MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device | or E-line Device Type marking | equivalent | B.S. number* | Page Type marking | BS/CECC number | Page BFS36 u1 2N930 BS 9365 F014 13 BAW63 D1 BS 9302 F001* 15 BFS36A L2 2N929 BS9365 F013 13 BAW63A D2 BS9302 FO02* 15 BFS37 L3 2N2605 BS 9365 F026 13 BAW63B D3 BS 9302 FO03* 15 BFS37A L4 2N2604 BS 9365 F025 13 BAW64 D4 BS 9302 F004* 15 BFS38 c2 zve2 BS 9365 FOIE 13 BAW65 O05 BS 9302 FO05* 15 BFS38A c1 ZT80 BS 9365 F015 13 BAWE66 D6 BS 9302 FO06* 15 BFS39 C3 2783 BS9365 F017 13 BAW67 D7 BS 9302 F007* 15 BFS40 C5 ZT 182 BS 9365 F021 13 BAW68 D8 BS 9302 F008* 15 BFS40A c4 Z1180 BS 9365 F020 13 BZX88-C2V7 w4 15 BFS41 c6 ZT183 BS9365 F022 13 BZX88-C3V0 W5 15 BFS42 P1 Z2T93 BS 9365 F018 13 BZX88-C3V3 W6 15 BFS43 P2 ZT90 BS9365 F019 13 BZX88-C3V6 w7 15 BFS44 P3 ZT210 BS 9365 F023 13 BZX88-C3V9 ws 15 BFS45 P4 Z27T211 BS 9365 F024 13 BZX88-C4V3 ws 15 BFS46 H1 2N918 BS 9365 F047 14 BZx88-C4V7 21 15 BFS46A H2 ZTX321 BS 9365 F048 14 BZX88-C5V1 zZ2 15 BFT27 L5 2N2484 13 BZX88-C5V6 Z3 15 BSS47 L6 ZTX342 BS 9365 F027 13 BZX88-C6V2 Z4 15 BSS56 L7 ZTX341 13 BZX88-C6V8 Z5 15 BSV35 $2 2N2369 BS 9365 F037 14 BZX88-C7V5 Z6 15 BSV35A $1 2N708 BS 9365 F036 14 BZX88-C8V2 Zi 15 BSV36 $3 2N2475 BS 9365 F038 14 BZX88-C9V1 Z8 15 BSV37 $4 2N2894 BS 9365 F039 14 BZX88-C 10 zg 15 BZX88-C11 Y1 15 BZx88-C12 Y2 15 BZX88-C13 3 15 BZX88-C15 4 15 BZX88-C16 Y5 15 BZX88-C18 Y6 15 BZX88-C20 v7 15 BZX88-C22 Y8 15 BZX88-C24 Y9 15 BZX88-C27 x1 15 BZX88-C30 x2 16 BZX88-C33 x3 15 BZX88-C36 x4 15 BZX88-C39 X5 15 BZX88-C43 x6 15 BZX88-(C47 X7 15 *Category P. H14 NPN SWITCHING (continued Max Vceisat) hee f;Min [Switching Times Max at at at (Max) at Type Veeo] 'c Package} Comple- le | Ig | Min.]Max.} Ic le | ton | tote | Ic ment VimA}] V [mAI|mA mA|MHz|mA}] ns | ns |mA BFY51 30 {1000/0.35/150| 15 | 40} | 1501 50 | 50 | 55* |360*) 150) TO-39 2N2218 | 30 } 800/0.4 |150] 15 | 40/120 | 150/ 250 | 20 | 25* |175*) 150; TO-39 |2N2904 2N2219 | 30 | 800/0.4 |150] 15 | 100|300 | 150] 250 | 20 | 25* |200*) 150 | TO-39 |2N2905 2N2220 | 30 | 800/0.4 |150} 15] 20] 60 | 150] 250 | 20 | 20* j213*; 150 | TO-18 _ 2N2221 | 30 | 800/0.4 |150] 15) 40/120 | 150] 250 | 20 | 25* | 175*) 150] TO-18 |2N2906 2N2222 | 30 | 800/0.4 | 150] 15) 100/300 | 150) 250 | 20 | 25* | 200%) 150] TO-18 |2N2907 Z2T80 25 | 500]0.2 | 10 38/162 | 10} 200 } 10 | 50* |170*} 20] TO-18 |2T180 ZT87 25 | 500/0.2 | 10] 2} 75/250} 10] 200 | 10 | 50*/170*) 20] TO-18 |2Z7187 BFY52 20 /1000/0.35) 150) 15} 60] | 150] 50 | 50 | 55* }360*) 150] TO-39 2N706A | 20 | {0.6 | 10] 1] 20) | 10] 200] 10/40 | 75} 10] TO-18 _ 2N2477 } 20} |0.4 | 150}3.75) 40) | 150) 250 |} 50 | 25 | 45) 150) TO-39 _ 2N2476 | 20 | [0.4 |150/7.5 | 20) | 150] 250 | 50 | 25 | 45) 150} TO-39 _ 2N2369A| 15 | 50010.2 | 10} 1] 4120] 10) |} | 9 | 13} 10} TO-18 - 2N2368 | 15 | 500}0.24) 10} 1] 20! 