Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 150V
▼ Lower Gate Charge RDS(ON) 2.6Ω
▼ Fast Switching Characteristic ID700mA
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃mA
ID@TA=70℃mA
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-a Maximum Thermal Resistance, Junction-ambient345 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Total Power Dissipation 2.8
Continuous Drain Current3, VGS @ 10V 550
Pulsed Drain Current12.8
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 700
Parameter Rating
Drain-Source Voltage 100
AP01N15GK-HF
Halogen-Free Product
201011021
1
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
DS
G
SOT-223
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 150 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=500mA - - 2.6 Ω
VGS=4.5V, ID=300mA - - 2.8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=500A - 1.4 - S
IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=1A - 3 4.8 nC
Qgs Gate-Source Charge VDS=120V - 0.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.7 - nC
td(on) Turn-on Delay Time2VDS=75V - 7 - ns
trRise Time ID=1A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω-52-ns
tfFall Time VGS=10V - 30 - ns
Ciss Input Capacitance VGS=0V - 80 130 pF
Coss Output Capacitance VDS=25V - 17 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.1A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2Is=1A, VGS=0V, - 50 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 115 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP01N15GK-HF
2
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
A
P01N15GK-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
0.4
0.8
1.2
1.6
2
0481216
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
6.0V
5.0V
VG=4.0V
0
0.4
0.8
1.2
1.6
0 4 8 12 16
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
7.0V
6.0V
5.0V
VG=4.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=0.5A
VG=10V
0
2
4
6
8
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
I
D=250uA
I
D=1mA
AP01N15GK-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
01234
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =120V
ID=1A
Q
VG
10V
QGS QGD
QG
Charge
0
20
40
60
80
100
120
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 120℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
1s
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
