2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC (max) 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 * Hermetic packages 2 LCC-3 UB * ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. Figure 1. Internal schematic diagramI * Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N2222AUBx JANSR MIL-PRF-19500/255 UB 100 krad high and low dose rate - JANS2N2222AUBx JANS MIL-PRF-19500/255 UB - - 2N2222ARUBx ESCC Flight 5201/002 UB 100 krad - low dose rate Target 2N2222AUBx ESCC Flight 5201/002 UB - Target SOC2222ARHRx ESCC Flight 5201/002 LCC-3 100 krad - low dose rate Yes SOC2222AHRx ESCC Flight 5201/002 LCC-3 - Yes 2N2222ARHRx ESCC Flight 5201/002 TO-18 100 krad - low dose rate Target 2N2222AHRx ESCC Flight 5201/002 TO-18 - - August 2015 This is information on a product in full production. DocID16558 Rev 20 1/24 www.st.com Contents 2N2222AHR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 TO-18 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 7 2/24 6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 DocID16558 Rev 20 2N2222AHR 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCBO VCEO VEBO IC PTOT Parameter Value Unit Collector-base voltage (IE = 0) 75 V Collector-emitter voltage (IB = 0) for JANS devices 50 V Collector-emitter voltage (IB = 0) for ESCC devices 40 V Emitter-base voltage (IC = 0) 6 V Collector current 0.8 A Total dissipation at Tamb 25 C ESCC: TO-18 LCC-3 and UB LCC-3 and UB (1) JANS: LCC-3UB 0.5 0.5 0.73 0.5 Total dissipation at Tcase 25 C ESCC: TO-18 1.8 Total dissipation at Tsp(IS) = 25 C JANS: UB TSTG TJ Storage temperature Max. operating junction temperature W 1 W -65 to 200 C 200 C 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 3. Thermal data Symbol RthJC RthJSP(IS) RthJA LCC-3 and UB TO-18 Thermal resistance junction-case (max) for JANS - - Thermal resistance junction-case (max) for ESCC - 97 Thermal resistance junction-solder pad (infinite sink) (max) for JANS 90 - Thermal resistance junction-solder pad (infinite sink) (max) for ESCC - - Thermal resistance junction-ambient (max) for JANS 325 - Thermal resistance junction-ambient (max) for ESCC 350 240(1) 350 Parameter Unit C/W 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. DocID16558 Rev 20 3/24 24 Electrical characteristics 2 2N2222AHR Electrical characteristics JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables. Tcase = 25 C unless otherwise specified. 2.1 JANS electrical characteristics Table 4. JANS electrical characteristics Symbol Parameter Test conditions Typ. Max. Unit 10 10 10 A nA A Collector cut-off current (IE = 0) VCB = 75 V VCB = 60 V VCB= 60 V ICES Collector cut-off current (IE = 0) VCE = 50 V 50 nA IEBO Emitter cut-off current (IC = 0) VEB = 6 V VEB = 4 V 10 10 A nA ICBO Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) Tamb = 150 C IC = 10 mA 50 V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA Base-emitter saturation voltage IC = 150 mA IC= 500 mA IB = 15 mA IB = 50 mA 0.6 (1) DC current gain IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 150 mA IC = 500 mA IC = 10 mA Tamb = -55 C VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V 50 75 100 100 30 35 2.5 hfe VCE = 20 V f = 100 MHz VCE = 10 V f = 1 kHz IC = 20 mA Small signal current gain IC =1 mA 50 Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz f 1 MHz 8 pF Cibo Output capacitance (IE = 0) VEB = 0.5 V 100 kHz f 1 MHz 25 pF VBE(sat) hFE (1) 4/24 Min. DocID16558 Rev 20 0.3 1 V V 1.2 2 V V 325 300 2N2222AHR Electrical characteristics Table 4. JANS electrical characteristics (continued) Symbol Parameter Test conditions ton Turn-on time VCC = 30 V IB1 = 15 mA toff Turn-off time VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA Min. Typ. IC = 150 mA Max. Unit 35 ns 300 ns Max. Unit 10 10 nA A 10 nA 1. Pulsed duration = 300 s, duty cycle 2 % 2.2 ESCC electrical characteristics Table 5. ESCC electrical characteristics Symbol Parameter Test conditions Min. Typ. ICBO Collector cut-off current (IE = 0) VCB = 60 V