60) 10; | j;12 | 15] 10; TO-18 _ 2N2369 | 15 | 500]0.24; 10}; 1] 40)120) 10] ~ | ]|12 1 18] 10) TO-18 BSY95A | 15 | 20010.35| 1010.2 | 50/200 | 10| 200 | 10 (note 3) TOQ-18 2N708 15 | j0.4 | 10} 1] 30/120 | 10; 300 | 10 (note 2) TO-18 _ 2N2938 | 13 | 500)0.4 | 50]/1.6 |} 30) 105*) 50) 500 | 10} 30 | 30] 50) TO-18 _ 2N2475 300/0.4 | 200.66 30/150 | 20; 600 | 20; 20 | 15) 20) TO-18 2N709 |0.3 3/0.15} 20/120 | 10] 600] 5] 15 15 10} TO-18 - *Typical Note 2 tyg = 25ns Note 3 tg =50ns 4 TO-18 TO-39 MC6 ELECTRICAL CHARACTERISTICS N.P.N. SWITCHING TRANSISTORS Vee} Vce| ton | tote | hre > Vectsat) fr | Cobo Dice T Min.| Min.] Max.) Max. . at le Vee |Max. atlc tg |Min. |Max. Geomet e tee TyPe 7 Tv | ns | ns | Min.[Max.| mA] V | V | mA] mA [MHz| pF " 2N2218A | 75 | 40] 35 | 285) 40] 120| 150} 10 |0.3 | 150} 15 | 250] 8 G5 2N2219A | 75 | 40 | 35 | 285] 100] 300} 150/ 10 |0.3 | 150] 15 | 300}; 8 G5 2N2221A | 75 | 40 | 35 | 285] 40] 120) 150/10 | 0.3 | 150] 15 | 250) 8 G5 2N2222A | 75 | 40 | 35 | 285] 100} 300/ 150] 10 |0.3 | 150 | 15 300 | 8 G5 2N2218 60 30 | 35] 285! 40] 120] 150] 10 |0.4 | 150] 15 | 250] 8 G5 2N2219 60 30 | 35 | 285] 100] 300] 150); 10 | 0.4 | 150] 15 | 250; 8 G5 2N2221 60 30 | 35 | 285| 40] 120] 150) 10 | 0.4 | 150] 15 | 250] 8 G5 2N2222 60 30 | 35 | 285] 100] 300] 150) 10 | 0.4 | 150] 15 ; 250/ 8 G5 2N2369 40 15 12 18| 40] 120 10 1 10.24] 10 1|500/] 4 G18 2N2369A | 40 15 12 18| 40} 120 10 1 |0.2 10 1/500] 4 G18 P.N.P. SWITCHING TRANSISTORS Vep| Vce| ton | tore | *< bre Vce(sat) fr | Cobo . Min.) Min.}| Max.) Max. at le Vee |Max. at!le Ig |Min. |Max. Dice Type - Geometry Vv Vv ns | ns | Min.|Max.} mA} V Ve} mA | mA |MHz] pF 2N2907A | 60 60 | 45 | 100] 100 | 300 | 150 | 10 0.4; 150; 15 | 200] 8 G7 2N2907 60 40 | 45; 100] 100 | 300 | 150 | 10 0.4 | 150] 15 | 200] 8 G7 2N2894 12 12 60 90 40 | 150 30 0.5] 0.5 | 100 | 10 | 400 6 G8 N.P.N. HIGH FREQUENCY TRANSISTORS Mee | Mare TE Give | winat 8" at vec | Min. | Ma ; in. in. at Ie at Vce in. a at Vce in. jax. Dice T ice Type FT. | ma | Vv | mw | MHz | v | GHz} ae | Seomety 2N918 30 15 20 3 1 30 500 10.0 0.6 6 G14 Veeisat), fr and Cop, are parameters which are assembly dependent and figures quoted are those typically achieved on Ferranti assembly lines. SD12