THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Amb ient Max 625 oC/W
• Device mounted on a PCB area of 1 cm2.
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = -30 V
VCB = -30 V TC = 150 oC-1 -15
-5 nA
µA
IEBO Emitter Cut-off Cu rrent
(IC = 0) VEB = -5 V -100 nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA-50 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -2 mA -45 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA-5 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -10 mA IB = -0.5 mA
IC = -100 mA IB = -5 mA -0.07
-0.25 -0.3
-0.65 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = -10 mA IB = -0.5 mA
IC = -100 mA IB = -5 mA -0.7
-0.85 V
V
VBE(on)∗Base-Emitter On
Voltage IC = -2 mA VCE = -5 V
IC = -10 mA VCE = -5 V -0.6 -0.65 -0.75
-0.82 V
V
hFE∗DC Current Gain IC = -2 mA VCE = -5 V 220 475
fTTransition Frequency IC = -10 mA VCE = -5 V f = 100MHz 100 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = -10 V f = 1 MHz 4.5 pF
NF Noise Figure VCE = -5 V IC = -0.2 mA f = 1KHz
∆f = 200 Hz RG = 2 KΩ210dB
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
BC857BW
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