MBRT300150 thru MBRT300200R Silicon Power Schottky Diode VRRM = 150 V - 200 V IF(AV) = 300 A Features * High Surge Capability * Types from 150 V to 200 V VRRM Three Tower Package * Isolation Type Package * Electrically Isolated Base Plate * Not ESD Sensitive Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT300150(R) MBRT300200(R) Unit Repetitive peak reverse voltage VRRM 150 200 V RMS reverse voltage VRMS 106 141 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 150 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions MBRT300150(R) MBRT300200(R) Unit Average forward current (per pkg) IF(AV) TC = 125 C 300 300 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 2000 2000 A Maximum instantaneous forward voltage (per leg) VF IFM = 150 A, Tj = 25 C 0.88 0.92 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 C Tj = 100 C Tj = 150 C 1 10 30 1 10 30 mA 0.40 0.40 C/W Parameter Thermal characteristics Thermal resistance, junctioncase (per leg) RJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRT300150 thru MBRT300200R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRT300150 thru MBRT300200R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MBRT300150R MBRT300200R MBRT300150 MBRT300200