VP0645 VP0650 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-39 TO-92 TO-220 Die -450V 30 -0.2A VP0645N2 -- -- VP0645ND -500V 30 -0.2A -- VP0650N3 VP0650N5 VP0650ND MIL visual screening available Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Package Options Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) G D S TO-220 TAB: DRAIN Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* DGS TO-39 Case: DRAIN 20V -55C to +150C 300C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-245 SGD TO-92 9 VP0645/VP0650 Thermal Characteristics ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25C C/W C/W ja IDR* IDRM TO-92 -0.1A -0.3A 1W 125 170 -0.1A -0.3A TO-39 -0.25A -0.5A 6W 21 125 -0.25A -0.5A TO-220 -0.25A -0.5A 45W 2.7 70 -0.25A -0.5A Package jc * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS Parameter Min Drain-to-Source Breakdown Voltage VP0650 -500 VP0645 -450 Typ -2 Max Unit V VGS = 0V, ID = -2mA V VGS = VDS, ID = -2mA VGS(th) Gate Threshold Voltage V GS(th) Change in VGS(th) with Temperature -4.8 mV/C VGS = VDS, ID = -2mA IGSS Gate Body Leakage -100 nA VGS = 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 A VGS = 0V, VDS = Max Rating -1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125C mA VGS = -5V, VDS = -25V -200 -200 RDS(ON) VGS = -10V, VDS = -25V -700 Static Drain-to-Source ON-State Resistance 27 22 RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 95 160 COSS Common Source Output Capacitance 50 75 CRSS Reverse Transfer Capacitance 10 20 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 15 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 0.75 50 VGS = -5V, ID = -100mA VGS = -10V, ID = -100mA 30 %/C 125 m -1.8 300 ON-State Drain Current ID(ON) -4 Conditions VGS = -10V, ID = -100mA VDS = -25V, ID = -100mA pF VGS = 0V, VDS =- 25V f = 1 MHz ns VDD = -25V ID = -200mA RGEN = 25 V VGS = 0V, ISD = -50mA ns VGS = 0V, ISD = -50mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 7-246 VP0645/VP0650 Typical Performance Curves Output Characteristics Saturation Characteristics -0.5 -1.0 VGS = -10V -0.4 -0.8 ID (amperes) ID (amperes) VGS = -10V -0.6 -8V -0.4 -0.3 -6V -0.2 -6V -0.2 -4V -0.1 -4V 0 0 0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 50 0.5 TO-220 -25V VVDS DS==-25V 0.4 9 40 0.3 PD (watts) GFS (siemens) TA= -55C TA = 25C 0.2 TA = 125C 0.1 30 20 10 TO-39 TO-92 0 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 25 125 100 150 TC (C) Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 1.0 TO-220 P D = 45W Thermal Resistance (normalized) TO-39 (pulsed) TO-220 (DC) TO-39 (DC) ID (amperes) 75 50 ID (amperes) -0.1 TO-92 (DC) -0.01 T C = 25C 0.8 0.6 TO-39 P D = 6W T C = 25C 0.4 0.2 TO-92 P D = 1W T C = 25C T C = 25C 0 -0.001 -1 -10 -100 0.001 -1000 VDS (volts) 0.01 0.1 tp (seconds) 7-247 1.0 10 VP0645/VP0650 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 50 1.1 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 40 1.0 VGS = -10V 30 20 10 0.9 0 -50 0 50 100 150 0 -0.2 -0.4 -0.6 -0.8 -1.0 ID (amperes) Tj (C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 -1.0 VDS = -25V RDS(ON) @ -10V, -0.1A 1.2 VGS(th) (normalized) ID (amperes) TA = -55C -0.6 TA = 25C -0.4 1.1 1.0 1.0 0.9 TA = 150C -0.2 V(th) @ -2mA 0.8 0 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 150 Tj (C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 200 -10 f = 1MHz VDS = -10V -8 VDS = -40V VGS (volts) C (picofarads) 150 CISS 100 -6 250 pF -4 COSS 50 90 pF -2 CRSS 0 0 0 -10 -20 -30 -40 0 0.5 1.0 1.5 QG (nanocoulombs) VDS (volts) 7-248 2.0 2.5 RDS(ON) (normalized) -0.8