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tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 541, REV. -
HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY LEADED
SILICON RECTIFIER ASSEMBLY
FEATURES:
• Low reverse recovery time • VR = 2000V – 12000V
• Low reverse leakage current • IF = 1.5A
• High thermal shock resistance • IR = 5.0µA
• Corona free construction • trr =150ns
• Low distributed capacitance
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
IF(AV)
Amps
REPETITIVE
SURGE
CURRENT
IFRM
________
Amps
1 CYCLE SURGE
CURRENT
tp = 8.3ms (sine)
IFSM
Amps
I2t
tp = 8.3ms
@ 25°C
PACKAGE
LENGTH
Volts 55°C100°C25°C25°C100°CA2SInches
SCFS2000
SCFS4000
SCFS6000
SCFS8000
SCFS10000
SCFS12000
2000
4000
6000
8000
10000
12000
1.5 1.0 10 150 75 93
1.53
2.53
3.53
4.53
5.53
6.53
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
µAmps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
MAXIMUM
REVERSE
RECOVERY
TIME À
trr @ 25°C
25°C100°CV A nsec
SCFS2000
SCFS4000
SCFS6000
SCFS8000
SCFS10000
SCFS12000
5.0 25
5.4
9.0
12.6
16.2
19.8
23.4
3.0 150
Notes:
- Operating temperature range –55 to +150°C.
- Storage temperature range –55 to +150°C.
À Measured on discrete devices prior to assembly.
SCFS4000 SCFS10000