SMAJ530 and SMAJ550 Vishay Semiconductors New Product Surface Mount TRANSZORB(R) Transient Voltage Suppressors DO-214AC (SMA) Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Steady State Power 1W Peak Pulse Power 300W Reverse Voltage 530,550V Mounting Pad Layout 0.060 MIN (1.52 MIN) 0.094 MAX (2.38 MAX) 0.177 (4.50) 0.157 (3.99) Dimensions in inches and (millimeters) 0.012 (0.305) 0.006 (0.152) 0.050 MIN (1.27 MIN) 0.090 (2.29) 0.078 (1.98) 0.220 REF (5.58) 0.060 (1.52) Mechanical Data 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002oz., 0.064g Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 20K/carton 61 - 1.8K per 7" plastic Reel (12mm tape), 36K/carton 5A - 7.5K per 13" plastic Reel (12mm tape), 75K/carton 0.194 (4.93) Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Protects power IC controllers such as TOPSwitch(R) * Glass passivated junction * High temperature soldering guaranteed: 250C/10 seconds at terminals * Excellent clamping capability * Available in unidirectional only Maximum Ratings and Thermal Characteristics TA = 25OC unless otherwise noted. Parameter SMAJ530 SMAJ550 HD SB Symbol Device marking code Steady state power dissipation(3) (1)(2)(5) Peak pulse power dissipation (Fig. 1) Unit PM(AV) 1.0 W PPPM Minimum 300 W Stand-off voltage VWM Typical thermal resistance junction-to-lead RJL 27 C/W Typical thermal resistance junction-to-ambient RJA 75 C/W TJ, TSTG -55 to +150 C Operating junction and storage temperature range Electrical Characteristics 477 495 V TA = 25OC unless otherwise noted. Minimum breakdown voltage at 100A V(BR) 530 550 V Max. clamping voltage at 400mA, 10/1000s-waveform Vc 760 V Maximum DC reverse leakage current at VWM ID 5.0 A 650 mVC 90 7.5 pF Typical temperature coefficient of V(BR) Typical capacitance (4) at 0V at 200V Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC per Fig. 2 (2) Mounted on 5.0mm2 copper pads to each terminal (3) Lead temperature at 75OC = TL Document Number 88391 23-Jan-02 CJ (4) Measured at 1MHZ (5) Peak pulse power waveform is 10/1000s. www.vishay.com 1 SMAJ530 and SMAJ550 Vishay Semiconductors Ratings and Characteristic Curves (T A = 25C unless otherwise noted) Fig. 2 - Pulse Derating Curve Fig. 1 - Peak Pulse Power Rating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM - Peak Pulse Power (kW) 100 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10 1 100 75 50 25 0 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms td - Pulse Width (sec.) 0 25 50 75 100 125 150 175 TA - Ambient Temperature (C) Fig. 3 - Pulse Waveform IPPM - Peak Pulse Current, % IRSM 150 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. Peak Value IPPM 100 Half Value - IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 t - Time (ms) Application Notes * Respect Thermal Resistance (PCB Layout) - as the temperature coefficient also contributes to the clamping voltage. * Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature. Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power. * Clamping voltage is influenced by internal resistance - design approximation is 7V per 100mA slope. * Keep temperature of TVS lower than TOPSwitch as a recommendation. * Maximum current is determined by the maximum TJ and can be higher than 300mA. Contact supplier for different clamping voltage / current arrangements. * Minimum breakdown voltage can be customized for other applications. Contact supplier. * TOPSwitch is a registered trademark of Power Integrations, Inc. www.vishay.com 2 Document Number 88391 23-Jan-02