BUX85G - ON Semiconductor - Datasheet.Live

October, 2011 − Rev. 14

1Publication Order Number:

BUX85/D

BUX85G

SWITCHMODE NPN Silicon

Power Transistors

The BUX85G is designed for high voltage, high speed power

switching applications like converters, inverters, switching regulators,

motor control systems.

Features

•VCEO(sus) − 450 V

•VCES(sus) − 1000 V

•Fall time = 0.3 ms (typ) at IC = 1.0 A

•VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO(sus) 450 Vdc

Collector−Emitter Voltage VCES 1000 Vdc

Emitter−Base Voltage VEBO 5 Vdc

Collector Current − Continuous

− Peak (Note 1)

ICM

3.0

Adc

Base Current − Continuous

− Peak (Note 1)

IBM

0.75

1.0

Adc

Reverse Base Current − Peak IBM 1 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25°C

PD50

400

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +150 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

TL275 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle x 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

2.0 AMPERES

POWER TRANSISTOR

NPN SILICON

450 VOLTS, 50 WATTS

TO−220AB

CASE 221A−09

STYLE 1

http://onsemi.com

MARKING DIAGRAM

BUX85G

AY WW

BUX85 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

BUX85G TO−220

(Pb−Free)

50 Units / Rail

BUX85G

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, (L = 25 mH) See Figure 1

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

450

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCES = Rated Value)

(VCES = Rated Value, TC = 125_C)

ÎÎÎÎ

ICES

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

0.2

1.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.1 Adc, VCE = 5 V)

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 0.3 Adc, IB = 30 mAdc)

(IC = 1 Adc, IB = 200 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

0.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

1.1

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 1 0 Vdc, f = 1 MHz)

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎ

Turn−on Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

VCC = 250 Vdc, IC = 1 A

IB1 = 0.2 A, IB2 = 0.4 A

See Figure 2

ÎÎÎÎ

ton

ÎÎÎÎ

−

ÎÎÎ

0.3

ÎÎÎÎ

0.5

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎ

3.5

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎ

−

ÎÎÎ

0.3

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Same above cond. at TC = 95_C

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

1.4

ÎÎÎ

2. Pulse Test: PW = 300 ms, Duty Cycle x2%.

BUX85G

http://onsemi.com

Figure 1. Test Circuit for VCEOsust

Figure 2. Switching Times/Test Circuit

30-60 Hz

~4 V +

+6 V

100 W1 W

VERT

HOR

OSCILLOSCOPE

250

100

(mA)

MIN VCEOsust

VCEO (V)

IB %

IC %

WAVEFORM

IBon

IBoff

ICon

ton

tr ≤ 30 ns

+25 V

VIM

VI100 W

BD140

100 W

200 W

680 mF

250 W

100 mFVCC

250 V

680 mF

T.U.T.

BD139

BUX85G

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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BUX85/D

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