07/2003
S24 Package
SOT-89
Figure 1: Block Diagram
AGB3306
50Ω High Linearity Low Noise
Wideband Gain Block
PRELIMINARY DATA SHEET - Rev 1.2
FEATURES
• DC-7000 MHz Operation Bandwidth
• +27.5 dBm Output IP3 at 850 MHz
• 4.5 dB Noise Figure at 850 MHz
• 20.5 dB Gain at 850 MHz
• +14.5 dBm P1dB at 1950 MHz
• SOT-89 Package
• Single +5 V to +12 V Supply
• Case Temperature: -40 to +85 °C
APPLICATIONS
• Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
• Fixed Wireless
• MMDS/WLL
• WLAN, HyperLAN
PRODUCT DESCRIPTION
The AGB3306 is one of a series of high performance
InGaP HBT amplifiers designed for use in
applications requiring high linearity, low noise and
low distortion. No external matching components
are needed for insertion into a 50Ω system. With a
high output IP3, low noise figure and wide band
operation, the AGB3306 is ideal for wireless
infrastructure applications such as Cellular Base
Stations, MMDS, and WLL. Offered in a low cost
SOT-89 surface mount package, the AGB3306
requires a single supply voltage, and typically
consumes 0.25 Watts of power using a +8 V supply.
RF Output
/ Bias
RF Input
2PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
2 31
4
RF
IN
RF
OUT
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
NIP EMAN NOITPIRCSED
1FR
NI
tupnIFR
2DNGdnuorG
3FR
TUO
saiB/tuptuOFR
4DNGdnuorG
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
RETEMARAP NIM XAM TINU
V(egatloVeciveD
CC
)06+CDV
P(rewoPtupnIFR
NI
)-01+mBd
T(erutarepmeTegarotS
GTS
)04-051+C°
erutarepmeTnoitcnuJ-002+C°
Notes:
(1) Operating frequency is defined by the output return loss (S22) having a VSWR less
than 2:1.
(2) Voltage applied through a bias resistor and inductor. Refer to Figure 3. For other
supply voltages, see the APPLICATION INFORMATION section.
RETEMARAP NIM PYT XAM TINU
)f(ycneuqerFgnitarepO
)1(
-- 0007 zHM
V(egatloVylppuS
YLPPUS
)
)2(
-8+- CDV
T(erutarepmeTesaC
C
)04--58+C°
4PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
Table 4: Electrical Specifications
(TA = +25 °C, VSUPPLY = +8 VDC, 50ΩΩ
ΩΩ
Ω System)
Notes:
(1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power
per tone.
(2) The value for Thermal Resistance is based on a Device Voltage (VCC) of
+3.8 Volts.
3. Performance as measured on ANADIGICS test fixture (see Figure 3).
Figure 3: Application Circuit (50Ω Ω
Ω Ω
Ω Terminations)
CC
AGB3306
RF Choke
DC Block DC Block
Bypass
RF
Input
RF
Output
SUPPLY 120 W
Rs
0.01 Fm
100 nH
0.01 Fm0.01 Fm
100 pF 10 pF
V
V
RETEMARAP NIM PYT XAM TINU
S(niaG
12
)
zHM058
zHM0591
zHM0412
zHM0542
-
-
-
-
6.02
7.81
2.81
7.71
-
-
-
-
Bd
3PItuptuO
)1(
zHM058
zHM0591
zHM0412
zHM0542
-
-
-
-
5.72+
4.72+
8.72+
0.72+
-
-
-
-
mBd
)Bd1P(noisserpmoCBd1tuptuO
zHM0591-6.41+- mBd
erugiFesioN
zHM058-5.4- Bd
(ecnatsiseRlamrehT θ
CJ
)
)2(
-024- W/C°
tnerruCylppuS-33- Am
(ICC)
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
5
PERFORMANCE DATA
Figure 4: Gain vs. Frequency
De-embedded 50 S-parameter
(T = +25 °C, V = +3.8 V, I = 33 mA)
W
ACCCC
0
5
10
15
20
25
01234567
Frequency (GHz)
Mag S21: Gain (dB)
Figure 5: Isolation vs. Frequency
De-embedded 50 S-parameter
(T = +25 C, V = +3.8 V, I = 33 mA)
W
ACC
o
CC
-50
-40
-30
-20
-10
0
01234567
Frequency (GHz)
Mag S12: Isolation (dB)
Figure 6: Input Return Loss vs. Frequency
De-embedded 50 S-parameter
(T = +25 C, V = +3.8 V, I = 33 mA)
W
ACC
o
CC
-50
-40
-30
-20
-10
0
01234567
Frequency (GHz)
Mag S11: Input Return Loss (dB)
Figure 7: Output Return Loss vs. Frequency
De-embedded 50 S-parameter
(T = +25 C, V = +3.8 V, I = 33 mA)
W
ACC
o
CC
-50
-40
-30
-20
-10
0
01234567
Frequency (GHz)
Mag S22: Output Return Loss (dB)
6PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
APPLICATION INFORMATION
Table 5: Bias Resistor Values for
Various Supply Voltages
The AGB3306 is optimized for a bias current of
33 mA. Using a +8 V supply, a bias resistor (RS) of
120 Ω will provide the appropriate bias (see Figure
3). Table 5 shows the recommended value of RS for
other supply voltages.
V
YLPPUS
V5+V8+V9+V21+
R
S
03 Ω021 Ω051 Ω042 Ω
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
AGB3306
7
PACKAGE OUTLINE
Figure 8: S24 Package Outline – SOT-89
Figure 9: Branding Specification
3306
LLLLNN
LLLL= FOUR NUMERIC CHARACTERS
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.2
07/2003
8
AGB3306
ORDERING INFORMATION
REBMUNTRAP ERUTAREPMET
EGNAR
EGAKCAP
NOITPIRCSED GNIGAKCAPTNENOPMOC
1Q42S6033BGAC°58+ot04-egakcaP98-TOSleeRdnaepaTeceip000,1
