RF PhotoMOS (AQV22N) Lower output capacitance and on resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). RF PhotoMOS (AQV22N) FEATURES 6.40.05 .252.002 3.90.2 .154.008 8.80.05 .346.002 1. PhotoMOS relay with high response speed, low leakage current and low On resistance 2. Low capacitance between output terminals ensures high response speed: The capacitance between output terminals is small, typically 10 pF. This enables for a fast operation speed of 200 s. 3. High sensitivity and low On resistance Maximum 0.1 A of load current can be controlled with input current of 5 mA. The On resistance is less than our conventional models. With no metallic contacts, the PhotoMOS relay has stable switching characteristics. 6.40.05 .252.002 3.60.2 .142.008 8.80.05 .346.002 mm inch 1 6 2 5 3 4 4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 30 pA even with the rated load voltage of 200 V (AQV227N). 5. Controls low-level analog signals PhotoMOS relay features extremely low closed-circuit offset voltages to enable control of small analog signals without distortion. 6. Low terminals electromotive force (approx. 1 V) TYPICAL APPLICATIONS * Measuring devices * Scanner, IC checker, Board tester TYPES Output rating* Type AC/DC type Part No. Through hole terminal Packing quantity Surface-mount terminal Tape and reel packing style Picked from the Picked from the 1/2/3-pin side 4/5/6-pin side Load voltage Load current 200 V 70 mA AQV227N AQV227NA AQV227NAX AQV227NAZ 400 V 50 mA AQV224N AQV224NA AQV224NAX AQV224NAZ Tube packing style Tube Tape and reel 1 tube contains 50 pcs. 1 batch contains 500 pcs. 1,000 pcs. *Indicate the peak AC and DC values. Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal. RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Item Input Output LED forward current LED reverse voltage Peak forward current Power dissipation Load voltage (peak AC) Continuous load current Type of Symbol connection IF VR IFP Pin VL A IL B C AQV227N(A) AQV224N(A) 50 mA 5V 1A 75 mW f = 100 Hz, Duty factor = 0.1% 200 V 0.07 A 0.08 A 0.10 A 400 V 0.05 A 0.06 A 0.08 A 0.21 A 0.15 A Peak load current Ipeak Power dissipation Total power dissipation I/O isolation voltage Pout PT Viso 360 mW 410 mW 1,500 V AC Operating Topr -40C to +85C -40F to +185F Storage Tstg -40C to +100C -40F to +212F Temperature limits Remarks All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. A connection: Peak AC, DC B, C connection: DC A connection: 100 ms (1 shot), VL = DC Non-condensing at low temperatures RF PhotoMOS (AQV22N) 2. Electrical characteristics (Ambient temperature: 25C 77F) Type of Symbol connection Item Typical Maximum Minimum Typical Typical Maximum LED operate current Input LED turn off current LED dropout voltage Typical Maximum Typical On resistance Maximum Typical Output Maximum Typical Output capacitance Transfer characteristics IFon -- IFoff -- VF -- Ron A Ron B Ron C Cout Maximum Typical Off state leakage current Maximum Typical Turn on time* Maximum Switching speed Typical Turn off time* Maximum Typical I/O capacitance Maximum Initial I/O isolation Minimum resistance AQV227N(A) AQV224N(A) 0.90 mA 3.0 mA 0.4 mA 0.85 mA 1.25 V (1.14 V at IF = 5 mA) 1.5 V 30 70 50 100 16 55 25 70 8 28 12.5 35 10 pF -- 15 pF 30 pA 90 pA Remarks IL = Max. IL = Max. IF = 50 mA IF = 5 mA IL = Max. Within 1 s on time IF = 5 mA IL = Max. Within 1 s on time IF = 5 mA IL = Max. Within 1 s on time IF = 0 VB = 0 f = 1 MHz IF = 0 VL = Max. ILeak -- Ton -- Toff -- 0.08 ms 0.2 ms IF = 5 mA IL = Max. Ciso -- 0.8 pF 1.5 