Low Noise, High Sensitivity Optical Sensor
Data Sheet
ADPD2211
Rev. 0 Document Feedback
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FEATURES
Ultrahigh detectivity photodetector
90 fA/√Hz (typical) ultralow noise floor
Signal-to-noise ratio (SNR) near shot noise limit
137 µA (typical) of supply current when active
(EE = 0 µW/cm2)
1 µA (typical) of supply current in standby
High speed, deep junction photodiode
Nominal linear output current: 240 µA (typical)
Flexible output configuration
Excellent pulse response
High ambient light rejection
Space-saving, 3 mm × 3 mm LFCSP package
APPLICATIONS
Heart rate, pulse oximetry monitoring
(photoplethysmography)
Battery-powered medical sensors
Chemical analysis
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The ADPD2211 is an optical sensor optimized for biomedical
applications. Very low power consumption and near theoretical
signal-to-noise ratio (SNR) are achieved by packaging an ultralow
capacitance deep junction silicon photodiode operated in zero
bias photoconductive mode with a low noise current amplifier.
The ADPD2211 offers a typical 400 kHz bandwidth performance,
which is well suited for use with pulsed excitation. The ADPD2211
uses very little power during operation and incorporates a
power-down pin, enabling power cycling to optimize battery
life in portable applications. The ADPD2211 provides shot
noise limited performance, making it an excellent choice for
measuring signals with the highest possible fidelity in low light
conditions. This combination of low power, very high SNR, and
electromagnetic interference (EMI) immunity enables low power
system solutions not possible with traditional photodiode (PD)
and transimpedance amplifier (TIA) systems.
GNDPWDN
OUT
ADPD2211
VCC
CURRENT
AMPLIFIER
+
–
13720-001
ADPD2211 Data Sheet
Rev. 0 | Page 2 of 13
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
Soldering Profile ........................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ............................................. 6
Terminology ...................................................................................... 8
Theory of Operation ........................................................................ 9
Overvie w ........................................................................................ 9
Shot Noise Limited Performance ................................................9
Sensitivity and SNR .......................................................................9
Linearity ..........................................................................................9
Package Considerations ................................................................9
EPAD Connection .........................................................................9
Applications Information .............................................................. 10
Powering the Device .................................................................. 10
Power-Down Mode .................................................................... 10
Pulse Mode Operation ............................................................... 10
Output Configuration ................................................................ 10
3-Wire Cable Voltage Configuration ....................................... 10
3-Wire Current Mode Configuration ...................................... 10
Evaluation Board Schematic and Layout .................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
4/16—Revision 0: Initial Version
Data Sheet ADPD2211
Rev. 0 | Page 3 of 13
SPECIFICATIONS
VCC = 3.3 V, TA = 25°C, λ = 528 nm, unless otherwise noted. IPD is the photodiode current, IMOD is the modulation current, EE is
