DS23018 Rev. 11 - 3
1 of 3
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SBL3030PT - SBL3060PT
© Diodes Incorporated
NOT RECOMMENDE D
FOR NEW DESIGN SBL3030PT - SBL3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protect ion
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: TO-3P
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
Polarity: As Marked on Body
Ordering Information: See Page 3
Marking: Type Number
Weight: 5.6 grams (approximate)
A
B
E
G
J
L
M
N
PQ
K
S
M
H
R
D
C
TO-3P
Dim Min Max
A 1.88 2.08
B 4.87 5.13
C 21.25 21.75
D 19.60 20.10
E 2.10 2.40
G 0.51 0.76
H 15.75 16.25
J 1.93 2.18
K 2.903.20
L 3.78 4.38
M 5.20 5.70
N 1.12 1.22
P 1.90 2.16
Q 2.93 3.22
R 11.70 12.80
S 4.40 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
SBL
3030PT SBL
3035PT SBL
3040PT SBL
3045PT SBL
3050PT SBL
3060PT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 30 35 40 45 50 60 V
RMS Reverse Voltage VR
(
RMS
)
21 24.5 28 31.5 35 42 V
Average Rectified Output Current @ TC = 95°C
(Note 1) IO 30 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 275 A
Forward Voltage Drop @ IF = 15A, TC = 25°C VFM 0.55 0.70 V
Peak Reverse Current @ TC = 25°C
at Rated DC Blocking Voltage @ TC = 100°C IRM 1.0
75 mA
Typical Total Capacitance (Note 2) CT 1100 pF
Typical Thermal Resistance Junction to Case (Note 1) R
θ
Jc 2.0 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
DS23018 Rev. 11 - 3
2 of 3
www.diodes.com
SBL3030PT - SBL3060PT
© Diodes Incorporated
NOT RECOMMENDE D
FOR NEW DESIGN
0
6
12
24
30
18
050 100
I, AVE
R
A
G
E
R
E
C
T
I
F
IED
C
U
R
R
E
N
T
(A)
(AV)
T , CASE TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
C
150
0.1
1.0
10
100
0.2 0.4 0.6 0.8
I, INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F
V , INST ANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics per Element
F
SBL3030PT - SBL30450PT
SBL3050PT - SBL3060PT
0
50
100
150
200
250
300
110100
I,
P
EAK
F
O
R
WA
R
D S
U
R
G
E
C
U
R
R
EN
T
(A)
FSM
NUMBER OF CYCLES A T 60 Hz
Fig. 3 Max Non-Repetitive Forward Surge Current
8.3 ms single half-sine-wave
100
1,000
4,000
0.1 1.0 10 100
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
V , REVERSE VOLT AGE (V)
Fig. 4 T ypical Capacitance per Element
R
T = 25°C
f = 1MHz
j
0.01
0.1
1.0
10
100
I , INS
T
AN
T
ANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(A)
R
04080
PERCENT OF PEAK REVERSE VOLT AGE (%)
Fig. 5 Typical Reverse Characteristics per Element
120
DS23018 Rev. 11 - 3
3 of 3
www.diodes.com
SBL3030PT - SBL3060PT
© Diodes Incorporated
NOT RECOMMENDE D
FOR NEW DESIGN
Ordering Information (Note 4)
Device Packaging Shipping
SBL3030PT TO-3P 30/Tube
SBL3035PT TO-3P 30/Tube
SBL3040PT TO-3P 30/Tube
SBL3045PT TO-3P 30/Tube
SBL3050PT TO-3P 30/Tube
SBL3060PT TO-3P 30/Tube
Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
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