pF f = 1 MHz VB = 0 Riso -- 1,000 M 500 V DC 10 nA 0.20 ms 0.5 ms IF = 5 mA IL = Max. Note: Recommendable LED forward current IF = 5mA. *Turn on/Turn off time Input 90% Output 10% Toff Ton REFERENCE DATA 1. Load current vs. ambient temperature characteristics Allowable ambient temperature: -40C to +85C -40F to +185F Type of connection: A 2. On resistance vs. ambient temperature characteristics Measured portion: between terminals 4 and 6; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 3. Turn on time vs. ambient temperature characteristics Sample: AQV227N, AQV224N; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 1.0 120 150 100 AQV227N 50 AQV224N 0 -40 -20 0 20 40 60 80 85100 Ambient temperature, C AQV224N 80 60 40 AQV227N 0.8 0.6 0.4 AQV227N AQV224N 0.2 20 0 Turn on time, ms Load current, mA On resistance, 100 -40 -20 0 20 40 60 80 85 Ambient temperature, C 0 -40 -20 All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. 0 20 40 60 8085 Ambient temperature, C RF PhotoMOS (AQV22N) 4. Turn off time vs. ambient temperature characteristics Sample: AQV227N, AQV224N; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 5. LED operate current vs. ambient temperature characteristics Sample: AQV227N, AQV224N; Load voltage: Max. (DC); Continuous load current: Max. (DC) 0.3 0.2 5 4 3 2 AQV227N 1 0.1 AQV224N AQV227N -40 -20 0 0 20 40 60 80 85 Ambient temperature, C 7. LED dropout voltage vs. ambient temperature characteristics -40 -20 -3 -2 1.1 1.0 0 -40 -20 AQV227N AQV224N 50 -50 2 3 4 Voltage, V -100 10 -150 10. Turn on time vs. LED forward current characteristics Sample: AQV227N, AQV224N; Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Sample: AQV227N, AQV224N; Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 0.8 0.6 0.18 0.14 AQV224N 0.10 AQV227N 0.4 0.06 AQV224N*AQV227N 0.2 0 10 0 20 30 40 50 60 LED forward current, mA 13. Isolation characteristics (50 impedance) Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F 0 10 20 30 40 50 60 LED forward current, mA Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F 6 Insertion loss, dB Isolation, dB 80 60 AQV224N 40 20 0 5 AQV224N 4 3 AQV227N 2 AQV227N 1 104 105 106 Frequency, HZ 107 0 200 300 Load voltage, V 104 105 106 Frequency, HZ 400 12 10 8 6 4 AQV227N 2 14. Insertion loss characteristics (50 impedance) 100 100 Measured portion: between terminals 4 and 6; Frequency: 1 MHz, 30 mVrms; Ambient temperature: 25C 77F Output capacitance, pF Turn on time, ms 1.0 AQV227N -12 12. Output capacitance vs. applied voltage characteristics 0.22 1.2 AQV224N 0 11. Turn off time vs. LED forward current characteristics 1.4 0 20 40 60 80 85 Ambient temperature, C 10-9 1 80 85 0 20 40 60 Ambient temperature, C AQV227N Sample: AQV227N, AQV224N; Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F -1 50mA 30mA 20mA 10mA 5mA -40 -20 Off state leakage current, A Current, mA LED dropout voltage, V -4 1.2 AQV224N 10-6 100 1.3 2 9. Off state leakage current 150 1.4 3 0 0 20 40 60 80 85 Ambient temperature, C Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F 1.5 4 1 AQV224N 8. Current vs. voltage characteristics of output at MOS portion Sample: All types; LED current: 5 to 50 mA Turn on time, ms LED turn off current, mA LED operate current, mA Turn off time, ms 0.4 0 Sample: AQV227N, AQV224N; Load voltage: Max. (DC); Continuous load current: Max. (DC) 5 0.5 0 6. LED turn off current vs. ambient temperature characteristics 107 All Rights Reserved (c) COPYRIGHT Matsushita Electric Works, Ltd. 0 AQV224N 0 20 40 60 80 100 Applied voltage, V