BUX85G SWITCHMODE NPN Silicon Power Transistors The BUX85G is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. http://onsemi.com Features * * * * * VCEO(sus) - 450 V VCES(sus) - 1000 V Fall time = 0.3 ms (typ) at IC = 1.0 A VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A These Devices are Pb-Free and are RoHS Compliant* 2.0 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS, 50 WATTS MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO(sus) 450 Vdc Collector-Emitter Voltage VCES 1000 Vdc Emitter-Base Voltage VEBO 5 Vdc - Continuous - Peak (Note 1) IC ICM 2 3.0 Adc - Continuous - Peak (Note 1) IB IBM 0.75 1.0 Adc Reverse Base Current - Peak IBM 1 Adc Total Device Dissipation @ TC = 25_C Derate above 25C PD 50 400 W W/_C TJ, Tstg -65 to +150 _C Collector Current Base Current Operating and Storage Junction Temperature Range TO-220AB CASE 221A-09 STYLE 1 1 2 3 MARKING DIAGRAM BUX85G AY WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristics RqJC 2.5 _C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds TL 275 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle x 10%. BUX85 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION Device Package Shipping BUX85G TO-220 (Pb-Free) 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 14 1 Publication Order Number: BUX85/D BUX85G IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 - - Vdc - - - - 0.2 1.5 OFF CHARACTERISTICS (Note 2) Collector-Emitter Sustaining Voltage (IC = 100 mAdc, (L = 25 mH) See Figure 1 Collector Cutoff Current (VCES = Rated Value) (VCES = Rated Value, TC = 125_C) ICES mAdc Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO - - 1 mAdc hFE 30 50 - - - - - - 0.8 1 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 Adc, VCE = 5 V) Collector-Emitter Saturation Voltage (IC = 0.3 Adc, IB = 30 mAdc) (IC = 1 Adc, IB = 200 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VBE(sat) - - 1.1 Vdc fT 4 - - MHz ton - 0.3 0.5 ms ts - 2 3.5 ms tf - 0.3 - ms tf - - 1.4 ms DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 1 0 Vdc, f = 1 MHz) SWITCHING CHARACTERISTICS Turn-on Time Storage Time Fall Time Fall Time VCC = 250 Vdc, IC = 1 A IB1 = 0.2 A, IB2 = 0.4 A See Figure 2 Same above cond. at TC = 95_C 2. Pulse Test: PW = 300 ms, Duty Cycle x2%. http://onsemi.com 2 BUX85G +6 V L 250 HOR OSCILLOSCOPE 250 IC (mA) 100 VERT ~ 30-60 Hz 4V 0 + 100 W MIN VCEOsust VCEO (V) 1W Figure 1. Test Circuit for VCEOsust tr 30 ns IBon 90 IB % 10 t IBoff WAVEFORM ICon 90 IC % 10 0 t tf ts ton +25 V BD139 680 mF 250 W 200 W 100 mF T 100 W T.U.T. VIM 30 W tm VI 100 W 50 W BD140 Figure 2. Switching Times/Test Circuit http://onsemi.com 3 680 mF VCC 250 V BUX85G PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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