irradiance, IOUT is output current, VBIAS is the bias voltage, RFEEDBACK is the TIA feedback resistor, and RLOAD is the load resistance.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
GAIN
Gain (Current Amplifier) βTLA 24
DYNAMIC PERFORMANCE
Frequency Response Peaking
<6
dB
Rise Time tR 10% to 90% full scale (FS) (IOUT = 24 µA) 1.24 µs
Fall Time tF 90% to 10% FS (IOUT =24 µA) 1.27 µs
Bandwidth BW IPD = 10 nA, IMOD = 1 nA 400 kHz
OPTICAL PERFORMANCE
Diode Active Area 1.8 mm2
Saturation Irradiance 2200 µW/cm2
NOISE PERFORMANCE
Current Noise, Output Referred1 EE = 0 µW/cm2 1920 fA/√Hz
IPD = 10 nA to 300 nA 1.4 × NSHOT fA/√Hz
IPD > 300 nA 1.15 × NSHOT fA/√Hz
Current Noise Floor, Input Referred
E
E
= 0 µW/cm
2
, at 1 kHz
90
150
fA/√Hz
Noise Equivalent Power NEP At 1 kHz 100 fW/√Hz
EE Required for SNR = 10000:1 At 1 kHz 200 nW/cm2
POWER AND SUPPLY
Supply Voltage VCC 1.8 3.3 5.0 V
Power Supply Rejection Ratio PSRR VCC = 1.8 V to 5.0 V, EE = 2200 µW/cm2 120 nA/V
Current
Standby ISTANDBY PWDN > VIH 1 µA
Supply at E
E
= 0 µW/cm2
I
FLOOR
137
µA
Supply2 ISUPPLY IOUT = 10 µA 166 µA
IOUT = 240 µA 950 µA
OUTPUT CHARACTERISTICS
Amplifier Static Bias Current
Input Referred EE = 0 µW/cm2 10 nA
Output Referred EE = 0 µW/cm2 240 nA
Maximum Output Voltage VOUT_MAX VCC − 0.75 V
Nominal Linear Output Current IOUT_FS 240 µA
Linearity into TIA VBIAS = 1.3 V, RFEEDBACK = 25 kΩ 60 dB
Linearity into Resistive Load IOUT < 100 µA , RLOAD = 5 kΩ 60 dB
Peak Output Current3 300 µA
Output Capacitance COUT From OUT to GND 5 pF
Output Resistance ROUT From OUT to GND 1000 MΩ
POWER-DOWN LOGIC
Input Voltage
High Level VIH VCC − 0.2 V
Low Level
V
IL
0.2
V
Leakage Current
High IIH PWDN = 3.3 V 0.2 nA
Low IIL PWDN = 0 V −8.5 µA
OPERATING AMBIENT TEMPERATURE RANGE −40 +85 °C
1 NSHOT refers to photon shot noise. Photon shot noise is the fundamental noise floor for all photodetectors in photoconductive mode.
2 ISUPPLY = IFLOOR + (3.3 × IOUT).
3 Outputs greater than IOUT_FS may have degraded performance.
ADPD2211 Data Sheet
Rev. 0 | Page 4 of 13
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage (VCC) 6.0 V
Storage Temperature Range
−40°C to +105°C
Junction Temperature 110°C
Solder Reflow Temperature (<10 sec) 260°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θJC Unit
3 mm × 3 mm LFCSP 68.08 12.18 °C/W
SOLDERING PROFILE
Figure 2 and Table 4 provide information about the recommended
soldering profile.
Figure 2. Recommended Soldering Profile
Table 4. Recommended Soldering Profile Limits1
Profile Feature Condition (Pb Free)
Average Ramp Rate (TL to TP) 2°C/sec maximum
Preheat
Minimum Temperature (T
SMIN
)
150°C
Maximum Temperature (TSMAX) 200°C
Time from TSMIN to TSMAX (tS) 60 sec to 120 sec
Ramp-Up Rate (TSMAX to TL) 2°C/sec maximum
Liquidus Temperature (TL) 217°C
Time Maintained Above TL (tL) 60 sec to 150 sec
Peak Temperature (T
P
)
260°C + (0°C/−5°C)
Time Within 5°C of Actual TP (tP) 20 sec to 30 sec
Ramp-Down Rate 3°C/sec maximum
Time from 25°C (t25°C) to Peak
Temperature
8 minutes maximum
1 Based on JEDEC Standard J-STD-020D.1.
ESD CAUTION
t
P
t
L
t
25°C TO PEAK
t
S
PREHEAT
CRITICAL ZONE
TLTO TP
TEMPERATURE
TIME
RAMP-DOWN
RAMP-UP
TSMIN
TSMAX
TP
TL
13720-022
Data Sheet ADPD2211
Rev. 0 | Page 5 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1
NIC
Not Internally Connected. This pin can be grounded.
2 NIC Not Internally Connected. This pin can be grounded.
3 VCC Supply Voltage.
4 PWDN Power-Down Input. This pin must be tied high or low; it cannot be left floating. Pull this pin high to disable the
device.
5 GND Ground.
6
OUT
Output Terminal.
7 NIC Not Internally Connected. This pin can be grounded.
8 NIC Not Internally Connected. This pin can be grounded.
9 EPAD Exposed Pad. The exposed pad must be left floating. The printed circuit board (PCB) area under the exposed pad
can be left blank to facilitate this requirement.
