General Description Features MagnaChip's IGBT Module 7DM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are ideally suited for IH, High BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10us at TC=100 Isolation Type Package Applications Power inverters, Motors drives and other Induction Heating, Motor Drives, High Power Inverters Welding Machine, UPS applications where switching losses are significant portion of the total losses. Equivalent Circuit 7DM-3 E301932 Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Symbol Rating Unit Collector-Emitter Voltage VCES 1200 V Gate- Voltage VGES 20 V 150 A 100 A ICM 200 A IF 100 A IFM 200 A PD 780 W TSC 10 us Tj -55~150 o Tstg -55~125 o Viso 2500 V - 4 N.m o TC=25 C Continuous Collector Current o IC TC=80 C Pulsed Collector Current (1) Diode Continuous Forward Current o TC=80 C Diode Maximum Forward Current Power Dissipation o TC=25 C Short Circuit Withstand Time Operating Junction Temperature Storage Temperature Range Isolation Voltage AC 1minute Mounting screw Torque : M6 C C Note : (1) Repetitive rating : Pulse width limited by max. junction temperature March 2013.Version 2.0 1 MagnaChip Semiconductor Ltd. MPMD100B120RH NPT & Rugged Type 1200V IGBT Module MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Characteristics Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0V 1200 - - Gate Threshold Voltage VGE(th) VCE = VGE, IC = 2mA 4.5 - 7.5 Collector Cut-Off Current ICES VCE = 1200V, VGE = 0V - - 1 mA Gate Leakage Current IGES VGE = 20V, VCE = 0V - - 250 nA TC=25 - 2.7 3.2 V TC=100 - 3.3 - V - 400 - - 44 - V Collector-Emitter saturation voltage VCE(sat) VGE = 15V, IC=100A Dynamic Characteristics Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 236 - Input Capacitance Cies - 4760 - Output Capacitance Coes - 518 - Reverse Transfer Capacitance Cres - 175 -- Turn-On Delay Time td(on) - 135 - tr - 60 - VCC = 600V, IC =100A, - 450 - VGE =15V, - 70 - RG = 10, Inductive Load - 6.7 - mJ Rise Time VCC = 600V, IC = 100A, VGE = 15V VCE = 30V, VGE = 0V, f = 1.0MHz nC pF ns Turn-Off Delay Time Fall Time td(off) tf Turn on Switching Loss Eon Turn off Switching Loss Eoff - 6.0 - mJ Ets - 12.7 - mJ 10 - - us TC=25 - 2.9 3.5 TC=100 - 2.3 - TC=25 - 100 - Total Switching Loss Short Circuit Withstand Time Tsc Vcc = 600V, VGE = 15V RG = 10 @ Tc = 100 Electrical Characteristics of FRD @Ta =25oC(unless otherwise specified) Diode Forward Voltage Diode Reverse Recovery Time VFM IF=100A V trr ns 220 TC=100 Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr March 2013.Version 2.0 IF =100A, VR=600V, di/dt = -200A/us TC=25 - 5 - TC=100 - 15 - TC=25 - 250 - TC=100 - 1650 - A nC 2 MagnaChip Semiconductor Ltd. MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Electrical Characteristics of IGBT @TC =25oC(unless otherwise specified) Characteristics Symbol Min. Typ. Max. Unit Junction-to-Case(IGBT Part) RJC - - 0.16 /W Junction-to-Case(DIODE Part) RJC - - 0.40 /W Case-to-Sink ( Conductive grease applied) RCS 0.05 - - /W Weight - - 360 g Weight of Module March 2013.Version 2.0 3 MagnaChip Semiconductor Ltd. MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Thermal Characteristics and Weight 300 Common Emitter TC=25 250 250 15V Collector Current,IC[A] Collector Current, IC[A] 20V 200 Common Emitter TC=125 12V 150 10V 100 50 20V 15V 12V 10V 200 150 100 8V 50 8V 0 0 1 2 3 4 5 0 6 0 Collector-Emitter Voltage, VCE[V] Gate-Emitter Voltage, VGE[V] Collector Current,IC[A] 100 50 0 6 12 10 8 6 4 2 0 0 1 2 3 4 5 6 0 100 Collector-Emitter Voltage,VCE[V] 200 300 400 500 Gate Charge, Qg[nC] Fig.3 Typical Saturation Voltage Characteristics Fig.4 Gate Charge Characteristics 14 Eon(TC=25) Eon(TC=125) Eoff(TC=25) Eoff(TC=125) 12 10 10 8 8 Eoff[mJ] Eon[mJ] 5 VCE=600V,IC=100A TC=25 14 150 12 4 16 200 14 3 Fig.2 Typical Output Characteristics TC=25 TC=125 250 2 Collector - Emitter Voltage,VCE[V] Fig.1 Typical Output Characteristics 300 1 6 6 4 4 2 2 0 0 0 5 10 15 20 25 30 0 RG[ ] 10 15 20 25 RG[ ] Fig.5 Typical turn-on energy = f(RG) VGE = 15V, IC = 100A, VCE = 600V March 2013.Version 2.0 5 Fig.6 Typical turn-off energy = f(RG) VGE = 15V, IC = 100A, VCE = 600V 4 MagnaChip Semiconductor Ltd. 30 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module 300 1000 TJ = 150 VGE 15V 180 800 140 Power Dissipation[W] Collector Current,I C[A] TJ 150 PD=f(TC) 900 160 120 100 80 60 40 20 700 600 500 400 300 200 100 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 Case Temperatute, Tc[] Fig.7 Rated Current vs. Case Temperature 300 120 140 160 TC=25 TC=125 250 Forward Current, IF[A] Thermal Response Zthjc[/W] 100 Fig.8 Power Dissipation vs. Case Temperature 1 0.1 80 TC[] FRD IGBT 0.01 1E-3 200 150 100 50 1E-4 1E-5 TC=25 1E-4 1E-3 0.01 0.1 1 0 10 0 Rectangular Pulse Duration Time[sec] 2 3 4 Forward Drop Voltage, VF[V] Fig.9 Transient Thermal Impedance March 2013.Version 2.0 1 Fig.10 Forward Characteristics 5 MagnaChip Semiconductor Ltd. 5 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module 200 7DM-3 Dimensions are in millimeters, unless otherwise specified March 2013.Version 2.0 6 MagnaChip Semiconductor Ltd. MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Package Dimension MPMD100B120RH NPT & Rugged Type 1200V IGBT Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. March 2013.Version 2.0 7 MagnaChip Semiconductor Ltd.