IRFR210/211 N-CHANNEL IRFU210/211 POWER MOSFETS FEATURES Lower Rosjon) * Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance * Extended safe operating area * Improved high temperature reliability D-PAK 1.Gate 2.Drain 3.Source IRFR210/211 |-PAK PRODUCT SUMMARY Part Number Vps Rpsjon) Ib IRFR210/U210 200V 1.59 2.74 IRFR211/0211 150V 1.50 2.7A 1.Gate 2.Drain 3.Source IRFU210/211 MAXIMUM RATINGS Characteristic Symbol IRFR210/U210 IRFR211/U211 Unit Drain-Source Voltage (1) Voss 200 150 Vde Drain-Gate Voltage (Ras=1.0M 2)(1) VpGR 200 150 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25 C Ib 2.7 Adc Continuous Drain Current Tc=100 C Ip 1.7 Adc Drain Current - Pulsed (3) lom 11 Adc Gate Current - Pulsed Iam +15 Adc Single Pulsed Avalanche Energy (4) Eas 31 mJ Avalanche Current las 2.7 A Total Power Dissipation @ Tc=25 C ep 25 Watts Derate above 25 C 0.20 W/C Operating and Storage Junction Temperature Range 1s, Tstg 788 to +150 c Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5 seconds n 300 c Notes : (1) Ti=25C to 150C (2) Pulse test : Pulse width<300zs, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature (4) L=0.64mH, Vad=50V, Ra=25 0, Starting Tu=25C an ELECTRONICS Mm 7964142 OOe2dsbe? 856 IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVpss | Drain-Source Breakdown Voltage IRFR210/U210 200; - - V | Vas=O0V, lp=2504A IRFR211/U211 150] - - Vast | Gate Threshold Voltage 2.0 - 4.0 Vos=Ves, Ip=2504A less | Gate-Source Leakage Forward - - 100 | nA | Vas=20V lass Gate-Source Leakage Reverse - - | -100] nA | Vas=-20V [pss - - 250 |} #A | Vos=Max. Rating, Vas=0V Zero Gate Voltage Drain Current - 5 - - | 1000] #A | Vos=0.8 Max, Rating, Ves=0V, To=125C Rosion) | Static Drain-Source On - - 1.5 Q | Vas=10V, lp=1.4A Resistance (2) Ots Forward Transconductance (2} 0.83] 1.3 - U | Vos>50V, Ip=1.4A Ciss Input Capacitance - 180 - pF Coss | Output Capacitance - 40 - pF | Ves=0V, Vos=265V, f=1.0MHz Crss Reverse Transfer Capacitance - 18 - pF td(on) Turn-On Delay Time - 8.0 12 ns ' Von=0.5 BVoss, Ip=2.7A, Zo=24 2. tr Rise Time - 20 | 30 | ns ae . (MOSFET switching times are essentially ta(off) Turn-Off Delay Time - 17 26 ns | 4 dent of tina t ture) independent of operating temperature tt Fail Time - 20 30 ns 9 Qo Total Gate Charge - - 14 nc ; Ves=10V, In=2.7A, Vos=0.8 Max. Rating (Gate-Source Pluse Gate-Drain) . . a (Gate charge is essentially independent of Qos | Gate-Source Charge - | 24 - nc , operating temperature) Qga Gate-Drain ("Miller") Charge - 6.0 - nc L_ THERMAL RESISTANCE Symbol Characteristics All Units Remark Rthuc Junction-to-Case MAX 5.0 KAW Rthcs Case-to-Sink TYP 17 K/W | Mounting surface flat, smooth and greased Rthua Junction-to-Ambient MAX 110 KAW | Free Air Operation Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature a ELECTRONICS Me 79b414e O0ebbed 75e IRFR210/211 N-CHANNEL IRFU210/211 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Is Continuous Source Current - - 27 A Modified MOSFET - (Body Diode) symbol showing the @ IsM | Pulse Source Current - - 11 | A | integral reverse 3 P-N junction rectifier (Body Diode) (3) Vsp Diode Forward Voltage - - 2.0 V_ | Tu=25C, Is=2.7A, Vas=0V tr Reverse Recovery Time - 170! 400 ns | Tj=150C, Ir=2.7A, dir/dt=100A/uS Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width <300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature 80ps Pulse Test a =~ w u wi e 2 g = = = < 5 5 < w < Ss < & 3 z z < & & 4 1 T= 125C T= 25C Te- 9 10 30 50 60 O 18 3.0 45 6.0 75 9.0 10.5 Vbs, DRAIN-TO-SOURCE VOLTAGE {VOLTS) . Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics a g iA] & a a u = & < = he 5 # WwW = 5 5 3 6 z z z 3 & a s Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area <= ELECTRONICS MB 7964142 0028629 629 a IRFR210/211 N-CHANNEL IRFU210/211 _ POWER MOSFETS ZtnsctWRenc, NORMALIZED EFFECTIVE TRANSIENT gfs, TRANSCONDUCTANCE (SIEMENS) THERMAL IMPEDANCE (PER UNIT) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) THERMAL IMPEDANCE} Et _ 4. Duty Factor. o= 2. 002 2, Per Unit Base=Rmic=1.67 Beg C/W. 3. Taw-To=Pow Zinc (td 10 6 10% 2 5 2 5 107 2 5 10" 2 5 t1. SQUARE WAVE PULSE DURATION (SECONDS) ; Maximum Effective Transient Thermal Impedance Junction: to-Case Vs. Pulse Duration 1 2 5 10 pn, REVERSE DRAIN CURRENT (AMPERES) T= T= 150C 0 1 2 3 4 5 0 3 4 5 Ip, DRAIN CURRENT (AMPERES) Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typicat Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage Ves=10V Io=1.4A Rps(on), DRAIN-TO-SOURCE ON RESISTANCE {NORMALIZED} -40 0 1 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature 160 91 ELECTRONICS Mm 7964142 0026630 340 IRFR210/211 N-CHANNEL IRFU210/211 POWER MOSFETS Ves20 fi MHz Ciss=Cgs+Cgd, Cds SHORTED Cos+Cod &Cds+Cod C, CAPACITANCE (pF) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS} o 20 50 0 3 6 3 12 15 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qs, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-to-Source Voltage 3.0 MEASURED WITH OF 2.0us DURATION INTIAL T;=25C (HEATING OF 2.0ys PULSE IS MINIMAL) Ip, ORAIN CURRENT (AMPERES) 0.6 Ros iow DRAIN-TO-SQURCE ON RESISTANCE (OHMS) oO 0 4 8 10 25 125 150 tp, DRAIN CURRENT (AMPERES) Ts, AMBIENT TEMPERATURE (C) Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature Po, POWER DISSIPATION (WATTS) oO 20 40 60 80 100 120 140 160 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve PSiMsUNig ELECTRONICS ME 7964442 0028631 co?