Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ SO-8 Compatible with Heatsink RDS(ON) 1.9mΩ
▼ Low On-resistance ID170A
▼ RoHS Compliant
Description
□
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TC=25℃W
PD@TA=25℃W
EAS Single Pulse Avalanche Energy4mJ
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient325 ℃/W
Data & specifications subject to change without notice
A
P1R803GMT-HF
5
Halogen-Free Product
170
Pulsed Drain Current1300
Parameter Rating
Drain-Source Voltage 30
Thermal Data
Parameter
Gate-Source Voltage +20
Continuous Drain Current343
Continuous Drain Current (Chip)
Continuous Drain Current334
200903043
Total Power Dissipation 83.3
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Total Power Dissipation
28.8
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
SSSGPMPAK 5x6
D
D
D
D
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=30A - - 1.9 mΩ
VGS=4.5V, ID=20A - - 3.8 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 80 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=30A - 24 38 nC
Qgs Gate-Source Charge VDS=15V - 5.3 nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 13.5 nC
td(on) Turn-on Delay Time2VDS=15V - 11 - ns
trRise Time ID=30A - 97 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 30 - ns
tfFall Time RD=0.5Ω-95-ns
Ciss Input Capacitance VGS=0V - 2540 4060 pF
Coss Output Capacitance VDS=25V - 785 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=20A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V, - 45 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 53 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP1R803GMT-HF
2
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP1R803GMT-HF
0
40
80
120
160
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
6.0V
5.0V
VG=4.0V
0
100
200
300
0.0 1.0 2.0 3.0 4.0 5.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
6.0V
5.0V
VG=4.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=30A
VG=10V
0
10
20
30
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
1.2
1.6
2
2.4
2.8
3.2
3.6
4
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=20A
TC=25oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP1R803GMT-HF
1
10
100
1000
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0 102030405060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=30A
VDS =15V
VDS =18V
V DS =24V
0
800
1600
2400
3200
1 5 9 13 17 21 25 29
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
td(on) trtd(off) tf
VDS
VGS
10%
90%
