AP01N15GK-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower Gate Charge Fast Switching Characteristic Halogen Free & RoHS Compliant Product BVDSS 150V RDS(ON) 2.6 ID G 700mA S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. S D SOT-223 G The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 3 Continuous Drain Current , VGS @ 10V 3 Continuous Drain Current , VGS @ 10V 1 Rating Units 100 V +20 V 700 mA 550 mA 2.8 A 2.8 W IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 45 /W 1 201011021 AP01N15GK-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 150 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=500mA - - 2.6 VGS=4.5V, ID=300mA - - 2.8 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 VDS=10V, ID=500A - 1.4 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=1A - 3 4.8 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=120V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.7 - nC 2 td(on) Turn-on Delay Time VDS=75V - 7 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3 - 52 - ns tf Fall Time VGS=10V - 30 - ns Ciss Input Capacitance VGS=0V - 80 130 pF Coss Output Capacitance VDS=25V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Min. Typ. IS=2.1A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time Is=1A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 115 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP01N15GK-HF 2 1.6 o ID , Drain Current (A) 1.6 ID , Drain Current (A) o 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 150 C 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 25 C 1.2 0.8 1.2 0.8 0.4 0.4 0 0 0 4 8 12 0 16 4 8 12 16 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 2.4 I D =1mA I D =0.5A V G =10V 1.4 1.2 Normalized RDS(ON) Normalized BVDSS (V) 2.0 1 0.8 1.6 1.2 0.8 0.6 0.4 0.4 -50 0 50 100 150 -50 0 o 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 8 Normalized VGS(th) (V) I D =250uA IS(A) 6 T j =150 o C T j =25 o C 4 1.2 0.8 0.4 2 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP01N15GK-HF ID=1A V DS = 120 V 10 100 C iss 80 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 120 12 6 60 4 40 2 20 C oss C rss 0 0 0 1 2 3 1 4 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthja) Duty factor=0.5 ID (A) 100us Operation in this area limited by RDS(ON) 1 1ms 10ms 100ms 0.1 1s o T A =25 C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 120/W DC 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4