VCC
PWDN
NIC
3
4
1
2
NIC
6
5
8
+
–
7
OUT
GND
NIC
NIC
ADPD2211
TOP VIEW
(No t t o Scal e)
NOTES
1. NI C = NOT INT E RNALLY CONNECTED.
2. THE EXPOSED PAD MUST BE LEFT FLOATING.
THE PCB AREA UNDER THE EXPOSED PAD
CAN BE L EFT BLANK TO FACILITATE
THIS REQUIREMENT.
13720-003
ADPD2211 Data Sheet
Rev. 0 | Page 6 of 13
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Relative Radiant Sensitivity vs. Angular Displacement
Figure 5. Responsivity vs. Wavelength
Figure 6. Power-Down Recovery Time, 1%
Figure 7. Supply Current vs. Output Current (IOUT) over Supply Voltage (VCC)
Figure 8. Small Signal Pulse Response
Figure 9. Bandwidth/Peaking
–80°
–70°
–60°
–50°
–40°
–30°–20°–10°0°
0.20.2 0.40.4 0.60.6
0.8
S
REL
RELATIVE RADIANT SENSITIVITY
1.0
13720-004
HORIZONTAL
VERTICAL
0
0
2
4
6
8
10
12
300
331
362
393
424
455
486
517
548
579
610
641
672
703
734
765
796
827
858
889
920
951
982
1013
1044
1075
RESPONSIVITY (A/W )
WAVELENGTH (λ)
13720-005
–10 10 30 50
OUTPUT WAVEFORM
TIME (µs)
1µs
10µs
PWDN
13720-007
0
200µ
400µ
600µ
800µ
1.0m
1.2m
1.4m
1.6m
1.8m
050 100 150 200 250 300 350 400 450
IOUT (µ A)
SUPPLY CURRENT (A)
13720-009
VCC = 1.8V
VCC = 2.5V
VCC = 3.3V
VCC = 5V
020 40 60 80 100
NORM ALIZED OUT P UT
TIME (µs)
1µA
100nA
13720-010
13720-011
–12
–10
–8
–6
–4
–2
0
2
100 1k 10k 100k 1M
NORMALIZED RESPONSE (dB)
FREQUENCY (Hz)
1µA
10µA
Data Sheet ADPD2211
Rev. 0 | Page 7 of 13
Figure 10. Noise Bandwidth/Peaking
Figure 11. Linearity Error vs. Output Current (IOUT) over Temperature
Figure 12. Linearity Error vs. Output Current (IOUT) over Supply Voltage (VCC)
10f
100f
1p
10p
100 1k 10k 100k 1M
RMS NOIS E CURRE NT REFERRE D TO INP UT (A)
FREQUENCY (Hz)
13720-014
–0.25
–0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
0.20
0.25
020 40 60 80 100
LINEARITY ERRO R ( %)
I
OUT
(µA)
–40°C
+25°C
+85°C
13720-016
–0.25
–0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
0.20
0.25
020 40 60 80 100
LINEARITY ERRO R ( %)
IOUT (µ A)
VCC = 1.8V
VCC = 2.5V
VCC = 3.3V
VCC = 4V
VCC = 5V
13720-017
ADPD2211 Data Sheet
Rev. 0 | Page 8 of 13
TERMINOLOGY
Optical Power
Optical power is defined as the photon energy per unit of time
measured as radiant flux (Φ) or radiant power, which is radiant
energy (Q) per unit of time.
Responsivity
Photodiode responsivity, ρ, is a constant that correlates incident
optical power (POPT) with photodiode current (IPD) and is typically
expressed in units of amperes per watt (A/W). Responsivity is
essentially the quantum efficiency of the ability of the sensor to
convert light into electron/hole pairs and is highly dependent
upon the wavelength of the incident light as well as sensor
material and temperature.
Photodiode Area
Photodiode area is a measure of the photosensitive area of the
diode. In PIN diodes, this is the photosensitive area of intrinsic
silicon between the positive and negative doped diffusion areas.
In general, larger photodiodes demonstrate greater sensitivity as
the output signal increases linearly with photosensitive area
while noise increases at the sum of the square of the photosensitive
area. A larger photodiode area has a higher capacitance and
longer carrier diffusion paths adversely affecting bandwidth.
