NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 1
FEATURES
• Optimized for broadband operation from
DC-4000MHz
• 25W P3dB CW power at 3000MHz
• 16-20W P3dB CW power from 1000-2500MHz in
application board with >45% drain efciency
• 10-20W P3dB CW power from 30-1000MHz in ap-
plication board with >50% drain efciency
• High efciency from 14 - 28V
• 4.0 °C/W RTH with maximum TJ rating of 200 °C
• Robust up to 10:1 VSWR mismatch at all angles
with no device damage at 90 °C ange
• Subject to EAR99 export control
DC – 4000 MHz
25 Watt, 28 Volt
GaN HEMT
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Specications (CW, 3000MHz): VDS = 28V, IDQ = 225mA, TC = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter Min Typ Max Units
P3dB Average Output Power at 3dB Gain Compression 43 44 -dBm
P1dB Average Output Power at 1dB Gain Compression -43 -dBm
GSS Small Signal Gain 12 13 -dB
hDrain Efciency at 3dB Gain Compression 57 65 -%
VSWR 10:1 VSWR at all phase angles No damage to the device
Figure 1 - Typical CW Performance in
Load-Pull, VDS = 28V, IDQ = 225mA
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
Figure 2 - Typical CW Performance1 in
Load-Pull, VDS = 28V, IDQ = 225mA
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 2
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - - 4 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 225mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID = 60mA) -0.44 0.55 W
ID,MAX
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2.0V)
-5.4 -A
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
IGGate Current 40 mA
PTTotal Device Power Dissipation (Derated above 25°C) 44 W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 1B (+/-500V)
MM Machine Model ESD Rating (per JESD22-A115) A (>100V)
CDM Charge Device Model ESD Rating (per JESD22-C101) IV (>1000V)
DC Specications: TC = 25°C
Symbol Parameter Min Typ Max Units
qJC
Thermal Resistance (Junction-to-Case),
TJ = 180 °C -4.0 -°C/W
Thermal Resistance Specication
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 3
Table 1: Optimum Source and Load Impedances1 for CW Gain, Drain Efciency, and Output Power Performance
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted
Figure 3 - Optimum Impedances for CW
Performance, VDS = 28V
Frequency
(MHz)
VDS
(V)
ZS
(W)
ZL
(W)
PSAT
(W)
GSS
(dB)
Drain Efciency @ PSAT
(%)
500 14 7.0 + j8.2 8.6 + j7.4 12 27.8 76
500 22 7.0 + j8.2 9.7+ j11.3 21 29.2 74
500 28 7.0 + j8.2 9.7 + j14.1 26 29.7 68
900 14 5.8 + j3.1 6.8 + j4.7 12 22.4 74
900 22 5.8 + j3.1 9.6 + j5.3 24 23.3 74
900 28 5.8 + j3.1 9.8 + j 7.8 26 23.6 67
1800 28 3.5 - j3.6 6.9 + j2.0 26 18.4 69
2500 14 3.9 - j7.5 6.2 - j8.0 13 13.7 70
2500 22 4.8 - j7.0 5.5 - j4.1 19 14.9 69
2500 28 4.8 - j7.0 5.5 - j4.1 26 15.2 69
3000 28 5.3 - j8.8 5.3 - j6.4 26 13.2 66
3500 28 5.0 - j14.5 7.0 - j9.5 26 12.9 63
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 4
72%
43.5dBm
Figure 4 - Load-Pull Contours1, 500MHz,
PIN = 14.5dBm, ZS = 7.0 + j8.2 Ω
66%
44.0dBm
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
72%
44.0dBm
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted
69%
44.0dBm
Figure 5 - Load-Pull Contours1, 900MHz,
PIN = 21.0dBm, ZS = 5.8 + j3.1 Ω
Figure 6 - Load-Pull Contours, 1800MHz,
PIN = 26.5dBm, ZS = 3.5 - j3.6 Ω
Figure 7 - Load-Pull Contours, 2500MHz,
PIN = 29.4dBm, ZS = 4.8 - j7.0 Ω
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 5
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted
63%
44.0dBm 63%
44.0dBm
Figure 8 - Load-Pull Contours, 3000MHz,
PIN = 31.7dBm, ZS = 5.3 - j8.8 Ω
Figure 9 - Load-Pull Contours, 3500MHz,
PIN = 33.5dBm, ZS = 5.0 - j14.5 Ω
Figure 10 - Typical CW Performance in
Load-Pull
Figure 11 - Typical CW Performance1 Over
Voltage in Load-Pull, 500MHz
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 6
Figure 12 - Typical CW Performance1 Over
Voltage in Load-Pull, 900MHz
Figure 13 - Typical CW Performance Over
Voltage in Load-Pull, 2500MHz
Figure 14 - Typical CW Performance Over
Temperature in Nitronex Test Fixture,
3000MHz
Figure 15 - Quiescent Gate Voltage (VGSQ)
Required to Reach IDQ as a Function of
Case Temperature, VDS = 28V
Figure 16 - MTTF of NRF1 Devices as a Function of
Junction Temperature
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted
Figure 17 - Power Derating Curve
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 7
Figure 18 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
Ordering Information1
Part Number Description
NPT1012B NPT1012 in AC200B-2 Metal-Ceramic Bolt-Down Package
1: To nd a Nitronex contact in your area, visit our website at http://www.nitronex.com
NPT1012
NDS-025 Rev. 3, April 2013NPT1012 Page 8
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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