VSMY9854535
www.vishay.com Vishay Semiconductors
Rev. 1.0, 01-Jul-16 1Document Number: 84358
For technical questions, contact: emittertechsupport@vishay.com
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High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY9854535 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance SMD package with lens. A 35 mil
chip provides outstanding low forward voltage and allows
DC operation of the device up to 1.0 A.
FEATURES
• Package type: surface mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 45°
• Low forward voltage
• Designed for high drive currents: up to 1.0 A (DC) and up
to 5 A pulses
• Low thermal resistance: RthJP = 10 K/W
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Illumination for 3D gaming
• Machine vision
• Bio identification
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY9854535 370 ± 45 850 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY9854535 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF1A
Peak forward current tp/T = 0.5, tp = 100 μs IFM 2A
Surge forward current tp = 100 μs IFSM 5A
Power dissipation PV2.5 W
Junction temperature Tj115 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature According to Fig. 10, J-STD-20 Tsd 260 °C
Thermal resistance junction / pin JESD 51 RthJP 10 K/W