperating junction temperature -30 / 150 °C
F Mounting force 11.8 / 13.2 kN
Mass 300 g
ORDERING INFORMATION : AR1109 S 44
standard specification VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
AR1109 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180°
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200 1400 1600
IF(AV) [A]
PF(AV) [W]
60°
30°
90°
120°
DC
90°
60°
30°
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400 1600
IF(AV) [A]
Th [°C]
180°120°
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1109 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SINE WAVE
120°
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200 1400 1600
IF(AV) [A]
PF(AV) [W]
180°
60°
30°
90°
60°
30°
50
70
90
110
130
150
170
0 200 400 600 800 1000 1200 1400 1600
IF(AV) [A]
Th [°C]
120°
180°
90°
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1109 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 °C
0
500
1000
1500
2000
2500
3000
3500
0.6 1.1 1.6 2.1 2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0.001 0.01 0.1 1 10 100
t[s]
Zth j-h [°C/kW]
SURGE CHARACTERISTIC
Tj = 150 °C
0
2
4
6
8
10
12
1 10 100
n° cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrpora tion
POSEICO
