SILICON NPN TRANSISTOR 2N2891SMD05 * V(BR)CEO = 80V (Min). * Hermetic Ceramic Surface Mount Package * Ideally Suited For Low Frequency Large Signal Applications (High Voltage). * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Peak Collector Current Base Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 100V 80V 5V 3A 5A 0.5A 0.8W 4.57mW/C 35W 200mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters Max. Units RJA Thermal Resistance, Junction To Ambient 218.75 C/W RJC Thermal Resistance, Junction To Case 5 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7965 Issue 2 Page 1 of 3 SILICON NPN TRANSISTOR 2N2891SMD05 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols Parameters Test Conditions IC = 10mA IB = 0 80 V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage IC = 0.1mA IE = 0 100 ICEO Collector Cut-Off Current VCE = 60V IB = 0 50 VCE = 60V VBE = -2V 0.1 TA = 150C 100 VCE = 90V VBE = -2V 100 VEB = 5V IC = 0 10 IC = 100mA VCE = 2V 35 IC = 1.0A VCE = 2V 50 IC = 2A VCE = 5V 40 IC = 1.0A IB = 100mA 0.5 IC = 2A IB = 200mA 0.75 IC = 1.0A IB = 100mA 1.2 IC = 2A IB = 200mA 1.3 IC = 50mA VCE = 10V (1) V(BR)CEO (1) ICEX hFE Emitter Cut-Off Current Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Typ Max. Units V Collector Cut-Off Current IEBO Min. A 150 V DYNAMIC CHARACTERISTICS hfe Small-Signal Current Gain fT Transition Frequency Cobo Output Capacitance ton Turn-On Time toff 50 350 f = 1.0KHz IC = 200mA VCE = 10V 30 MHz f = 20MHz VCB = 10V IE = 0 70 100 pF f = 1.0MHz Turn-Off Time IC = 1.0A VCC = 20V 0.3 IB1 = 50mA s IC = 1.0A VCC = 20V IB1 = 50mA IB2 = -50mA 1.5 Notes (1) Pulse Width 380us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7965 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR 2N2891SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 2 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) SMD05 (TO-276AA) Underside View Pad 1 - Base Pad 2 - Collector Pad 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7965 Issue 2 Page 3 of 3