VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 1Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VBP104FAS and VBP104FASR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 4.4 mm2 sensitive area and
a daylight blocking filter matched with IR emitters operating
at wavelength 870 nm or 950 nm.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
Radiant sensitive area (in mm2): 4.4
High radiant sensitivity
Daylight blocking filter matched with 870 nm to
950 nm emitters
Fast response times
Angle of half sensitivity: ϕ = ± 65°
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Hologen-free according to IEC 61249-2-21 definition
APPLICATIONS
High speed detector for infrared radiation
Infrared remote control and free air data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
21726-1
VBP104FAS
VBP104FASR
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
VBP104FAS 35 ± 65 780 to 1050
VBP104FASR 35 ± 65 780 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VBP104FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
VBP104FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow sloder profile fig. 8 Tsd 260 °C
Thermal resistance junction/ambient RthJA 350 K/W
VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 2Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF11.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD48 pF
VR = 3 V, f = 1 MHz, E = 0 CD17 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik32 μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 25 35 μA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp950 nm
Range of spectral bandwidth λ 0.5 780 to 1050 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/Hz
Rise time VR = 10 V, RL = 1 kΩ,
λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ,
λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 3Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8421
VR = 5 V
λ = 950 nm
Ee - Irradiance (mW/cm2)
I
ra
- Reverse Light Current (µA)
0.1 1 10
1
10
100
VR - Reverse Voltage (V)
100
94 8422
Ira - Reverse Light Current (µA)
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
0.1 1 10
0
20
40
60
80
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
100
94 8423
E = 0
f = 1 MHz
21743 λ - Wavelength (nm)
S(λ)φ, rel - Relative Spectral Sensitivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
600 700 800 900 1000 1100
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
8
0.7
1.0
ϕ - Angular Displacement
VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 4Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS FOR VBP104FAS in millimeters
Drawing-No.: 6.541-5088.01-4
Issue: 1; 15.04.10
22107
8.9
5.4
1.8
Recommended solder pad
specications
according to DIN
technical drawings
Anode Cathode
2.2 0.18 ± 0.2
4.4 ± 0.1
1.95
3.9 ± 0.1
1 ± 0.15
6.4 ± 0.3
0.8 ± 0.1
1.6 ± 0.1
1.2 ± 0.1
Chip Size
2.4 x 2.4
0.1 - 0.1
(0.47 ref.)
Flat area 0.3 min.
0.75 ± 0.050.15 ± 0.02
VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 5Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS FOR VBP104FASR in millimeters
Drawing-No.: 6.541-5087.01-4
Issue: 1; 15.04.10
22106
8.9
5.4
1.8
Recommended solder pad
specications
according to DIN
technical drawings
A
node Cathode
2.2 0.18 ± 0.2
4.4 ± 0.1
1.95
3.9 ± 0.1
1 ± 0.15
6.4 ± 0.3
0.8 ± 0.1
1.6 ± 0.1
Chip Size
2.4 x 2.4
1.2 ± 0.1
0.1 min.
(0.47 ref.)
Flat area 0.3 min.
0.75 ± 0.050.15 ± 0.02
VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 6Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING DIMENSIONS FOR VBP104FAS in millimeters
TAPING DIMENSIONS FOR VBP104FASR in millimeters
21730
21731
VBP104FAS, VBP104FASR
www.vishay.com Vishay Semiconductors
Rev. 1.2, 24-Aug-11 7Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REEL DIMENSIONS FOR VBP104FAS AND VBP104FASR in millimeters
SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
21732
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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