VCB = 60 V IEBO Emitter cut-off current (IC = 0) VEB = 3 V Collector-base breakdown voltage (IE = 0) IC = 100 A 75 V Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) IC = 30 mA 40 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 6 V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA DC current gain IC = 0.1 mA IC = 10 mA IC = 150 mA IC = 500 mA IC = 10 mA Tamb = -55 C VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO hFE (1) Tamb = 150 C 35 75 100 40 V 1.2 V 300 35 hfe Small signal current gain VCE = 20 V f = 100 MHz Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz f 1 MHz DocID16558 Rev 20 0.87 0.3 IC = 20 mA 3 10 8 pF 5/24 24 Electrical characteristics 2N2222AHR Table 5. ESCC electrical characteristics (continued) Symbol Parameter Test conditions ton Turn-on time VCC = 30 V IB1 = 15 mA toff Turn-off time VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA Min. Typ. IC = 150 mA Max. Unit 35 ns 285 ns 1. Pulsed duration = 300 s, duty cycle 2 % 2.3 Electrical characteristics (curves) Figure 2. Safe operating area for LCC-3 and UB Figure 3. Safe operating area for TO-18 *,3*)65 ,& $ PV V PV V '&2SHUDWLRQ *,3*)65 ,& $ V '&2SHUDWLRQ V 9&( 9 Figure 4. DC current gain 9&( 9 Figure 5. Collector emitter saturation voltage ( K)( 9&( 9 & & & & & & ,F $ 6/24 $0Y DocID16558 Rev 20 ,F $ $0Y 2N2222AHR Electrical characteristics Figure 6. Base emitter saturation voltage K)( & & & ,F $ 2.4 $0Y Test circuits Figure 7. JANS saturated turn-on switching time test circuit DocID16558 Rev 20 7/24 24 Electrical characteristics 2N2222AHR Figure 8. JANS saturated turn-off switching time test circuit Figure 9. ESCC resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 8/24 DocID16558 Rev 20 2N2222AHR 3 Radiation hardness assurance Radiation hardness assurance The products guaranteed in radiation within the JANS system fully comply with the MILPRF-19500/255 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5201/002 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N2222AHR series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s, identical to the ESCC 100 krad guarantee. It is supported with the same Radiation Verification Test report provided with each shipment. A brief summary of the standard High Dose Rate by wafer lot JANSR guarantee is provided below: - All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-STD-750 for total Ionizing dose. - The table below provides for each monitored parameters of the test conditions and the acceptance criteria Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Value Symbol Parameter Test conditions Unit Min. ICBO Collector to base cutoff current IEBO Emitter to base cutoff current VCB = 75 20 A VCB = 60 V 20 nA VEB = 6 V 20 A VEB = 4 V 20 nA V(BR)CEO Breakdown voltage, collector to emitter IC = 10 mA ICES Collector to emitter cutoff current VCE = 50 V hFE Forward-current transfer ratio Max. 50 V 100 VCE = 10 V; IC = 0.1 mA [25](1) VCE = 10 V; IC = 1.0 mA [37.5](1) VCE = 10 V; IC = 10 mA [50](1) VCE = 10 V; IC = 150 mA [50](1) VCE = 10 V; IC = 500 mA [15](1) 325 300 Collector-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.35 VCE(sat) IC = 500 mA; IB = 50 mA 1.15 VBE(sat) Base-emitter saturation voltage IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA DocID16558 Rev 20 nA V 0.6 1.38 V 2.3 9/24 24 Radiation hardness assurance 2N2222AHR 1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: - Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept for reference - Irradiation at 0.1 rad (Si)/s - Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 8 - Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100C. Table 7. Radiation summary Radiation test 100 krad ESCC Wafer test each Part tested 5 biased + 5 unbiased Dose rate 0.1 rad/s Acceptance MIL-STD-750 method 1019 Displacement damage Optional Agency part number (ex) 5202/001/02 (1) ST part number (ex) SOC2222ARHRG Documents CoC + RVT 1. Example of the 2N2222A in LCC-3 gold finish. 