Photoconductive Mode
Photoconductive operation of a photodiode occurs when
photons entering the silicon generate electron/hole pairs that
are swept by the electric field to the opposite terminal. These
carriers are presented at the terminals of the photodiode as a
current proportional to the luminous flux incident on the
junction of the photodiode.
Shot Noise
Shot noise is a statistical fluctuation in any quantized signal
such as photons of light and electrons in current. The magnitude
of the shot noise is expressed as a root mean square (rms) noise
current. Shot noise is a fundamental limitation in photodetectors
and takes the form of
Shot noise = √(2qIPD)
where:
q is the charge of an electron (1.602 × 10−19 Coulomb).
IPD is the photodiode current.
Photoplethysmography (PPG)
Photoplethysmography uses light to measure biological
functions by sensing changes in the absorption spectra of soft
tissue due to changes in hemoglobin volume and composition.
Linearity
Linearity is a measure of the deviation from an ideal change
in output current relative to a change in optical power falling
on the sensor. Linearity is specified as the deviation from a best
straight line fit of the current output of the sensor over a speci-
fied range of optical power. Linearity is a critical specification in
PPG measurements due to the requirement of sensing small ac
signals impressed upon large dc offsets.
Static Bias
The ADPD2211 has an internal 10 nA bias that linearizes the
input current mirror at low input levels and prevents transient
reverse bias of the amplifier input stage. This bias is fixed and
appears on the output as a 240 nA typical offset.
Noise Equivalent Power (NEP)
Noise equivalent power is the amount of incident light power
on a photodetector, which generates a photocurrent equal to the
total noise current of the sensor. The noise level is proportional
to the square root of the frequency bandwidth; therefore, NEP
is specified with a 1 Hz bandwidth. NEP is the fundamental
baseline of the detectivity of the sensor.
Data Sheet ADPD2211
Rev. 0 | Page 9 of 13
THEORY OF OPERATION
OVERVIEW
The ADPD2211 is an integrated, low power, optical sensor
composed of a deep junction silicon photodiode coupled to a
low noise current amplifier in an optically transparent chip
scale package. The ADPD2211 is optimized for battery-
powered, wearable, medical, and industrial optical sensing
applications requiring low power and high SNR.
SHOT NOISE LIMITED PERFORMANCE
The on-board photodiode of the ADPD2211 is operated in
photoconductive mode with a zero bias voltage. This mode of
operation allows the diode to operate with no dc dark current
caused by leakage across the depletion area of the diode,
providing a fundamental limit of shot noise. The noise level is
proportional to the square root of the frequency bandwidth.
SENSITIVITY AND SNR
SNR is a measure of the ability of the sensor to separate the
signal of interest from spurious signals that occur from the
surrounding environment of the device, such as ambient light,
nonlinearity, and noise within the device itself.
The ADPD2211 operates its integrated photodiode in a zero
biased photoconductive mode to provide near zero dark current
and, therefore, no dark shot noise component contribution
from the photodiode. The integrated current amplifier requires
an internal bias current of 10 nA to improve bandwidth and
linearize response at low light levels. This bias generates a shot
noise component of 90 fA/√Hz at the output of the current
amplifier and establishes the noise floor of the ADPD2211.
To optimize the sensitivity of the ADPD2211, it is important to
ensure that the optical signal is concentrated on the photoactive
area of the integrated photodiode. The on-board precision
current amplifier is shielded and is not significantly affected by
light hitting its surface, but device sensitivity is based solely on
the optical power incident to the photodetector.
LINEARITY
Linearity is critical to PPG due to the need to accurately extract
a small amplitude, pulsatile ac signal modulated onto the large
dc component, which is caused by nonpulsatile tissue absorption
and ambient light. In pulsed light applications, bandwidth is a
critical component of the linearity because fast recovery of the
device from dark and/or power-down conditions can have a
profound effect on the ability of the sensor to extract the signal
of interest. The ADPD2211 is production trimmed to ensure
60 dB linearity at an irradiance of up to EE = 2200 µW/cm2, λ =
528 nm, at a supply voltage of 3.3 V.
