2002. 9. 17 1/5
SEMICONDUCTOR
TECHNICAL DATA KTK596S
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 3
CONDENSER MICROPHONE APPLICATION.
FEATURES
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. SOURCE
2. DRAIN
3. GATE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDO -20 V
Gate Current IG10 mA
Drain Current ID1 mA
Drain Power Dissipation PD150 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage V(BR)GDO IG=-100 A-20 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=1 A--0.6 -1.5 V
Drain Current IDSS (Note) VDS=5V, VGS=0 150 - 320 A
Foward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz 0.4 1.2 - mS
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz - 3.5 - pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz - 0.65 - pF
Note : IDSS Classification Y(1) : 150~240, GR(2) : 210~320
I Rank
Type Name
Marking
Lot No.
F
DSS
2002. 9. 17 2/5
KTK596S
Revision No : 3
ELECTRICAL CHARACTERISTICS
(Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.)
SPECIFIED TEST CIRCUIT
Voltage gain.
Frequency Characteristic.
Distortion.
Reduced Voltage Characteristic.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Voltage Gain GVVin=10mV, f=1kHz --3.0 -dB
Reduced Voltage Characteristic GVV Vin=10mV, f=1kHz VCC=4.5V 1.5V --1.2 -4.0 dB
Frequency Characteristic GVF f=1kHz 110Hz - - -1.0 dB
Input Resistance Zin f=1kHz 25 - - M
Output Resistance ZOf=1kHz - - 700
Total Harmonic Distortion THD Vin=30mV, f=1kHz - 1.0 %
Output Noise Voltage VNO Vin=0, A curve - - -110 dB
CC
V =4.5V
V =1.5V
CC
15pF
VTVM
OSC
For Outpu
t
1kΩ
V
THD
A
B
33uF
Impedance
1kΩ
2002. 9. 17 3/5
KTK596S
Revision No : 3
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (µA)
D
0
DS
0
I - V
DDS
DRAIN CURRENT I (µA)
FORWARD TRANSFER ADMITTANCE
100
0.3
0.5
DSS
y - I
GATE-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (µA)
D
GS
21
V =0
GS
V =-0.1V
GS
V =-0.2V
GS
V =-0.3V
GS
V =-0.4V
GS
I =200µA
DSS
50
-0.7
0
-0.6
I =300µA
DSS
I =170µA
DSS
V =5V
DS
fs DSS
fs
y (mS)
200 300 400 500
1
3
f=1kHz
V =0V
GS
f=1MHz
V =0
GS
f=1MHz
V =0
GS
V =5V
DS
34 7658910
50
100
150
200
250
300
DRAIN-SOURCE VOLTAGE V (V)
INPUT CAPACITANCE C (pF)
iss
DS
1
C - V
iss DS
135 2010
3
5
10
-0.5 -0.4 -0.3 -0.2 0-0.1
100
150
200
250
300
350
I - V
GSD
DRAIN CURRENT I (µA)
CURRENT VOLTAGE V (V)
100
-0.1
-0.3
DSS
V - I
GS(off) DSS
GS(off)
200 300 400 500
-0.5
-1
I =1µA
D
V =5V
DS
DRAIN-SOURCE VOLTAGE V (V)
REVERSE TRANSFER CAPACITANCE C (pF)
rss
DS
0.3
0.5
C - V
rss DS
135 2010
1
3
2002. 9. 17 4/5
KTK596S
Revision No : 3
DRAIN CURRENT I (µA)
TOTAL HARMONIC DISTORTION THD (%)
100
0.3
0.5
DSS
THD - I DSS
200 300 400 500
1
5
3
DRAIN CURRENT I (µA)
OUTPUT RESISTANCE Z (Ω)
O
DSS
300
Z - I
ODSS
100 200 300 400 500
400
500
700
600
DRAIN CURRENT I (µA)
INPUT RESISTANCE Z (MΩ)
100
26
30
28
DSS
Z - I
IN DSS
IN
200 300 400 500
32
36
34
DRAIN CURRENT I (µA)
VOLTAGE GAIN G (dB)
100
-10
-8
DSS
G - I
VDSS
V
200 300 400 500
-6
-4
-2
0
2
V =10mV
in
R =1.0kΩ
f=1kHz
L
G : V =4.5V
I : V =5.0V
V
DSS DS
CC
V =10mV
in
f=1kHz
Z : V =4.5V
I : V =5.0V
IN
DSS DS
CC
V =10mV
in
f=1kHz
Z : V =4.5V
I : V =5.0V
O
DSS DS
CC
V =30mV
in
f=1kHz
THD : V =4.5V
I : V =5.0V
DSS DS
CC
DRAIN CURRENT I (µA)
REDUCED VOLTAGE CHARACTERISIC
G (dB)
100
DSS
G - I
VV DSS
VV
200 300 400 500
-6
-4
-2
0
2
V =10mV
in
f=1kHz
G : V =4.5V 1.5V
I : V =5.0V
VV
DSS DS
CC
DRAIN CURRENT I (µA)
OUTPUT NOISE VOLTAGE V (dB)
NO
DSS
-120
V - I
NO DSS
100 200 300 400 500
-118
-116
-112
-114 V =0, A curve
in
L
R =1.0kΩ
V : V =4.5V
I : V =5.0V
NO
DSS DS
CC
2002. 9. 17 5/5
KTK596S
Revision No : 3
f=1kHz
THD : V =4.5V
I : V =5.0V
DSS
I =170µA
DSS
I = 300µA
DSS
DS
CC
INPUT VOLTAGE V (mV)
TOTAL HARMONIC DISTORTION THD (%)
IN
THD - VIN
0.5
1
10
3
5
30
20040 80 120 1600
P - Ta
D
AMBIENT TEMPERATURE Ta ( C)
02550
D
0
DRAIN POWER DISSIPATION P (mW)
75 100 125 150 175
50
100
150
200