10/24 DocID16558 Rev 20 2N2222AHR Radiation hardness assurance Table 8. ESCC 5201/002 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 60 V 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 3 V 10 nA Collector-base breakdown voltage (IE = 0) IC = 100 A 75 V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 30 mA IC = 10 mA 40 50 V V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 6 V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA 0.3 V VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA 1.2 V Post irradiation gain calculation (2) IC = 0.1 mA IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) [17.5] [37.5] [50] [20] 300 1. Pulsed duration = 300 s, duty cycle 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DocID16558 Rev 20 11/24 24 Package mechanical data 4 2N2222AHR Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 9. Product mass summary 12/24 Package Mass (g) UB 0.06 LCC-3 0.06 TO-18 0.40 DocID16558 Rev 20 2N2222AHR 4.1 Package mechanical data UB package information Figure 10. UB package outline DocID16558 Rev 20 13/24 24 Package mechanical data 2N2222AHR Table 10. UB mechanical data mm. Dim. Min. 14/24 Typ. Max. A 1.16 1.42 C 0.46 0.51 0.56 D 0.56 0.76 0.96 E 0.92 1.02 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.18 I 2.41 2.54 2.67 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.41 0.51 0.61 M 2.46 2.54 2.62 N 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56 DocID16558 Rev 20 2N2222AHR 4.2 Package mechanical data LCC-3 package information Figure 11. LCC-3 package outline 1 2 3 DocID16558 Rev 20 15/24 24 Package mechanical data 2N2222AHR Table 11. LCC-3 mechanical data mm. Dim. Min. Max. A 1.16 C 0.45 0.50 0.56 D 0.60 0.76 0.91 E 0.91 1.01 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.17 I 2.41 2.54 2.66 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.40 0.50 0.60 M 2.46 2.54 2.62 N 1.80 1.90 2.00 R 16/24 Typ. 1.42 0.30 DocID16558 Rev 20 2N2222AHR 4.3 Package mechanical data TO-18 package information Figure 12. TO-18 package outline ) ( ' & $ % / * , + B5(9 DocID16558 Rev 20 17/24 24 Package mechanical data 2N2222AHR Table 12. TO-18 mechanical data mm. Dim. 18/24 Min. Typ. Max. A 12.70 13.20 14.20 B 0.41 0.45 0.48 C 0.36 0.47 D 4.88 5.33 E 4.63 4.70 F 5.31 5.45 G 2.49 2.54 2.59 H 0.80 0.90 1.00 I 0.95 1.00 1.05 L 42 45 48 DocID16558 Rev 20 Order codes 2N2222AHR 5 Table 13. Ordering information DocID16558 Rev 20 Agency specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing J2N2222AUB1 - - Engineering model JANS - UB Gold J2222AUB1 WafflePack 2N2222AUB1 - - Engineering model ESCC - UB Gold 2N2222AUB1 WafflePack SOC2222A1 - - Engineering model ESCC - LCC-3 Gold SOC2222A1 WafflePack JANSR2N2222AUBG MIL-PRF19500/255 - JANSR 100 krad high and low dose rate UB Gold JSR2222 WafflePack JANSR2N2222AUBT MIL-PRF19500/255 - JANSR 100 krad high and low dose rate UB Solder Dip JSR2222 WafflePack JANS2N2222AUBG MIL-PRF19500/255 - JANS - UB Gold JS2222 WafflePack JANS2N2222AUBT MIL-PRF19500/255 - JANS - UB Solder Dip JS2222 WafflePack 2N2222ARUBG 5201/002/11R Target ESCC Flight 100 krad - low dose rate UB Gold 520100211R WafflePack 2N2222ARUBT 5201/002/12R Target ESCC Flight 100 krad - low dose rate UB Solder Dip 520100212R WafflePack 2N2222AUBG 5201/002/11 Target ESCC Flight - UB Gold 520100211 WafflePack 2N2222AUBT 5201/002/12 Target ESCC Flight - UB Solder Dip 520100212 WafflePack SOC2222ARHRG 5201/002/04R Yes ESCC Flight 100 krad - low dose rate LCC-3 Gold 520100204R WafflePack SOC2222ARHRT 5201/002/05R Yes ESCC Flight 100 krad - low dose rate LCC-3 Solder Dip 520100205R WafflePack SOC2222AHRG 5201/002/04 Yes ESCC Flight - LCC-3 Gold 520100204 WafflePack SOC2222AHRT 5201/002/05 Yes ESCC Flight - LCC-3 Solder Dip 520100205 WafflePack 2N2222ARHRG 5201/002/01R Target ESCC Flight 100 krad - low dose rate TO-18 Gold 520100201R Strip Pack 2N2222ARHRT 5201/002/02R Target ESCC Flight 100 krad - low dose rate TO-18 Solder Dip 520100202R Strip Pack Order codes 19/24 CPN CPN Agency specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing 2N2222AHRG 5201/002/01 - ESCC Flight - TO-18 Gold 520100201 Strip Pack 2N2222AHRT 5201/002/02 - ESCC Flight - TO-18 Solder Dip 520100202 Strip Pack Order codes 20/24 Table 13. Ordering information (continued) 1. High dose rate as per MIL-PRF-19500 specification group D, subgroup 2 inspection. Low dose rate as per ESCC specification 22900. 2. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts: ST logo, date code, country of origin (FR), manufacturer code (CSTM), serial number of the part within the assembly lot. Contact ST sales office for information about the specific conditions for: - Products in die form DocID16558 Rev 20 - Other JANS quality levels - Tape and reel packing 2N2222AHR 2N2222AHR Shipping details 6 Shipping details 6.1 Date code Date code xyywwz is structured as below table: Table 14. Date code x 6.2 EM (ESCC & JANS) 3 ESCC FLIGHT - JANS FLIGHT (diffused in Singapore) W yy ww z last two digits of the year week digits lot index in the week Documentation Table 15. Documentation provided for each type of product Quality level Radiation level Engineering model - - JANS Flight - Certificate of conformance MIL-STD 100krad Documentation Certificate of conformance 50 rad/s radiation verification test report JANSR Flight ST 100Krad - Certificate of conformance 0.1 rad/s radiation verification test report on each wafer Certificate of conformance ESCC Flight Certificate of conformance 100 krad 0.1 rad/s radiation verification test report DocID16558 Rev 20 21/24 24 Revision history 7 2N2222AHR Revision history Table 16. Document revision history Date Revision 04-Jan-2010 1 Initial release 16-Apr-2010 2 Added Table 1 on page 1 09-Jul-2010 3 Modified: Table 1 on page 1 and Table 12 on page 18 30-Nov-2011 4 12-Dec-2011 5 Changes - - - - - Modified: Table 5 on page 5 Added: Section 2.3: Electrical characteristics (curves) Modified: Table 1 and 2 Added: Table 2, 11, 12 Minor text changes in the document title and description on the cover page. Minor text changes to improve readability Updated: - Title and description in cover page. - PTOT in Table 2: Absolute maximum ratings. - The entire Section 2: Electrical characteristics. Added: - Table 3: Thermal data, Section 3: Radiation hardness assurance and Table 13: Ordering information. - Figure 7: JANS saturated turn-on switching time test circuit and Figure 8: JANS saturated turn-off switching time test circuit. - Section 6: Shipping details. 17-Apr-2012 6 19-Apr-2012 7 Updated titles in Figure 7: JANS saturated turn-on switching time test circuit and Figure 8: JANS saturated turn-off switching time test circuit. 24-Apr-2012 8 Updated RthJA value in Table 3: Thermal data. 14-May-2012 9 Updated Table 13: Ordering information. 10 Table 1: Device summary and Table 13: Ordering information have been updated. 21-Feb-2013 Updated text in Section 3: Radiation hardness assurance. 04-Apr-2013 11 Inserted Table 7: Radiation summary 06-Jun-2013 12 Updated package name for UB. 18-Sep-2013 13 Table 1: Device summary and Table 13: Ordering information have been updated. Table 1: Device summary and Table 13: Ordering information have been updated. 25-Mar-2014 14 Updated Section 3: Radiation hardness assurance.and Section 4: Package mechanical data Inserted Figure 2: Safe operating area for LCC-3 and UB and Figure 3: Safe operating area for TO-18 22/24 DocID16558 Rev 20 2N2222AHR Revision history Table 16. Document revision history (continued) Date Revision Changes 01-Apr-2014 15 Modified note in package silhouette on cover page. 29-May-2014 16 Updated Table 1: Device summary and Table 13: Ordering information. 17-Feb-2015 17 27-Feb-2015 18 05-May-2015 19 21-Aug-2015 20 Updated Table 1.: Device summary Minor text changes. Minor text changes Updated Table 1.: Device summary Minor text changes. Updated: Section 4.3: TO-18 package information Minor text changes DocID16558 Rev 20 23/24 24 2N2222AHR IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved 24/24 DocID16558 Rev 20