PACKAGE CONSIDERATIONS
The ADPD2211 is packaged with a transparent epoxy molding
compound. To maintain optimum sensitivity, take care in
handling the device to prevent scratches or chemicals that may
affect the surface finish above the photodiode. Due to the lack
of stabilizing fillers (typically up to 70% silica) used in opaque
molding compounds, the maximum storage temperature of the
ADPD2211 is 105°C. The temperature profile for soldering is
shown in Figure 2.
EPAD CONNECTION
The EPAD on the ADPD2211 acts as a common electrical, thermal,
and mechanical platform for the photodiode and amplifier and
must not be connected externally. External cooling is not required
due to the extremely low power consumption of the ADPD2211.
Analog Devices, Inc., recommends removal of traces beneath the
device to eliminate potential coupling of external signals into the
sensitive internal nodes of the ADPD2211.
ADPD2211 Data Sheet
Rev. 0 | Page 10 of 13
APPLICATIONS INFORMATION
The current output of the ADPD2211 provides flexibility in
interfacing to external circuitry.
POWERING THE DEVICE
The ADPD2211 is powered from a single positive 1.8 V to 5.0 V
supply. The ADPD2211 features high PSRR, but proper circuit
layout and bypassing is recommended to provide maximum
sensitivity, especially in situations where the ADPD2211 may share
reference nodes with transmitters in pulse mode applications.
Above the quiescent current of the integrated current amplifier,
there is a linear relationship to incident light as the current
amplifier amplifies the photodiode output by a factor of 24. In
typical battery-powered operation, the output of the source
LEDs is dynamically reduced to save power based on the received
signal strength of the photosensor. The extremely low noise
floor of the ADPD2211 provides very high SNR, allowing
accurate signal extraction with minimal source power and at
low incident optical power.
POWER-DOWN MODE
The ADPD2211 is optimized for battery-powered operation by
the inclusion of an extremely low power standby mode that can
be quickly switched to provide ultralow power consumption
during dark periods in pulsed or mode locked applications,
where the light source is cycled to improve ambient light
rejection and reduce transmitter power consumption. The
power-down pin is not internally pulled up or down, and must
be connected to an external logic level for proper operation of
the ADPD2211.
PULSE MODE OPERATION
The ADPD2211 is optimized for battery-powered operation by
the inclusion of a power-down pin (PWDN). When sensing is
inactive, the ADPD2211 can be quickly switched into standby
mode, reducing the supply current to 1 µA during dark periods
for pulsed or mode locked applications, where the light source
is cycled to improve ambient light rejection and reduce
transmitter power consumption.
For multiple wavelength systems, sequentially pulsing the optical
emitters removes the need for multiple narrow bandwidth sensors.
For both multiple wavelength (SpO2) and single wavelength
(heart rate monitoring) systems, pulsed operation can provide
significant power savings for battery-powered systems. Pulsed
mode operation provides a calibration signal that is necessary to
compensate for ambient light diffused throughout the tissue,
which can be extracted by measuring the sensor output while
the system emitters are off. Advanced algorithms can then
extract the signal of interest from dc offsets, noise, and
interferer signals such as motion artifacts.
OUTPUT CONFIGURATION
The output of the ADPD2211 allows different configurations
depending on the application. The current gain of the ADPD2211
reduces the effect of surrounding interferers but, for best perfor-
mance, careful design and layout is still necessary to achieve the
best performance. The effect of capacitance on the output must
be considered carefully regardless of configuration as bandwidth
and response time of the system can be limited simply by the
time required to charge and discharge parasitics.
Because the ADPD2211 is effectively a current source, the
ADPD2211 output voltage drifts up to its compliance voltage,
approximately 1.2 V below VCC, when connected to an interface
that presents a high impedance. The rate of this drift is dependent
on the ADPD2211 output current, parasitic capacitance, and the
impedance of the load. This drift can require additional settling
time in circuits following the ADPD2211 if they are actively
multiplexing the output of the ADPD2211 or presenting a high
impedance due to power cycling. For multiplexed systems, a
current steering architecture may offer a performance advantage
over a break-before-make switch matrix.
3-WIRE CABLE VOLTAGE CONFIGURATION
The ADPD2211 can be used in a minimal 3-wire voltage
configuration, offering a compact solution with very few
components (see Figure 13). A shunt resistor (RS) sets the
transimpedance gain in front of the analog-to-digital converter
(ADC). This configuration allows flexibility in matching the
ADC converter full-scale input to the full-scale output of the
ADPD2211. The dynamic range of the interface is limited to
the compliance voltage of the ADPD2211.
No additional amplification is needed prior to the ADC. Response
time at the lower end of the range is limited by the ability of the
output current to charge the parasitic capacitance presented to
the output of the ADPD2211.
3-WIRE CURRENT MODE CONFIGURATION
When used in the 3-wire current mode configuration with a
photodiode (see Figure 14), the ADPD2211 is insensitive to load
resistance and can be used when the signal processing is further
from the sensor. EMI noise and shielding requirements are
minimized; however, cable capacitance has a direct effect on
bandwidth, making the 3-wire current mode configuration a
better choice for unshielded interfaces. The feedback capacitance
(CF) value must be chosen carefully to eliminate stability and
bandwidth degradation of the ADPD2211. Large capacitance
around the feedback loop of the TIA has a direct effect on the
bandwidth of the system.
Data Sheet ADPD2211
Rev. 0 | Page 11 of 13
Figure 13. ADPD2211 Used in 3-Wire Cable Voltage Configuration
Figure 14. ADPD2211 Used in 3-Wire Current Mode Configuration
ADPD2211
CURRENT
AMPLIFIER
+
–
ADC AND
MICROPROCESSOR
3.3V
3.3V
R
S
GND
OUT
VCC
13720-023
VCC
OUT
GND
3.3V
C
F
R
F
TIA
3.3V
ADPD2211
ADC AND
MICROPROCESSOR
0V TO V
CC
– 0.75V
CURRENT
AMPLIFIER
+
–
13720-024
ADPD2211 Data Sheet
Rev. 0 | Page 12 of 13
EVALUATION BOARD SCHEMATIC AND LAYOUT
Figure 17 shows the evaluation board schematic. Figure 15 and
Figure 16 show the evaluation board layout for the top and
bottom layers, respectively.
Figure 15. ADPD2211 Evaluation Board Top Layer
Figure 16. ADPD2211 Evaluation Board Bottom Layer
Figure 17. ADPD2211 Evaluation Board Schematic (Do Not Install C3A)
13720-027
13720-028
EVALZ-ADPD2211
U1A
1
3
4
6
8
PWDN
NIC
VCC
GND
NIC
2 7
NICVCC
PWDN GND
OUT
NIC
OUT
EPAD
R11A
100kΩ
R2A
100kΩ
C21A
1µF
C3A
0.01µF
DNI
DNI
C11A
0.01µF
5
13720-026
Data Sheet ADPD2211
Rev. 0 | Page 13 of 13
OUTLINE DIMENSIONS
Figure 18. 8-Lead Lead Frame Chip Scale Package [LFCSP]
3 mm × 3 mm Body and 0.65 mm Package Height
(CP-8-22)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Ordering Quantity
ADPD2211ACPZ-R7 −40°C to +85°C 8-Lead Lead Frame Chip Scale Package [LFCSP] CP-8-22 1500
ADPD2211ACPZ-RL
−40°C to +85°C
8-Lead Lead Frame Chip Scale Package [LFCSP]
CP-8-22
5000
EVALZ-ADPD2211 Evaluation Board
1 Z = RoHS Compliant Part.
TOP VIEW
SIDE VIEW
8
1
5
4
BOTTOM VIEW
SEATING
PLANE
0.70
0.65
0.60
1.60
1.50
1.40
2.40
2.30
2.20
0.203 REF
0.20 M IN
0.050 M AX
0.035 NO M
0.45 NO M
0.65
BSC
3.10
3.00 SQ
2.90
COPLANARITY
0.08
0.45
0.40
0.35
10-31-2013-A
PIN 1 INDEX
AREA
PKG-004134
0.35
0.30
0.25
0.225
0.175
0.125
EXPOSED
PAD
PIN 1
INDICATOR
FOR PRO P E R CONNECTI ON O F
THE EXPOSED PAD, REFER TO
THE PIN CO NFI GURAT IO N AND
FUNCTION DES CRIPTI ONS
SECTION OF THIS DATA SHEET.
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13720-0-4/16(0)
